1. Electro-Thermal Confinement Enables Improved Superlattice Phase Change Memory.
- Author
-
Khan, Asir Intisar, Kwon, Heungdong, Chen, Michelle E., Asheghi, Mehdi, Wong, H.-S. Philip, Goodson, Kenneth E., and Pop, Eric
- Subjects
PHASE change memory ,PHASE change materials - Abstract
Large switching current density and resistance drift remain challenges for phase change memory (PCM) in data storage and neuromorphic computing applications. Here, we address these by electro-thermal and structural confinement in a GeTe/Sb2Te3 superlattice PCM (SL-PCM) with thermally-induced phase change, while observing scalability with bottom electrode diameter. We demonstrate ~ $\text{8-10}\times $ reduction of reset current density $({J}_{\text {reset}})$ and ~ $\text{25-30}\times $ reduction of power $({P}_{\text {reset}})$ in our mushroom cell SL-PCM compared to control Ge2Sb2Te5 (GST) PCM with the same device structure. The SL-PCM devices also exhibit multi-level states with $\sim 10\times $ lower resistance drift compared to control GST PCM. Material characterization and electro-thermal simulations confirm the role of heat confinement in SL-PCM, paving the way towards low-power, high-density memory and data storage. [ABSTRACT FROM AUTHOR]
- Published
- 2022
- Full Text
- View/download PDF