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Abstract: Incorporation of impurities into the semiconductors by high energy heavy ions is a non-equilibrium process, which can result in intriguing near surface or subsurface property changes depending upon the energy of the ion. Present work deals with the optical study of Ni ion irradiated Ge20Se80−xBix thin films samples. The thin film samples were deposited by the flash evaporation method at 10−5Torr and were characterized by XRD, XRF, EPMA and DSC. Irradiation was done on samples with a Ni ion beam of 75MeV energy. The optical spectra of the films were recorded and the optical band gap study was done both as a function of dose (5×1012 to 1014 ions/cm2) as well as composition of the samples. The optical band gap was found to decrease with increasing Bi content as well as with increasing dose. [Copyright &y& Elsevier]

Abstract: The effect of hydrogen absorption on the electrical resistance and activation energy of thin film was investigated. The samples were prepared by oblique deposition at different angles (, and ) simultaneously at a pressure of Torr at room temperature and thickness of thin film were measured using quartz crystal thickness monitor. It was found that the resistance and activation energy of thin films increases with the angle of deposition. The activation energy of films is found to be higher than films for the same deposition angle and also increases with angle of deposition. The activation energy of hydrogenated samples in lower temperature range is found to increase with hydrogen charging cycle but in higher temperature range activation energy of hydrogenated samples is found to decrease due to discharge of hydrogen. [Copyright &y& Elsevier]