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Fluctuation-induced conductivity of Cu0.5Tl0.5Ba2Ca2Cu2M1O10− δ (M = Si, Sn, Ge) superconductors has been studied from the resistivity vs. temperature data. The logarithmic plots of excess conductivity (Δ σ) vs. reduced temperatures [ ε=( T− T)/ T] show two crossover temperatures with three exponents. A distinct crossover from two-dimensional to three-dimensional conductivity in accordance with the 2D, 3D Aslamazov–Larkin equations has been observed in all the samples. Another crossover from 2D to 0D fluctuations has also been witnessed. FIC data analysis has been found to be quite useful in explaining the superconducting properties of the samples. Si and Sn doped samples have shown almost similar characteristics, while in Ge doped sample diverse behavior is observed. [ABSTRACT FROM AUTHOR]

Abstract: Ab initio quantum chemical calculation on model clusters, Al14, Pb14, V16, Nb16, Sn14, In18 and Hg18, are presented to estimate the pairing potentials of superconductivity. The total energies of the clusters for the restricted Hartree–Fock (RHF) type and unrestricted Hartee–Fock (UHF) type singlet ground states and the triplet state are calculated by the hybrid DFT method of Gaussian G03 program. The energy differences between these states are correlated to the superconducting energy gap 2Δ. By a slight modification of the geometry of the clusters from their positions in the parent crystalline lattice, reasonable 2Δ values are obtained. We regard the UHF type singlet state (mixed singlet state, MS) as to represent the antiferromagnetic metallic state and it is the state for superconductivity. Comparing the calculated results with other metal clusters we propose a general rule for appearance of superconductivity in elementary metals. [Copyright &y& Elsevier]

Superconducting tunnel junctions show an excellent energy resolution in X-ray detection. A simple procedure is employed to give an overview of the detector characteristics regardless of superconductor materials such as Al, Sn and Nb. By introducing an empirical relationship between junction parameters, the detector characteristics of signal magnitude and energy resolution are reproduced to an acceptable degree. This method gives helpful suggestion for understanding detector performance, and also serves as a guide line for designing tunnel junctions. [ABSTRACT FROM PUBLISHER]

Pb2BiS2I3 (I), Sn2BiS2I3 (II), and Sn2BiSI5 (III) are prepared by solid state reaction of stoichiometric amounts of PbS and BiI3 for (I) (silica tube, 500 °C, 72 h; ≈90% yield) and from a 2:1:2:3.15 molar mixture of Sn, Bi, S, and I2 for mainly (II) and minor amounts of (III) (evacuated silica tubes, 500 °C, 24 h). [ABSTRACT FROM AUTHOR]

Polycrystalline BaCu2SnSexS4-x (x = 0, 1, 2, 3, 4) samples are prepared by solid state reaction of stoichiometric amounts of BaS, SnS, CuS, BaSe, SnSe, and CuSe (evacuated quartz tubes, 650 °C10-15 h). [ABSTRACT FROM AUTHOR]

Bulk Cu2Sn1-xInxSe3 (x = 0-0.2) samples are prepared by high-pressure combustion synthesis (HPCS) of stoichiometric amounts of the elements under 2 MPa Ar in a quartz tube. [ABSTRACT FROM AUTHOR]

Impedance measurements indicate high ionic conductivity of the layered compound K0.72Na0.24Sn0.76O2. [ABSTRACT FROM AUTHOR]

Single-phase orthorhombic SnSe nanoplates are fabricated in gram quantities by boiling a black precipitate formed by combining aqueous solutions of NaHSe and Na2SnO2 (2 h, 94% yield). [ABSTRACT FROM AUTHOR]

GeAs and Sn-doped GeAs are prepared from the elements (1373 K, 4-5 d) and characterized by powder XRD, SEM, 119Sn Moessbauer spectroscopy, transport measurements, and TB-LMTO-ASA calculations. [ABSTRACT FROM AUTHOR]

Bulk samples of Cu2Sn1-xInxS3 (x = 0-0.2) are prepared by mechanical alloying (450 rpm, 24 h) followed by spark plasma sintering in vacuum (873 K, 5 min). [ABSTRACT FROM AUTHOR]

With respect to absorber materials in solar cells, single-phase Cu2ZnSnS4 (CZTS) is prepared by intermittent high-energy ball milling of CuS, ZnS, and SnS in the atomic ratio 2:1:1 (400 rpm, 3 h). [ABSTRACT FROM AUTHOR]

Cu5Sn2Te7 is prepared by melting and annealing stoichiometric amounts of the elements (evacuated quartz tubes, 1. [ABSTRACT FROM AUTHOR]

Crystals of the title compound are prepared from mixtures of ZnF2, SnF4, Li3N, and LiF (W capsule, 600-1000 °C, 5.5-7.7 GPa). [ABSTRACT FROM AUTHOR]

Review: 189 refs. [ABSTRACT FROM AUTHOR]

