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This paper reports the nanoscale texture and microstructure of a high-performance NdFeAs(O,F) superconducting thin film grown by molecular beam epitaxy on a textured MgO/Y$_2$O$_3$/Hastelloy substrate. The NdFeAs(O,F) film forms a highly textured columnar grain structure by epitaxial growth on the MgO template. Although the film contains stacking faults along the $ab$-plane as well as grain boundaries perpendicular to the $ab$-plane, good superconducting properties are measured: a critical temperature, $T _{\rm c}$, of 46 K and a self-field critical current density, $J_{\rm c}$, of $2 \times 10^6 \,{\rm A/cm^2}$ at 4.2 K. Automated crystal orientation mapping by scanning precession electron diffraction in transmission electron microscopy is employed to analyze the misorientation angles between adjacent grains in a large ensemble (247 grains). 99% of the grain boundaries show in-plane misorientation angles ($\Delta \gamma$) less than the critical angle $\theta_{\rm c}$, which satisfies one of the necessary conditions for the high $J_{\rm c}$. Comparing the columnar grain size distribution with the mean distance of the flux line lattice, the triple junctions of low-angle grain boundaries are found to be effective pinning centers, even at high temperatures ($\ge$35 K) and/or low magnetic fields., Comment: Main text with Supplement Material, 32 pages, 16 figures

The most effective way to enhance the dissipation-free supercurrent in presence of magnetic field for type II superconductors is the introduction of defects that acts as artificial pinning centres (APCs) for the vortices. For instance, the in-field critical current density of doped BaFe2As2 (Ba122), one of the most technologically important Fe-based superconductors, has been improved over the last decade by APCs created by ion-irradiation. The technique of ion-irradiation has been commonly implemented to determine the ultimate superconducting properties. However, this method is rather complicated and expensive. Here, we report on a surprisingly high critical current density and strong pinning efficiency close to the crystallographic c-axis for a K-doped Ba122 epitaxial thin film without APCs, achieving performance comparable to ion-irradiated K-doped Ba122 single crystals. Microstructural analysis reveals that the film is composed of columnar grains having width around 30-60 nm. The grains are rotated around the b- (or a-) axis by 1.5 degree and around the c-axis by -1 degree, resulting in the formation of low-angle grain boundary networks. This study demonstrates that the upper limit of in-field properties reached in ion-irradiated K-doped Ba122 is achievable by grain boundary engineering, which is a simple and industrially scalable manner., Main text with Supplement Material

The recent realisations of hydrogen doped $Ln$FeAsO ($Ln$=Nd and Sm) superconducting epitaxial thin films call for further investigation of their structural and electrical transport properties. Here, we report on the microstructure of a NdFeAs(O,H) epitaxial thin film and its temperature, field, and orientation dependencies of the resistivity and the critical current density $J_{\rm c}$. The superconducting transition temperature $T_{\rm c}$ is comparable to NdFeAs(O,F). Transmission electron microscopy investigation supported that hydrogen is homogenously substituted for oxygen. A high self-field $J_{\rm c}$ of over 10 MA/cm$^2$ was recorded at 5 K, which is likely to be caused by a short London penetration depth. The anisotropic Ginzburg-Landau scaling for the angle dependence of $J_{\rm c}$ yielded temperature-dependent scaling parameters $\gamma_{\rm J}$ that decreased from 1.6 at 30 K to 1.3 at 5 K. This is opposite to the behaviour of NdFeAs(O,F). Additionally, $\gamma_{\rm J}$ of NdFeAs(O,H) is smaller than that of NdFeAs(O,F). Our results indicate that heavily electron doping by means of hydrogen substitution for oxygen in $Ln$FeAsO is highly beneficial for achieving high $J_{\rm c}$ with low anisotropy without compromising $T_{\rm c}$, which is favourable for high-field magnet applications., Comment: 17 pages, 6 figures with Supplementary Information, accepted in Scientific Reports

