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This study presents theoretical and experimental investigations into the electron and hole color centers in BaFBr crystals, characterizing their electronic and optical properties. Stoichiometric BaFBr crystals grown by the Steber method were used in the experiments. Radiation defects in BaFBr crystals were created by irradiation with 147 MeV 84Kr ions with up to fluences of 1010–1014 ions/cm2. The formation of electron color centers (F(F−), F2(F−), F2(Br−)) and hole aggregates was experimentally established by optical absorption spectroscopy. Performed measurements are compared with theoretical calculations. It allows us to determine the electron transition mechanisms and investigate the processes involved in photoluminescence emission in Eu-doped BaFBr materials to enhance the understanding of the fundamental electronic structure and properties of electron and hole color centers formed in BaFBr crystals. [ABSTRACT FROM AUTHOR]

Today, BaFBr crystals activated by europium ions are used as detectors that store absorbed energy in metastable centers. In these materials, the image created by X-ray irradiation remains stable in the dark for long periods at room temperature. As a result, memory image plates are created, and they are extended to other types of ionizing radiation as well. Despite significant progress towards X-ray storage and readout of information, the mechanisms of these processes have not been fully identified to date, which has hindered the efficiency of this class of phosphors. In this study, using photoluminescence (PL), optical absorption (OA), Raman spectroscopy (RS), and atomic force microscopy (AFM), the luminescence of oxygen vacancy defects to BaFBr crystals irradiated with 147 MeV 84Kr and 24.5 MeV 14N ions at 300 K to fluences (1010–1014) ion/cm2 was investigated. BaFBr crystals were grown by the Shteber method on a special device. Energy-dispersive X-ray spectroscopy (EDX) analysis revealed the presence of Ba, Br, F, and O. The effect of oxygen impurities present in the studied crystals was considered. The analysis of the complex PL band, depending on the fluence and type of ions, showed the formation of three types of oxygen vacancy defects. Macrodefects (tracks) and aggregates significantly influence the luminescence of oxygen vacancy defects. The creation of hillocks and tracks in BaFBr crystals irradiated with 147 MeV 84Kr ions is shown for the first time. Raman spectra analysis confirmed that BaFBr crystals were amorphized by 147 MeV 84Kr ions due to track overlap, in contrast to samples irradiated with 24.5 MeV 14N ions. Raman and absorption spectra demonstrated the formation of hole and electron aggregate centers upon swift heavy ions irradiation. [ABSTRACT FROM AUTHOR]

A synthetic single crystal of magnesium-aluminate spinel was irradiated perpendicularly to the (111) plane with swift heavy xenon ions with an energy of 220 MeV. The modified layer was attested based on Raman scattering spectra recorded while focusing on the surface. A decrease in surface crystallinity was observed, reflected in the changes in fundamental optical characteristics such as the band gap and the energies of static and dynamic disorder. In this study, we demonstrate, along with the modification of optical characteristics and the formation of a disordered layer, the creation of new optically active centers. The luminescent properties of these centers were analyzed. The effect of temperature flare-up in the 3.4 eV band of the excitation spectrum was determined. The low sensitivity of Cr3+ luminescence to SHI is demonstrated. [ABSTRACT FROM AUTHOR]

In In this study, the optical properties of magnesium-aluminate spinel were examined after being irradiated with 220 MeV Xe ions. The research aimed to simulate the impact of nuclear fuel fission fragments on the material. The following measurements were taken during the experiments: transmission spectra in the IR region (190–7000) nm, optical absorption spectra in the range (1.2–6.5) eV, and Raman spectra were measured along the depth of ion penetration from the surface to 30 µm. A peak with a broad shape at approximately 5.3 eV can be observed in the optical absorption spectrum of irradiated spinel crystals. This band is linked to the electronic color centers of F+ and F. Meanwhile, the band with a maximum at ~(3–4) eV is attributed to hole color centers. Apart from the typical Raman modes of an unirradiated crystal, additional modes, A1g* (720 cm−1), and Eg* (385 cm−1), manifested mainly as an asymmetric shoulder of the main Eg mode, are also observed. In addition, the Raman spectroscopy method showed that the greatest disordering of crystallinity occurs in the near-surface layer up to 4 μm thick. At the same time, Raman scattering spectroscopy is sensitive to structural changes almost up to the simulated value of the modified layer, which is an excellent express method for certifying the structural properties of crystals modified by swift heavy ions. [ABSTRACT FROM AUTHOR]

