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Recent advancements in the silicon carbide (SiC) power semiconductor technology offer improvements for high-power converters, where today silicon (Si) devices are still dominant. Bipolar SiC devices feature particularly good conduction capability while blocking high voltages. With expected advances in SiC material quality and processing technology, resulting in higher charge carrier lifetimes, methods for tailoring will be required. In this article, three differently optimized 10-kV SiC p-i-n diodes are compared regarding their switching and conduction performance in a 50-kHz LCC converter with a high output voltage. The converter topology features capacitively assisted switching, resulting in reduced switching losses for diodes with short reverse recovery tails. One diode group was subjected to a novel carrier lifetime tailoring method, involving simultaneous annihilation and generation of carbon vacancies. Another group was tailored via proton irradiation. Tradeoffs for the optimization of the diodes are highlighted. The analysis is supported by circuit simulations, device simulations, static measurements, switching waveform measurements, and calorimetric loss measurements. The results show a total rectifier loss reduction of 37%, compared to a state-of-the-art implementation with eight 1-kV Si diodes. The switching losses account for 3%–19% of the total losses, indicating a much higher possible operation frequency. [ABSTRACT FROM AUTHOR]

Enhanced active resonant (EAR) dc circuit breakers (DCCBs) are a novel type of DCCB that use a discharge closing switch as interruption medium. A technical limitation of discharge closing switches is the minimum voltage across the main gap required for successful triggering. A novel commutation process creating the minimum voltage internally is proposed, which allows to simplify the EAR DCCB configuration and to reduce its component count. In the prototype, the discharge closing switch is implemented with a TVG. Experiments show that the TVG can be triggered reliably down to a voltage of 50  $\mathrm{V}$ and that the discharge in the TVG is highly oscillatory at low current. The originally proposed EAR DCCB configuration has to be tuned such that the commutation to the TVG succeeds at low current. Conversely, the novel commutation process decouples the minimum voltage from the current level by adjusting the triggering delay. This allows reliable commutation irrespective of the operating conditions. It is shown that the novel commutation process does not adversely affect dc interruption. Proactive commutation operation and auto-reclosing strategies are demonstrated. [ABSTRACT FROM AUTHOR]

Wireless control of modular multilevel converter (MMC) submodules offers several potential benefits to exploit, such as decreased converter costs and ease in converter installation. However, wireless control comes with several challenging engineering requirements. The control methods used with wired communication networks are not directly applicable to the wireless control due to the latency and reliability differences of wired and wireless networks. This article reviews the existing control architectures of MMCs and proposes a control and communication method for wireless submodule control. Also, a synchronization method for pulsewidth modulation carriers is proposed suitable for wireless control. The imperfections of wireless communication, such as higher latency and packet losses compared to wired communication, are analyzed for the operation of MMCs. The latency is fixed with a proper controller and wireless network design. The converter is rendered immune to the packet losses by decreasing the closed-loop control bandwidth. The functionality of the proposal is verified, for the first time, experimentally on a laboratory-scale MMC using a simple wireless network. It is shown that wireless control of MMC submodules with the proposed approach can perform comparably to the wired control. [ABSTRACT FROM AUTHOR]

Direct current circuit breakers (DCCBs) have become a large research topic and are considered one of the critical components for future DC grids. Proposed DCCB concepts may be grouped into hybrid DCCBs and active resonant DCCBs. In this work, the enhanced active resonant (EAR) DCCB family is introduced. EAR DCCBs combine elements of hybrid and active resonant DCCBs. The EAR DCCB family consists of one unidirectional and six bidirectional concepts. All concepts feature proactive commutation. The main characteristic of the EAR DCCBs is that discharge closing switches are used instead of semiconductors with turn-off capability. Relevant discharge closing switch technology is reviewed, a laboratory prototype is explained, and experimental results are presented to demonstrate the feasibility of the proposed DCCB concepts. [ABSTRACT FROM AUTHOR]

This article studies a new hybrid converter that utilizes thyristors and full-bridge (FB) arms for achieving high-power capability with reduced semiconductor power rating compared to the FB modular multilevel converter. The study covers the theoretical analysis of the energy balancing, the dimensioning principles, the maximum power capability, and the limitations imposed by the discontinuous operation of the converter. Based on the analysis of these aspects, the theoretical analysis is concluded by identifying the operational constraints that need to be fulfilled for maximizing the power capability of the converter. It is concluded that the maximum power capability can be achieved for a certain range of modulation indices and is limited by both the commutation time of the thyristors and the power angle. Moreover, the P–Q capability of the hybrid converter is presented and discussed. Finally, simulation and experimental results that confirm the theoretical analysis and the feasibility of the studied converter are presented and discussed. [ABSTRACT FROM AUTHOR]

