1. Stabilization of domain structures in Rb-doped KTiOPO4 for high-temperature processes.
- Author
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Kianirad, Hoda, Lindgren, Gustav, Peña, Alexandra, Zukauskas, Andrius, Ménaert, Bertrand, Laurell, Fredrik, Boulanger, Benoît, and Canalias, Carlota
- Subjects
HIGH temperatures ,ANNEALING of semiconductors ,THERMAL stability ,THERMAL properties ,CRYSTALLIZATION - Abstract
A way to stabilize the domain structure in periodically poled Rb-doped KTiOPO
4 samples at high-temperatures is presented. The domain contraction along the b-crystallographic axis that is observed when crystals are annealed at high temperatures is suppressed when the ends of the domains along the b-axis are diced away. Additionally, the thermal stability of self-assembled domain gratings with a sub-μm average periodicity of 650 ± 200 nm and a domain-width of 225 ± 75 nm in mm-thick samples is investigated, and it is shown that the key factor for the domain stability is the domain width rather than the interdomain distance. [ABSTRACT FROM AUTHOR]- Published
- 2019
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