A new, highly conductive, highly deformable, and dry-air-stable glass, 0.4LiI-0.6Li4SnS4 is prepared at 200 °C from a homogeneous MeOH solution of Li4SnS4 (obtained from stoichiometric mixtures of Li2S and SnS2 at 450 °C) and LiI. [ABSTRACT FROM AUTHOR]

A new phase of SnH4 with C2/m symmetry is predicted by first-principle calculations using the Vienne ab initio simulation package (VSAP code) at pressures <400 GPa. [ABSTRACT FROM AUTHOR]

First-principles calculations and structure prediction simulations for the SnHn (n = 0.33-8) series using the ELocR code reveals the presence of a new SnH8 crystal with space group I $\bar 4$m2 aside of the common SnH4 at 150-350 GPa. [ABSTRACT FROM AUTHOR]

The title compound is solvothermally synthesized from a solution of Sn, Se, and CuCl in a 1:1 mixture of N-aminoethylpiperazine and EtOH (autoclave, 200 °C, 6 d, 38% yield). [ABSTRACT FROM AUTHOR]

IrSn0.45Se1.55 (I), Ir2Sn3Se3 (II), and Ir2SnSe5 (III) are prepared by heating stoichiometric mixtures of the elements (silica tubes with 1-3 atm of Ar, 500 °C) followed by repeated annealing at 950 °C (I), 750 °C (II), or 780 °C (III). [ABSTRACT FROM AUTHOR]

Cu2CoSnS4 (CCTS) nanoparticles are prepared from a 1.85:1:1:12 molar mixture of Cu(OAc)2, CoCl2, SnCl2, and CS(NH)2 in EtOH which is ball milled prior to thermal decomposition (alumina crucible, 250-450 °C, 1-6 h). [ABSTRACT FROM AUTHOR]

Single-phase polycrystalline powders of Fe1-xSnxSb2Se4 (x = 0 and 0.13) are prepared by solid state reaction of the elements (evacuated quartz tubes, 773 K, 72 h) followed by annealing at 773 K for 5 d. [ABSTRACT FROM AUTHOR]

A high solubility limit of < 9 mol% for MnTe alloying in SnTe is demonstrated. [ABSTRACT FROM AUTHOR]

Cu2SnTe3 nanocrystals with a cubic structure are prepared by reacting stoichiometric amounts of Cu(acac)2 and Ph4Sn in presence of oleylamine (argon atmosphere, 130 °C, 30 min) followed by injection of a TeO2 solution in 1-dodecanethiol (210 °C, 90 min). [ABSTRACT FROM AUTHOR]

Polycrystalline Na2+xGa2+xSn4-x (x = -0.04-0.3) are prepared by first heating Na and Sn (BN crucible in steel container, 873 K, 2 h) before Ga is added to the cooled mixture and heated again (BN crucible, 1. [ABSTRACT FROM AUTHOR]

The title compounds are prepared by solid-state reaction of stoichiometric amounts of Na2CO3, SnO2, and Sb2O5 (1. [ABSTRACT FROM AUTHOR]

The thermoelectric performance of p-type SnTe is enhanced over a broad temperature range with a peak ZT (figure of merit) value of ≈1.4 at 923 K via In/Cd co-doping and CdS nanostructuring. [ABSTRACT FROM AUTHOR]

The zeolite-analog semiconductors (Hpip)24 [In28Se54(H2O)4] ·4H2O (I) and (Hpip)24 [In26Bi2Se54(H2O)2] ·4H2O (II) (pip: piperidine) are prepared by solvothermal reaction of a 4.5:1:0.3 molar mixture of Se, In, and Bi (in the case of Bi doping) in a mixed solvent of pip and H2O (170 °C, 7 d). [ABSTRACT FROM AUTHOR]

Li1-xSn2+xAs2 (0.2 < x < 0.4) phases are prepared by stoichiometric solid state reaction of the elements (evacuated silica tubes, 973 K, 2 h; cooling to 423 K over 30 h). [ABSTRACT FROM AUTHOR]

Cu2SnS3 (CTS) films are fabricated by spray pyrolysis of aqueous solutions of SnCl2 (0.01 M), (NH2)2CS (0.05 M), and CuCl2 (0.01-0.0225 M) at glass substrate temperatures of 325-400 °C. [ABSTRACT FROM AUTHOR]

Polycrystalline Cu2FeSnX4 (X: S, Se) thin films are prepared by chemical spray pyrolysis of a 2:1:1:10 molar solution of Cu(OAc)2, FeCl3, SnCl2, and CS(NH2)2 in DMSO/EtOH (1:1) on bare and Mo-coated soda lime glass substrates (450 °C) followed by annealing in S or Se vapors (500-520 °C, 25 min), which results in improved surface texture and crystallinity. [ABSTRACT FROM AUTHOR]

Compounds (IV), (V), and (VII) are solvothermally prepared and characterized by single crystal XRD and UV/VIS spectroscopy. [ABSTRACT FROM AUTHOR]

