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Titanium nitride (TiN) thin films have low electrical resistivity, good chemical and metallurgical stability, and exceptional mechanical properties. As such, we are interested in exploring TiN for use as mold material for micro-and nano replication. Focused ion beam (FIB) technique was successfully used to fabricate sub-micron sized pattern on a TiN/Si(100) wafer. This mask-free fabrication technique takes advantage of the kinetic precision of FIB; the energy of ions used was 40 KeV. The width and depth of each trench in the TiN mold are 390 nm and 280 nm respectively.

Diamond-like carbon (DLC) films with different structure were deposited on highly electrically conductive silicon substrates (SiO ySi), using d.c. magnetron sputtering deposition process. Their structure and electrochemical behavior in a 0.5 M H SO 2 24 solution were studied with micro-Raman spectroscopy, electrochemical impedance spectroscopic analysis and film impedance spectroscopy. The combined polarization resistance of silicon coated with DLC film increased to approximately 10 –10 V cm , 68 2

In order to fabricate good quality ferroelectric thin films, PbZrxTi(1-x)O3 (PZT) and SrBi2Ta2O9 (SBT) films were fabricated on SiO2/Si(100) substrates and on Pt/Ti/SiO2/Si(100) substrates by pulsed laser excimer deposition (PLD). X-ray diffraction, Rutherford backscattering analysis, and atomic force microscopy were used to characterize the structural properties of the samples, which were post-annealed at different temperatures. The results showed that the PZT and SBT films fabricated on Pt/Ti/SiO2/Si(100) substrates and annealed at 700 degreesC exhibited optimum properties. (C) 2002 Elsevier Science B.V. All rights reserved.

Textured Ca modified (Pb,La)TiO 3 (PLCT) films were deposited on Pt/Ti/SiO 2 /Si substrates using a metal-organic decomposition (MOD) process. The microstructure of the PLCT thin film was investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), and transmission electron microscopy (TEM). Electric properties were measured using the Pt/PLCT/Pt capacitor structure. The PLCT films exhibit good ferroelectric and dielectric properties.

Pb(Zr0.48Ti0.52)O-3 thin films at 20% excess Pb were synthesized on Pt/Ti/SiO2/Si(100) substrates at different annealing temperatures by a metal-organic decomposition process. The microstructure of the PZT films was investigated by x-ray diffraction and atomic force microscopy. The composition of the films was characterized by Rutherford Backscattering Spectroscopy (RBS). These results showed that The PZT films have perovskite phase coexisted with PbO2 phase. The PbO2 phase mainly was formed by excess Pb which congregate at boundaries of crystalline grains during the annealing process and may be absorbed part of oxygen ion at normal sites, thus leading to an increase of oxygen vacancies in the PZT film. PbO2 phase and oxygen vacancies act as pinning centres, which has an effect on the ferroelectric domain switching. This eventually resulted in an increase of fatigue rate in PZT films. (C) 2001 Kluwer Academic Publishers.

Pt-coated silicon substrates with strong (111) Pt texture were annealed in an oxidizing atmosphere at various temperatures. Dependence of the microstructure and morphology on oxygen partial pressure for SBLN films prepared by pulsed laser deposition were investigated by using X-ray diffraction and atomic force microscopy. The grain size and growth habits of SBLN films were influenced by oxygen partial pressure. As oxygen pressure increases at 10 Pa, nucleation and grains growth of the SBLN films were mainly influenced by the Pt grains of substrate. (100) and (310) texture growth of the SBLN film was revealed, and the film had good e(f) properties.

