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In this work, we have studied the TMA/H2O (TMA = Al(CH3)3) atomic layer deposition (ALD) of Al2O3 on hydroxyl (OH) and thiol (SH) terminated semiconductor substrates. Total reflection x-ray fluorescence reveals a complex growth-per-cycle evolution during the early ALD reaction cycles. OH and SH terminated surfaces demonstrate growth inhibition from the second reaction cycle on. Theoretical calculations, based on density functional theory, are performed on cluster models to investigate the first TMA/H2O reaction cycle. Based on the theoretical results, we discuss possible mechanisms for the growth inhibition from the second reaction cycle on. In addition, our calculations show that AlCH3 groups are hydrolyzed by a H2O molecule adsorbed on a neighboring Al atom, independent of the type of backbonds (Si-O, Ge-O, or Ge-S) of AlCH3. The coordination of Al remains four-fold after the first TMA/H2O reaction cycle. [ABSTRACT FROM AUTHOR]

N3-functionalized monolayers on silicon wafer substrates are prepared via the controlled vapor-phase deposition of 11-azidoundecyltrimethoxysilanes at reduced pressure and elevated temperature. The quality of the layer is assessed using contact angle, attenuated total reflectance Fourier transform infrared spectroscopy (ATR–FTIR), and ellipsometry measurements. At 60 °C, longer deposition times are needed to achieve monolayers with similar N3 density compared to depositions at 145 °C. The monolayers formed via the vapor phase are denser compared to those formed via a solvent-based deposition process. ATR–FTIR measurements confirm the incorporation of azido-alkyl chains in the monolayer and the formation of siloxane bridges with the underlying oxide at both deposition temperatures. X-ray photon spectroscopy shows that the N3 group is oriented upward in the grafted layer. Finally, the density was determined using total reflection X-ray fluorescence after a click reaction with chlorohexyne and amounts to 2.5 × 1014 N3 groups/cm2. In summary, our results demonstrate the formation of a uniform and reproducible N3-containing monolayer on silicon wafers, hereby providing a functional coating that enables click reactions at the substrate. [ABSTRACT FROM AUTHOR]

Abstract: Further improving complementary metal oxide semiconductor (CMOS) performance beyond the 15nm generation likely requires the use of high mobility materials like Ge for pMOS devices. However, Ge pMOS devices made in relaxed Ge do not out-perform current state-of-the-art uni-axially strained Si pMOS devices. This explains the current interest in compressively strained Ge like bi-axially strained Ge grown on top of SiGe strain relaxed buffers. From a device integration point of view, the surface smoothness of the strained Ge layer is an important parameter, which has so far not widely been reported in literature, in contrast to other parameters like the material quality (crystallinity) and the threading dislocation density. In this paper we report the capability of chemical mechanical polishing (CMP) to reduce the surface roughness of the SiGe strain relaxed buffers and the post-CMP and pre-epi cleans, which are required to obtain contamination free SiGe surfaces and to enable nearly defect free strained Ge growth without re-occurrence of the surface roughening. We will demonstrate the epitaxial growth of fully strained 20–40nm-thick Ge epitaxially grown on top of SiGe strain relaxed buffers with 85% Ge with a surface roughness as low as 1.6Å (measured on areas of 10×10μm2). [Copyright &y& Elsevier]