1. Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice.
- Author
-
Li, Jiakai, Dehzangi, Arash, Brown, Gail, and Razeghi, Manijeh
- Subjects
- *
AVALANCHE photodiodes , *PHOTODETECTORS , *SUPERLATTICES , *MOLECULAR beam epitaxy , *QUANTUM wells - Abstract
In this work, a mid-wavelength infrared separate absorption and multiplication avalanche photodiode (SAM-APD) with 100% cut-off wavelength of ~ 5.0 µm at 200 K grown by molecular beam epitaxy was demonstrated. The InAsSb-based SAM-APD device was designed to have electron dominated avalanche mechanism via the band structure engineered multi-quantum well structure based on AlAsSb/GaSb H-structure superlattice and InAsSb material in the multiplication region. The device exhibits a maximum multiplication gain of 29 at 200 K under -14.7 bias voltage. The maximum multiplication gain value for the MWIR SAM-APD increases from 29 at 200 K to 121 at 150 K. The electron and hole impact ionization coefficients were derived and the large difference between their value was observed. The carrier ionization ratio for the MWIR SAM-APD device was calculated to be ~ 0.097 at 200 K. [ABSTRACT FROM AUTHOR]
- Published
- 2021
- Full Text
- View/download PDF