Future meshed high-voltage direct current grids require modular multilevel converters with extended functionality. One of the most interesting new submodule topologies is the semi-full-bridge because it enables efficient handling of dc-side short circuits while having reduced power losses compared to an implementation with full-bridge submodules. However, the semi-full-bridge submodule requires the parallel connection of capacitors during normal operation, which can cause a high redistribution current in case the voltages of the two submodule capacitors are not equal. The maximum voltage difference and resulting redistribution current have been studied analytically by means of simulations and in a full-scale standalone submodule laboratory setup. The most critical parameter is the capacitance mismatch between the two capacitors. The experimental results from the full-scale prototype show that the redistribution current peaks at 500 A if the voltage difference is 10 V before paralleling and increases to 2500 A if the difference is 40 V. However, neglecting very unlikely cases, the maximum voltage difference predicted by simulations is not higher than 20–30 V for the considered case. Among other measures, a balancing controller is proposed, which reduces the voltage difference safely if a certain maximum value is surpassed. The operating principle of the controller is described in detail and verified experimentally on a down-scaled submodule within a modular multilevel converter prototype. It can be concluded that excessively high redistribution currents can be prevented. Consequently, they are no obstacle for using the semi-full-bridge submodule in future HVdc converters. [ABSTRACT FROM AUTHOR]

In this paper, a novel $dv/dt$ filter is presented targeted for 100-kW to 1-MW voltage source converters using silicon carbide (SiC) power devices. This concept uses the stray inductance between the power device and the converter output as a filter component in combination with an additional small RC-link. Hence, a lossy, bulky, and costly filter inductor is avoided and the resulting output $dv/dt$ is limited to 5–10 kV/$\mu$s independent of the output current and switching speed of the SiC devices. As a consequence, loads with $dv/dt$ constraints, e.g., motor drives can be fed from SiC devices enabling full utilization of their high switching speed. Moreover, a filter-model is proposed for the selection of filter component values for a certain $dv/dt$ requirement. Finally, results are shown using a 300-A 1700-V SiC metal–oxide–semiconductor field-effect transistor (mosfet). These results show that the converter output $dv/dt$ can be limited to 7.5 kV/ $\mu$s even though values up to 47 kV/ $\mu$s were measured across the SiC mosfet module. Hence, the total switching losses, including the filter losses, are verified to be three times lower compared to when the mosfet $dv/dt$ was slowed down by adjusting the gate driver. [ABSTRACT FROM AUTHOR]

This paper presents the design process of a 312-kVA three-phase silicon carbide inverter using ten parallel-connected metal–oxide–semiconductor field-effect-transistor power modules in each phase leg. The design processes of the gate-drive circuits with short-circuit protection and power circuit layout are also presented. Measurements in order to evaluate the performance of the gate-drive circuits have been performed using a double-pulse setup. Moreover, electrical and thermal measurements in order to evaluate the transient performance and steady-state operation of the parallel-connected power modules are shown. Experimental results showing proper steady-state operation of the power converter are also presented. Taking into account measured data, an efficiency of approximately 99.3% at the rated power has been measured for the inverter. [ABSTRACT FROM PUBLISHER]

A high-voltage tapped-inductor buck converter utilizing a novel autonomous high-voltage valve is presented in this paper. Its application as auxiliary power supply for high-power cascaded-converter submodules is discussed, followed by a presentation of the most challenging problems in designing a low-power high-voltage step-down converter. The TI-buck converter topology is analyzed, which together with the novel autonomous high-voltage valve overcomes most of the problems. Analytical expressions describing the operation as well as circuit simulations are presented. Finally, an experimental evaluation of a 3-kV 70-W prototype converter utilizing the proposed autonomous high-voltage valve with series-connected super-junction MOSFETs is presented. [ABSTRACT FROM PUBLISHER]

Many publications have been presented on the modulation and control of the modular multilevel converter, some of which are based on phase-shifted carrier modulation. This paper presents an analysis of how the switching frequency affects the capacitor voltages, circulating currents, and alternating voltages using phase-shifted carrier modulation. It is found that switching frequencies that are integer multiples of the fundamental frequency should be avoided as they can cause the capacitor voltages to diverge. Suitable switching frequencies are derived for which the arm and line quantities will be periodic with symmetric operating conditions in the upper and lower arms. Thus, the practical outcome of this paper is a detailed description of how the switching frequency should be chosen in order to achieve advantageous operating conditions. The theoretical results from the analysis are validated by both simulations and experimental results. [ABSTRACT FROM AUTHOR]

