1. Morphological and Electrical Characterization of Ti and Zr Sputter-Deposited Thin Films
- Author
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I. C. Oppenheim and Eliane F. Chinaglia
- Subjects
Zirconium ,Materials science ,chemistry.chemical_element ,Nanotechnology ,Substrate (electronics) ,chemistry ,Electrical resistivity and conductivity ,Sputtering ,Crystallite ,Composite material ,Thin film ,Instrumentation ,Deposition (law) ,Titanium - Abstract
E. F. Chinaglia*,**, and I. C. Oppenheim* *Department of Metallurgy and Materials Engineering, Escola Politecnica, Universidade de Sao Paulo, Av. Prof. Mello Moraes, 2463, Sao Paulo, SP, 05508-900, Brasil. **Shimadzu do Brasil Comercio Ltda., Av. Marques de Sao Vicente, 1771, Sao Paulo-SP, 01139-003, Brasil. e-mail: tatachi@usp.br Keywords: resistivity, surface morphology, thin films, titanium, zirconium, sputtering, atomic force microscopy, reflection coefficient, Mayadas-Shazkes Thin film morphology and electrical resistivity play an important role in modern technologies. In particular, subcomponents fabricated by Ti play an increasing role in microelectronic device technology as well as in the biomedical area [1-2]. Here the influence of substrate temperature (during deposition) and film thickness on the surface morphology and electrical resistivity of polycrystalline Ti and Zr thin films have been investigated. The well established Matthiessen’s rule, originally suggested for bulk metals, is also valid for thin metal films [3]. The rule states that the various electron scattering processes that contribute to the total electrical resistivity (ρ) of a metallic thin film do so independently and additively; i.e., ρ = ρ
- Published
- 2005
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