The iron-based superconductor ${\mathrm{Ba}}_{1\ensuremath{-}x}{\mathrm{K}}_{x}{\mathrm{Fe}}_{2}{\mathrm{As}}_{2}$ is emerging as a key material for high magnetic field applications owing to the recent developments in superconducting wires and bulk permanent magnets. Epitaxial thin films play important roles in investigating and artificially tuning physical properties; nevertheless, the synthesis of ${\mathrm{Ba}}_{1\ensuremath{-}x}{\mathrm{K}}_{x}{\mathrm{Fe}}_{2}{\mathrm{As}}_{2}$ epitaxial thin films remained challenging because of the high volatility of K. Herein, we report the successful growth of epitaxial ${\mathrm{Ba}}_{1\ensuremath{-}x}{\mathrm{K}}_{x}{\mathrm{Fe}}_{2}{\mathrm{As}}_{2}$ thin films by molecular-beam epitaxy with employing a combination of fluoride substrates $({\mathrm{CaF}}_{2},$ ${\mathrm{SrF}}_{2}, \mathrm{and} {\mathrm{BaF}}_{2})$ and a low growth temperature (350--420 \ifmmode^\circ\else\textdegree\fi{}C). Our epitaxial thin film grown on ${\mathrm{CaF}}_{2}$ showed sharp superconducting transition at an onset critical temperature of 36 K, slightly lower than bulk crystals by \ensuremath{\sim}2 K due presumably to the strain effect arising from the lattice and thermal expansion mismatch. Critical current density $({J}_{\mathrm{c}})$ determined by the magnetization hysteresis loop is as high as $2.2\phantom{\rule{0.28em}{0ex}}\mathrm{MA}/\mathrm{c}{\mathrm{m}}^{2}$ at 4 K under self-field. In-field ${J}_{\mathrm{c}}$ characteristics of the film are superior to the bulk crystals. The realization of epitaxial thin films opens opportunities for tuning superconducting properties by epitaxial strain and revealing intrinsic grain boundary transport of ${\mathrm{Ba}}_{1\ensuremath{-}x}{\mathrm{K}}_{x}{\mathrm{Fe}}_{2}{\mathrm{As}}_{2}$.

The electric transport properties of a GdBa2Cu3O 7 − δ thin film containing 12 mol% nano-sized BaHfO3 (BHO) particles grown by chemical solution deposition were investigated in a wide range of temperatures (4.2 ≤T ≤ 77 K) and magnetic fields up to μ 0 H = 19 T. The exponent n of the electric field–current density characteristics ( E ∝ J n ) depends on critical current density J c as (n–1) ∝ J c α (α ∼ 0.45) irrespective of measurement temperature for H ∥ c. On the other hand, this relation does not hold for H ∥ ab. The angular dependence of J c is almost similar to that of n except for the angle close to the ab-plane. A dip of n around this angle regime was observed below 77 K, whereas J c exhibited a maximum. At T ≤ 50 K a tiny peak in the dip was observed that increases with decreasing temperatures. These results suggest that the pinning mechanism changes with temperature for H ∥ ab.

We have grown thin films of CaAgAs by molecular beam epitaxy, which was theoretically proposed to be a topological insulator. The temperature dependence of resistivity and the carrier concentration at 4 K were similar to the reported results of bulk samples. However, the magnetoresistance exhibited a steep increase at low magnetic fields, a behavior not observed for bulk samples. This steep increase of resistivity is ascribable to the weak antilocalization effect and provides clues to the nature of the topological surface state of CaAgAs.

NdFeAs(O,F) thin films having different fluorine contents were grown on 5 deg. or 10 deg. vicinal cut MgO and CaF2 single crystalline substrates by molecular beam epitaxy. Structural characterisations by reflection high-energy electron diffraction and x-ray diffraction confirmed the epitaxial growth of NdFeAs(O,F). The resistivities of the ab-plane and along the c-axis were derived from the resistivity measurements in the longitudinal and transversal directions. The c-axis resistivity was always higher than the ab-plane resistivity, resulting from the anisotropic electronic structure. The resistivity anisotropy at 300 K was almost constant in the range of 50-90 irrespective of the F content. On the other hand, the resistivity anisotropy at 56 K showed a strong fluorine dependence: the resistivity anisotropy was over 200 for the films with optimum F contents (superconducting transition temperature Tc around 50 K), whereas the resistivity anisotropy was around 70 for the films in the under-doped regime (Tc between 35 and 45 K). The mass anisotropy are the effective masses along the c-axis and on the ab-plane) close to Tc derived from the anisotropic Ginzburg-Landau approach using the angular-dependency of the ab-plane resistivity was in the range from 2 to 5. On the assumption that the square of the mass anisotropy is equal to the resistivity anisotropy, those values are small compared to the normal state anisotropy.