Ir2Sn3Se3 (IrSn1.5Se1.5) is prepared by high-temperature reaction of the elements (belt apparatus, 600 °C, 40 kbar, 1 h), microcrystalline powder and single crystals are obtained by solid state reaction of Ir and an excess of SnSe acting as reactive flux (1000 °C, 5 d; slow cooling). [ABSTRACT FROM AUTHOR]

Li2MnGeS4 (I) and Li2CoSnS4 (II) are prepared by solid state reaction of Mn (Co), Ge (Sn), S, and 20% excess Li2S (graphite crucible in evacuated silica tubes, 700 °C resp. [ABSTRACT FROM AUTHOR]

GeP and Sn-doped GeP are prepared by solid state reactions of the elements in either Bi or Sn metal flux (1223 K, 96 h). [ABSTRACT FROM AUTHOR]

The Sn1-xPbxBi2Te4 solid solution is characterized by XRD, Hall, Seebeck coefficient, electrical resistivity, thermal conductivity, and specific heat measurements. [ABSTRACT FROM AUTHOR]

Review: 56 refs. [ABSTRACT FROM AUTHOR]

Thin films of the new title intergrowth compound consisting of a bilayer of SnSe and TiSe2 trilayer are prepared by self-assembly from a precursor containing modulated layers of Sn-Se and Ti-Se, which is synthesized by deposition of elemental layers (annealing at 350 °C). [ABSTRACT FROM AUTHOR]

Polycrystalline Li2SnS3 is prepared by solid state reaction of stoichiometric amounts of Li2S, Sn, and S (graphite crucible in evacuated silica tube, 750 °C, 96 h). [ABSTRACT FROM AUTHOR]

Alloyed Ge/Sn graphane analogues are prepared by topochemical deintercalation of CaGe2-2xSn2x (x = 0-0.09) in conc. [ABSTRACT FROM AUTHOR]

La3GeSb0.31Se7 and La3SnFe0.61Se7 are prepared by solid state reaction of stoichiometric mixtures of the elements (evacuated silica tubes, 800 °C, 4 d). [ABSTRACT FROM AUTHOR]

The title compounds are characterized by synchrotron powder XRD, neutron powder diffraction, 57Fe and 119Sn Moessbauer spectroscopy, UV/VIS/NIR diffuse reflectance spectroscopy, and magnetic measurements. [ABSTRACT FROM AUTHOR]

Kesterite Cu2ZnSnS4 nanoparticles, wurtzite Cu2ZnSnS4 nanoparticles, as well as Cu2ZnSnS4 particles with a mixture of both structures are prepared by hot injection of the sulfur source into an oleylamine (OA) solution of Cu(OAc)2, ZnCl2, and SnCl4 using elemental sulfur, 1-dodecanethiol, and thioacetamide in OA as sulfur source, respectively (235 °C, 1 h). [ABSTRACT FROM AUTHOR]

Bulk single crystals of Cu2ZnSnS4 of kesterite structure with dimensions up to 1 x 1 x 0.5 mm are prepared from naturally abundant CuS, ZnS, and SnS in a molar ratio of 2:1:1 (evacuated quartz ampule, 700 °C, 24-240 h). [ABSTRACT FROM AUTHOR]

Precursor Cu2SnS3 (CTS) nanoparticles with zinc blende (ZB) and wurtzite (WZ) derived structure are prepared by dissolving CuCl2 and SnCl2 in oleylamine (180 °C, 30 min) followed by addition of different S sources (ZB-type: elemental S, 280 °C; WZ-type: 1-dodecanethiol, 230 °C, 2 h). [ABSTRACT FROM AUTHOR]

The title semiconductor with an indirect band gap of 0.45 eV is synthesized from a stoichiometric mixture of Tl, Sn, Sb2Se3, and Se (carbon-coated quartz tube, 530 °C, 10 h). [ABSTRACT FROM AUTHOR]

MeNH3MI3 (M: Pb, Sn) perovskites are recognized as promising photovoltaic materials. [ABSTRACT FROM AUTHOR]

(NH4) 4Sn2S6·3H2O (I) as a more environmentally friendly alternative to the hydrazinium analogue in solution processed advanced Sn(IV) sulfide based films for electronic devices. [ABSTRACT FROM AUTHOR]

Cu2SnSe3 nanoparticles are sonochemically synthesized under multibubble sonoluminescence conditions from mixtures of CuCl, SnCl2, and Se dissolved in a mixture of ethanolamine and ethylene glycol (ultrasound, 25 °C, 20 min, 78% yield). [ABSTRACT FROM AUTHOR]

AgSnmSbTem+2 (m = 2, 4, 10, 18) thermoelectric materials are prepared by mechanical alloying of the elements in a planetary ball mill followed by spark plasma sintering (50 MPa, 749 K, 5 min). [ABSTRACT FROM AUTHOR]

The title compounds are synthesized by solvothermal reaction of Ag, ZnCl2 or MnCl2, SnSe, Se, octandioic acid, and N2H4·H2O (autoclave, 190 °C, 3 d, 29 and 38% yield for the Zn- and Mn-containing compound, respectively). [ABSTRACT FROM AUTHOR]