PbZT(0.52)Ti(0.48)O(3) (PZT)/YBa2Cu3O7-delta (YBCO) structures were fabricated on LaAlO3 and Y2O3-stabilized ZrO2 (YSZ) substrates by a pulsed-excimer-laser deposition method. The total dose effects on the Au/PZT/YBCO ferroelectric capacitors were considered by measuring the capacitance-voltage (C-V) characteristics and the retained polarization properties of the capacitor before and after gamma-ray irradiation. The results show that, with an increase of irradiation dose, for a ferroelectric capacitor which was fabricated on a LaAlO3 substrate, the retained polarization Delta P and the dielectric constant epsilon decreased, but the absolute value of the negative and positive coercive fields increased. For a ferroelectric capacitor which was fabricated on a YSZ substrate, Delta P and epsilon also decreased while the coercive fields drifted towards the positive voltage direction. All these facts are due to the effect of charges trapped by defects in the PZT layer and the interface of the capacitor during irradiation.

We firstly report the successful deposition of highly oriented Pb(Zr0.52Ti0.48)O3 (PZT) ferroelectric thin films on diamond substrates by a simple sol–gel process. The PZT thin films exhibited good surface morphological, structural and electrical characteristics. The electrical measurements were conducted on PZT films in metal–ferroelectric–metal (MFM) capacitor configuration. The typical remanent polarization and coercive electric field values were 5.1 μC/cm2 and 70.0 kV/cm, respectively, at an applied electric field of 300 kV/cm. The low leakage current of 10−8 A/cm2 was found at an applied electric field of 120 kV/cm.

PbZr0.52Ti0.48O3/YBa2Cu3O7−δ (PZT/YBCO) thin films have been fabricated on Y2O3 stabilized zirconate (YSZ) substrates by a pulsed excimer laser deposition (PLD) method. In order to investigate total dose radiation effects on the Au/PZT/YBCO ferroelectric capacitor, the capacitance–voltage (C–V) curves and the retained polarization property of the capacitor have been measured before and after γ-ray irradiation. The results showed that, with an increased total dose, the retained polarization and the dielectric constant decreased, but the coercive field drifted towards positive voltage direction. This is caused by charges trapped by defects in the PZT capacitor during irradiation.

PbZr 0.52 Ti 0.48 O 3 /YBa 2 Cu 3 O 7-δ (PZT/YBCO) thin films have been fabricated on LaAlO 3 substrate by the pulsed laser excimer deposition method. In order to investigate total dose radiation effects by 60 Co γ-irradiation on the Au/PZT/YBCO ferroelectric capacitor, the capacitance voltage (C V) and the retained polarization properties of the capacitor were measured before and after γ-ray irradiation The results showed that. with the increment of the total dose, the retained polarization (ΔP) and the dielectric constant (e) decreased, but the absolute value of the negative and positive coercitive fields increased. It is due to the effect of charges trapped by defects in the PZT capacitor during irradiation.

UV embossing combined with focused ion beam lithography (FIB) and soft lithography is demonstrated to be a viable method for quick and accessible three-dimensional large-area sub-micrometer patterning of biocompatible films. FIB lithography of titanium nitride thin film is also demonstrated to produce a very smooth surface suitable for nanopatterning.

Multilayer ferroelectric and ferromagnetic thin films were fabricated with the following composition and structure: La0.67Sr0.33MnOx/(Pb, La)(Ca, Ti)O3 (LSMO/PLCT) and (Pb, La)(Ca, Ti)O3/La0.67Sr0.33MnOx (PLCT/LSMO), with an intention of creating a device of new concept. The films were fabricated using metalorganic deposition. The LSMO/PLCT structured films exhibit the ferroelectric properties while the PLCT/LSMO structured films exhibit the ferromagnetic properties. Compared with the PLCT/Pt structure, the capacitance-frequency and tan δ-frequency properties of the LSMO/PLCT structure are degraded. The magnetoresistance of the PLCT/LSMO structure was measured and the results show that the metal-insulator transition temperature is lower than that of the LSMO/SiO2/Si structure. Furthermore, the magnetoresistance at 77 K and at the transition temperature for the PLCT/LSMO structure is higher than that of the LSMO/SiO2/Si structure. These effects can be explained by the piezoelectricity of the PLCT film depo...