Modular multilevel converters (M2Cs) are increasingly used in high-voltage direct current (HVDC) systems. The efficiency of M2Cs is influenced by the modulation and cell selecting methods, which determines the switching frequency and capacitor voltage ripple in the converter station. A new approach to modulation of the M2C is presented in this paper. Tolerance band methods are employed to obtain the switching instants, and also cell selection. The proposed methods overcome the modulation problem for converters with few cells on one hand and also reduce the sorting efforts for cell balancing purposes of many cells converter on the other hand. Three different algorithms are also proposed to balance the cell capacitor voltages. The evaluation is done in time-domain simulation by which the performance of each method is studied in both the steady-state and transient cases. It is observed that using tolerance band methods not only reduces the switching frequency but also allows for handling severe fault cases in a grid-connected system. Eventually, the most promising tolerance band method has been implemented and verified in a real-time digital simulator, RTDS®. The average switching frequency of 70 Hz has been achieved for the system under study, while the capacitor voltage ripple is limited to 10% of the nominal cell voltage. [ABSTRACT FROM AUTHOR]

This paper describes issues related to parallel connection of SiC bipolar junction transistors (BJTs) in discrete packages. The devices are applied in a high-frequency dc/dc boost converter where the switching losses significantly exceed the conduction losses. The design and construction of the converter is discussed with special emphasis on successful parallel-operation of the discrete BJTs. All considerations are experimentally illustrated by a 6-kW, 250-kHz boost converter (300 V/600 V). A special solution for the base-drive unit, based on the dual-source driver concept, is also shown in this paper. The performance of this driver and the current sharing of the BJTs are both presented. The power losses and thermal performance of the parallel-connected transistors have been determined experimentally for different powers and switching frequencies. An efficiency of 98.23% (±0.02%) was measured using a calorimetric setup, while the maximum temperature difference among the four devices is 12 °C. [ABSTRACT FROM AUTHOR]

The paper presents an inductor with reduced self-capacitance, designed and evaluated with fast-switching SiC transistors in dc-dc converters. A conventional inductor with the same core and number of turns was also build for comparison. The two inductors are tested experimentally on two different 2 kW, 100 kHz dc-dc converters with silicon carbide switches-one with a junction field-effect transistor (JFET) and the other with a bipolar junction transistor (BJT). Replacing the conventional inductor with the one that has lower self-capacitance improved the switching performance of the converter and reduced its electromagnetic emissions. Furthermore, the efficiency of the converter is improved-in the case of the JFET boost converter the power losses were reduced by 16% and by 20% in the case of BJT. [ABSTRACT FROM AUTHOR]

Silicon Carbide high-power modules populated with several parallel-connected junction field-effect transistors must be driven properly. Parasitic elements could act as drawbacks in order to achieve fast and oscillation-free switching performance, which are the main goals. These two requirements are related closely to the design of the gate-drive unit, and they must be kept under certain limits when high efficiencies are targeted. This paper deeply investigates several versions of gate-drive units and proposes a dual-function gate-drive unit which is able to switch the module with an acceptable speed without letting the current suffer from significant oscillations. It is experimentally shown that turn-on and turn-off switching times of approximately 130 and 185 ns respectively can be reached, while the magnitude of the current oscillations is kept at an adequate level. Moreover, using the proposed gate driver an efficiency of approximately 99.7% is expected for a three-phase converter rated at 125 kVA and having a switching frequency of 2 kHz. [ABSTRACT FROM AUTHOR]

Silicon carbide (SiC) bipolar junction transistors (BJTs) require a continuous base current in the on-state. This base current is usually made constant and is corresponding to the maximum collector current and maximum junction temperature that is foreseen in a certain application. In this paper, a discretized proportional base driver is proposed which will reduce, for the right application, the steady-state power consumption of the base driver. The operation of the proposed base driver has been verified experimentally, driving a 1200-V/40-A SiC BJT in a dc-dc boost converter. In order to determine the potential reduction of the power consumption of the base driver, a case with a dc-dc converter in an ideal electric vehicle driving the new European drive cycle has been investigated. It is found that the steady-state power consumption of the base driver can be reduced by approximately 60%. The total reduction of the driver consumption is 3459 J during the drive cycle, which is slightly more than the total on-state losses for the SiC BJTs used in the converter. [ABSTRACT FROM AUTHOR]