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Abstract: The purpose of this work is to investigate the influence of the spatial distribution of traps on the electrical characteristics of hafnium oxide films deposited by physical vapor deposition. Samples were Al gated metal-oxide-semiconductor capacitors with hafnium oxide films deposited on SiO2 layer thermally grown on Si. During capacitance–voltage measurements large hysteresis, up to 10V, are observed in all samples. It is shown that depending on the hafnium oxide deposition conditions, the spatial distribution of the traps responsible for the hysteresis can be either two dimensional (interface/border traps) or three dimensional (bulk traps). [Copyright &y& Elsevier]

Abstract: A process for the selective deposition of nanoparticles by a self-electric focusing effect is discussed. The negatively charged Nickel nanoparticles were fabricated by a DC magnetron sputtering system, and were deposited on a photoresist-patterned silicon substrate. Because of the different conductance between silicon and photoresist, the charges were accumulated on the photoresist as the nanoparticles were deposited, which caused a focusing electric field to drive the nanoparticles towards the silicon substrate. We have demonstrated that the self-focusing effect of the charged nanoparticles is responsible for increasing the density of nanoparticles in the lines patterned on silicon substrate by two orders of magnitude with respect to that on photoresist. The width of the silicon line and the width ratio between photoresist line and silicon line are the two most important parameters that will affect the self-focusing effect. [Copyright &y& Elsevier]