Grain boundaries (GBs) as two-dimensional defects strongly influence and determine the current carrying capabilities of superconductors, may it be by providing efficient pinning centres or by constituting weak links. In this chapter, GB issues of polycrystalline bulks and wires as well as polycrystalline and bicrystal thin films of Fe-based superconductors are discussed for the most-studied, application-relevant systems: LnFeAs(O,F) (Ln: lanthanoid), P-, Co-, and Ni-containing AeFe2As2, (Ae: alkali earth), and Fe(Se,Te) in comparison to the cuprate high-Tc superconductors.

An epitaxial NdFeAs(O,F) thin film of 90 nm thickness grown by molecular beam epitaxy on MgO single crystal with Tc = 44.2 K has been investigated regarding a possible vortex glass-liquid tran-sition. The voltage-current characteristics show excellent scalability according to the vortex-glass model with a static critical exponent {\nu} of around 1.35 and a temperature-dependent dynamic exponent z increasing from 7.8 to 9.0 for the investigated temperature range. The large and non-constant z values are discussed in the frame of 3D vortex glass, thermally activated flux motion, and inhomogeneity broadening., Comment: 20 pages, 4 figures

The possibility of p-wave pairing in superconductors has been proposed more than five decades ago, but has not yet been convincingly demonstrated. One difficulty is that some p-wave states are thermodynamically indistinguishable from s-wave, while others are very similar to d-wave states. Here we studied the self-field critical current of NdFeAs(O,F) thin films in order to extract absolute values of the London penetration depth, the superconducting energy gap, and the relative jump in specific heat at the superconducting transition temperature, and find that all the deduced physical parameters strongly indicate that NdFeAs(O,F) is a bulk p-wave superconductor. Further investigation revealed that single atomic layer FeSe also shows p-wave pairing. In an attempt to generalize these findings, we re-examined the whole inventory of superfluid density measurements in iron-based superconductors show quite generally that most of the iron-based superconductors are p-wave superconductors., Comment: 35 pages, 15 figures

Fe-based superconductors present a large variety of compounds whose physical properties strongly depend on the crystal structure and chemical composition. Among them, the so-called 1111 compounds show the highest critical temperature Tc in the bulk form. Here we demonstrate the realization of excellent superconducting properties in NdFeAs(O1−xFx). We systematically investigated the correlation between the microstructure at the nanoscale and superconductivity in an epitaxial 22 nm NdFeAs(O1−xFx) thin film on a MgO single crystalline substrate (Tc = 44.7 K). Atomic resolution analysis of the microstructure by transmission electron microscopy and atom probe tomography identified several defects and other inhomogeneities at the nanoscale that can act as extrinsic pinning centers. X-Ray diffraction and transmission electron microscopy displayed a broad variation of the a-axis lattice parameter either due to a partially strained layer at the interface to the substrate, high local strain at dislocation arrays, mosaicity, or due to composition variation within the film. The electrical transport properties are substantially affected by intrinsic pinning and a matching field corresponding to the film thickness and associated with the Bean–Livingston surface barrier of the surfaces. The thin film showed a self-field critical current density Jc(4.2 K) of ∼7.6 MA cm−2 and a record pinning force density of Fp ≈ 1 TN m−3 near 35 T for H‖ab at 4.2 K. These investigations highlight the role of the microstructure in fine-tuning and possibly functionalizing the superconductivity of Fe-based superconductors.