In this work, using photoluminescence (PL), optical absorption (OA), Raman spectroscopy (RS), and atomic force microscopy (AFM), the radiation damage of BaFBr crystals irradiated with 147 MeV 84Kr ions to fluences (1010–1014) cm2 was investigated. The manifestations of the oxygen impurity contained in the studied crystals on the effects associated with ion irradiation are also considered. In unirradiated crystals, the PL spectra exhibited bands related to the oxygen impurity. Moreover, it was found that quenching and a shift of the PL maximum occur, which is due to the fact that, with increasing dose, aggregation of defects occurs. Electronic and hole aggregate color centers appear mainly in the bromide sublattice. A detailed study of the Raman spectra and comparison with the corresponding data for KBr single crystals made it possible to reveal the corresponding manifestations of the Raman modes of complex Br 3 − -type hole centers. [ABSTRACT FROM AUTHOR]

At present, silicon nitride is the only nitride ceramic in which latent ion tracks resulting from swift heavy ion irradiation have been observed. Data related to the effects of SHIs on the nanocrystalline form of Si3N4 are sparse. The size of grains is known to play a role in the formation of latent ion tracks and other defects that result from SHI irradiation. In this investigation, the effects of irradiation with high-energy heavy ions on nanocrystalline silicon nitride is studied, using transmission electron microscopy techniques. The results suggest that threshold electronic stopping power, Set, lies within the range 12.3 ± 0.8 keV/nm to 15.2 ± 1.0 keV/nm, based on measurements of track radii. We compared the results to findings for polycrystalline Si3N4 irradiated under similar conditions. Our findings suggest that the radiation stability of silicon nitride is independent of grain size. [ABSTRACT FROM AUTHOR]

Herein, the optical absorption, X‐ray diffraction (XRD) analysis data, and mechanical properties along the ion path are analyzed for gadolinium gallium garnet (Gd3Ga5O12 or GGG) single crystals irradiated with fast 84Kr ions to fluences of 1013–1014 ion cm−2. It is found that the optical absorption spectra of Czochralski‐grown unirradiated GGG crystal consist of relatively narrow lines in the UV spectral range associated with the 4f–4f transitions in Gd3+ ions. Transitions from the 6S7/2 ground state to the 6P, 6J, and 6D states in the Gd3+ cation are visible. An additional absorption band is also observed at 350 nm, which is associated with an uncontrolled Ca impurity. In irradiated GGG single crystals, a shift of the fundamental absorption edge by ≈30 nm to the long‐wavelength part of the spectrum is observed. The observed changes are caused by structural disturbances caused by depletion of the surface layer and an increase in the number of displaced atoms accompanied by an increase in the crystal lattice parameter. XRD analysis shows the presence of size effects and deformation of interplanar distances due to the displacement of atoms from the sites of the crystal lattice with subsequent migration. Hardness measurements show ion‐induced softening, which may be due to ion‐induced amorphization. [ABSTRACT FROM AUTHOR]

A depth-resolved Raman spectroscopy technique was used to study the residual stress profiles in polycrystalline silicon nitride that was irradiated with Xe (167 MeV, 1 × 1011 cm−2 ÷ 4.87 × 1013 cm−2) and Bi (710 MeV, 1 × 1011 cm−2 ÷ 1 × 1013 cm−2) ions. It was shown that both the compressive and tensile stress fields were formed in the irradiated specimen, separated by a buffer zone that was located at a depth that coincided with the thickness of layer, amorphized due to multiple overlapping track regions. The compressive stresses were registered in a subsurface region, while at a greater depth, the tensile stresses were recorded and their levels reached the maximum value at the end of ion range. The size of the amorphous layer was evaluated from the dose dependence of the full width at half maximum (FWHM) (FWHM of the dominant 204 cm−1 line in the Raman spectra and scanning electron microscopy. [ABSTRACT FROM AUTHOR]