1. Enhancement of H c2 and J c by carbon-based chemical doping
- Author
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Yeoh, W.K. and Dou, S.X.
- Subjects
- *
SUPERCONDUCTIVITY , *ELECTRIC currents , *MAGNETIC fields , *DISLOCATIONS in crystals - Abstract
Abstract: In the past 5 years, various kinds of doping of MgB2, including single elements (metal and non-metal), silicates, various carbon sources, and other compounds have been investigated and reported. Most nanoparticle doping leads to improvement of critical current density, J c(H), and performance, but some types show a negative effect. In this paper, the effect of carbon doping on J c and the upper critical field, H c2, of MgB2 is reviewed. Carbon substitution effects make two distinguishable contributions to the enhancement of J c field performance: increase of H c2 and improvement of flux pinning, both because carbon substitutes for boron in the MgB2 lattice. Among all the carbon sources so far, nano-SiC has been confirmed to be the most effective dopant to enhance the J c in magnetic fields and H c2. An irreversibility field, H irr, of 10T has been achieved with nano-SiC doping at 20K, exceeding H irr of NbTi at 4.2K. Besides that, H c2 of carbon alloyed MgB2 film has reached the value of 71T. The significant enhancement in J c(H) and H c2 via carbon substitution has provided great potential for practical applications of MgB2. The dual reaction model proposed by the authors’ group provides a comprehensive understanding of the mechanism of enhancement in J c and H c2 by chemical doping. Further improvement in self-field J c performance while maintaining the already achieved in-field performance remains as a major challenge in the development of MgB2. [Copyright &y& Elsevier]
- Published
- 2007
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