We report on the growth of NdFeAs(O,H) epitaxial thin films on MgO (001) substrates and their electrical transport properties. The maximum carrier density of the NdFeAs(O,H) films was more than twice as large as that of our NdFeAs(O,F) films. This enabled us to investigate the physical properties of heavily electron doped NdFeAsO, which could not be achieved with NdFeAs(O,F). The irreversibility field Hirr of NdFeAs(O,H) was larger than that of NdFeAs(O,F) for H || c due to the decrease in the anisotropy of the upper critical field. A very high critical current density of 17 MA cm^−2 was recorded at 4 K, which corresponds to about 13% of the depairing current density of NdFeAs(O,F)., ファイル公開：2021-09-01

Submicron sized strip lines of NdFeAs(O,F) were fabricated and the transport properties were studied. By using laser lithography and dry etching, strip lines with a width of down to 0.84 μm were fabricated. The superconducting critical temperature (T c) was not seriously affected by the fabrication process, but a significant decrease of the critical current density (J c) was observed for strip lines narrower than 2 μm when the sample was patterned by isotropic etching. By employing an anisotropic etching process, on the other hand, the deterioration of J c was largely prevented, and the yield of obtaining a strip line with J c higher than 5 MA/cm2 rose considerably.

Understanding the nature of grain boundary (GB) characteristics in combination with creating low-energy GBs by modifying the processing conditions, so-called GB engineering, is of great importance for controlling and reducing the defect density, leading to improved functionalities of polycrystalline metals and ceramics. For superconductors particularly, including both low- and high-temperature superconductors, GB engineering has been developed to improve especially the critical current densities, Jc, across these GBs. The intrinsic physical properties of a given superconductor such as the coherence length, the order parameter symmetry, and their anisotropies would determine the strategy of GB engineering. In this topical review, we present an overview of the GB characteristics and GB engineering of Fe-based superconductors (FBS) in the form of polycrystalline bulks and wires, and thin films with application potential, e.g. for high-field magnet wires. Prior to the FBS, GB engineering of the cuprates and MgB2 are also briefly covered., Invited review

The discovery of Fe-based superconductors (FBS) as the second class of high-temperature superconducting transition (high-Tc) materials after the cuprates generated a significant impact on the community of fundamental and applied superconductivity research. Whenever a new class of high-Tc superconducting materials is discovered, a lot of effort is devoted to growing single crystals and epitaxial thin films for exploring basic physical quantities. Although several properties of FBS are similar to the cuprates (large upper critical fields, resulting from a short coherence lengths, and small carrier density), others are distinctly different. For instance, in FBS the symmetry of the superconducting order parameter is most likely not a d-wave but an s+-wave, depending on the stoichiometry, crystallographic system, and doping level. Additionally, the critical current densities of FBS are less sensitive to the presence of grain boundaries (GBs) than those of the high-Tc cuprates. These features are highly beneficial for the realization of cheaper conductors for high-field magnets at low temperatures. Indeed, several groups have demonstrated FBS thin films on technical metallic substrates and powder-in-tube processed FBS wires as proof-of-principle studies for conductor applications. FBS on technical substrates also give many opportunities for studying how GB networks affect the critical current and how uniaxial strain impacts the superconducting properties. In this article, we review FBS thin films, especially on technical metallic substrates, and focus on application-relevant properties like pinning improvement by natural and artificial defects as well as the transparency of GBs and GB networks. The recent development of FBS thin films on technical substrates and their superconducting properties are presented and the performance gap with respect to films on single crystals is discussed., Comment: Figures and some of the tables are placed at the end of document

Nanowires of Co-doped BaFe 2 As 2 have been realized and characterized. Thin films having thickness of 20 nm were grown on CaF 2 (100) substrates by pulsed laser deposition. The films were then passivated in situ with a thin layer of MgAl 2 O 4 . Using electron beam lithography, several submicron nanowire structures were patterned and electrically contacted to gold pads. The nanostructures have a superconducting critical temperature T of 16 K, for a 500-nm-wide nanowire, and properties, in terms of normal state resistivity (0.3 mΩ·cm) and critical current (1 MA/cm 2 at 3 K), comparable with those of NbN nanowires. Moreover, they show localization effects in the normal state, while the current-voltage characteristics are dominated by flux creep.

