1. Band Alignment Transition from Type I to Type II of InP/ In0.48Ga0.52P quantum Dots
- Author
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Hyun Kum, Hyuna Jung, and Jinyoung Hwang
- Subjects
010302 applied physics ,Materials science ,Band gap ,business.industry ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,symbols.namesake ,chemistry.chemical_compound ,chemistry ,Strain distribution ,Quantum dot ,0103 physical sciences ,Valence band ,symbols ,Indium phosphide ,Optoelectronics ,0210 nano-technology ,Valence force field ,Hamiltonian (quantum mechanics) ,business ,Photonic crystal - Abstract
Band alignment transition from type-I to type-II of InP/In 0.48 Ga 0.52 P quantum dots (QDs) is observed by modifying the geometrical factors of the dome-shaped QDs. Strain distribution in InP/In 0.48 Ga 0.52 P QD is calculated using a valence force field (VFF) model. With the strain Hamiltonian from the VFF model, electrical structures of the QDs are obtained using 8-band k•p model. The results from this theoretical study show that the band alignment of the InP/In 0.48 Ga 0.52 P QDs can be tailored from type-I to type-II by controlling the size of the QDs, and flat valence band can be achieved at certain values of height and width of the QDs. In addition, InP/In 0.48 Ga 0.52 QDs of various sizes with the same effective bandgap but different band alignment is observed.
- Published
- 2018