We report on the growth of NdFeAs(O,F) superconducting thin films by molecular beam epitaxy without having a NdOF secondary layer that was necessary for fluorine doping in our previous studies. The key to realizing the direct growth of a superconducting film was the enhancement of migration of the raw materials on the substrate, which was accomplished by two steps. Firstly, we increased the growth temperature that improved the crystalline quality of parent NdFeAsO thin films. Secondly, the atmosphere in the chamber during the growth was improved by changing the crucible material of the Fe source cell. Highly textured NdFeAs(O,F) thin films with critical temperatures up to 50 K were obtained, and terraces were observed by atomic force microscope, indicating a two-dimensional growth. However, precipitates were also found on the surface, which suggests that enhancing further the migration is necessary for obtaining a NdFeAs(O,F) thin film with a better quality.

We prepared planar hybrid Josephson junctions using Co-doped BaFeAs thin films and polished single crystals as base electrode, sputtered, and subsequently oxidized titanium layers as barrier and a counter electrode from evaporated lead. On all junctions, RCSJ-like current–voltage characteristics could be observed. The obtained products at 4.2 K range up to 95V for thin film junctions and up to 1.15 mV for junctions on single crystals. For most of the junctions, an excess current with variable contribution to the total current could be observed. Unusual temperature dependencies are discussed for the critical and the excess currents, respectively. Investigations of the junctions under microwave irradiation were performed, therein Shapiro steps up to high orders and very clear modulations of the steps could be observed. Additionally, the origin of the excess current is discussed with respect to the microwave dependence. Furthermore, instead of a single junction, a network-like modulation behavior of the critical current in magnetic fields was observed.

The temperature dependence of the resistivity of epitaxial Ba(Fe1−xCox)2As2 thin films (with nominal doping x = 0.08, 0.1 and 0.15) has been analysed and compared with analogous measurements on single crystals taken from literature. The ρ(T ) of thin films looks different from that of single crystals, even when the cobalt content is the same. All ρ(T ) curves can be fitted by considering an effective two-band model (with holes and electrons bands) in which the electrons are more strongly coupled with the bosons (spin fluctuations) than holes, while the effect of impurities is mainly concentrated in the hole band. Within this model the mediating boson has the same characteristic energy in single crystals and thin films, but the shape of the transport spectral function at low energy has to be very different, leading to a "hardening" of the electron-boson spectral function in thin films, associated with the strain induced by the substrate

The physical properties of $\mathrm{M}{\mathrm{n}}_{3}\mathrm{CuN}$ were studied using thin films. We found that an annealing process was very effective to improve the film quality, the key of which was the use of Ti that prevented the formation of oxide impurities. Using these high-quality thin films, we found strong strain dependence for the ferromagnetic transition temperature (${T}_{C}$) and a sign change of the Hall coefficient at ${T}_{C}$. The analysis of Hall coefficient data revealed a sizable decrease of hole concentration and a large increase of electron mobility below ${T}_{C}$, which is discussed in relation to the electronic structure of this material.

We have realized nanowires using Co-doped BaFe2As2 thin films with 20 nm thickness deposited on CaF2 (100) substrates by pulsed laser deposition. The films were passivated in-situ with a thin layer of MgAl2O4. Subsequently, several submicron nanowire structures were patterned using electron beam lithography, and electrically contacted to gold pads. Electrical characterizations of the realized nanostructures show good properties in terms of material resistivity and critical current, with a Tc of 16 K for a 500 nm wide nanowire.

We report on the growth of NdFeAs(O,F) thin films on [001]-tilt MgO bicrystal substrates with misorientation angle theta_GB=6{\deg}, 12{\deg}, 24{\deg} and 45{\deg}, and their inter- and intra-grain transport properties. X-ray diffraction study confirmed that all our NdFeAs(O,F) films are epitaxially grown on the MgO bicrystals. The theta_GB dependence of the inter-grain critical current density Jc shows that, unlike Co-doped BaFe2As2 and Fe(Se,Te), its decay with theta_GB is rather significant. As a possible reason of this result, fluorine may have diffused preferentially to the grain boundary region and eroded the crystal structure., Comment: Proceedings of the 30th International Symposium on Superconductivity, 7 figures. Accepted for publication

We report on electrical transport properties of epitaxial Ba(Fe1-xNix)2As2 thin films grown by pulsed laser deposition in static magnetic fields up to 35 T. The thin film shows a critical temperature of 17.2 K and a critical current density of 5.7x10^5 A/cm^2 in self field at 4.2 K while the pinning is dominated by elastic pinning at two-dimensional nonmagnetic defects. Compared to single-crystal data, we find a higher slope of the upper critical field for the thin film at a similar doping level and a small anisotropy. Also an unusual small vortex liquid phase was observed at low temperatures, which is a striking difference to Co-doped BaFe2As2 thin films., Comment: Accepted for publication in Applied Physics Letters, 5 figures

We investigate the iron-based superconductor Ba(Fe 1−x Co x ) 2As 2 (Ba-122) regarding its superconducting properties and possible applications. Therefore, Ba-122 thin films are used as base electrode to prepare different kinds of hybrid Josephson junctions with a counter electrode of the conventional superconductor Pb. Additionally, we use both c-axis and a b-plane transport geometries and different kinds of barriers like interface-engineered surfaces, sputtered titanium oxide and gold layers. Temperature dependent I– V characteristics as well as magnetic field dependence and microwave response of the junctions are shown. The examined I– V characteristics and I c R n– T behaviours of each junction type are compared and described according to the electrical behaviour of the respective normal conducting or insulating barrier. While the I c R n product of the interface-engineered barrier junction was 12 μV and the planar junction with Au barrier showed 18 μV, we could increase the I c R n to 90 μV for planar TiO x barrier junctions.

Surface properties of Co-doped BaFe 2 As 2 (Ba-122) thin films prepared by pulsed laser deposition on MgO with Fe buffer layer and CaF 2 substrates were inspected by atomic force microscopy, scanning spreading resistance microscopy, scanning tunneling microscopy, X-ray photoelectron spectroscopy, auger electron spectroscopy/microscopy and point contact spectroscopy (PCS). Selected PCS spectra were fitted by extended 1D BTK model. The measurements were done on as-received as well as ion beam etched surfaces. Our results show that the substrate is considerably influencing the surface properties of the films, particularly the topography and surface conductivity distribution, what can affect results obtained by surface-sensitive techniques like PCS.

We have systematically investigated the grain boundary (GB) angle dependence of transport properties for NdFeAs(O,F) fabricated on [001]-tilt symmetric MgO bicrystal substrates. In our previous study, NdFeAs(O,F) bicrystal films showed a weak-link behaviour even at a GB angle of 6{\deg}. However, this was caused by an extrinsic effect originating from the damage to both NdFeAs(O,F) and MgO substrate by excess F-diffusion along the grain boundary. To investigate the intrinsic nature of grain boundaries, we minimized the damage to NdFeAs(O,F) and MgO by reducing the deposition temperature of NdOF over-layer needed for F-doping. The resultant NdFeAs(O,F) bicrystal films have a critical angle of 8.5{\deg}, above which Jc starts to decrease exponentially. This critical angle is almost the same as those of other Fe-based superconductors., Comment: Accepted in Superconductor Science and Technology

To apply tensile or compressive uniaxial strain to functional thin films, we propose a novel approach in combining a piezoelectric-based device and a technical metallic substrate used widely in second generation coated conductors (i.e. superconducting tapes). A strain-induced shift of the superconducting transition temperature of 0.1 K for Co-doped BaFe2As2 was observed along the [100] direction, corresponding to a uniaxial pressure derivative dT c/dp 100 = −4 K/GPa. For Mn3CuN, a uniaxial strain derivative along the [100] direction of the Curie temperature dTC/depsilon 100 = 13 K/% was observed. The current approach is applicable to various functional thin films in a wide range of temperatures., ファイル公開：2020-01-04

In this work we present multilayers consisting of Fe and Co-doped BaFe 2 As 2 fabricated by UHV pulsed laser deposition. Employing the advantage of a coherent interfacial bonding between the FeAs tetrahedra of the iron pnictide and bcc Fe enables the growth of epitaxial bi- and multilayers of Fe and the new Fe-based superconductors with high crystalline quality. Epitaxial growth of the multilayers was controlled in situ by reflection high energy electron diffraction (RHEED) and after film growth by X-ray diffraction and TEM analysis. The stoichiometry determined by Auger electron spectroscopy (AES) indicated As-deficient layers of Co-doped Ba-122. The multilayers exhibit critical temperatures of T c,90 = 29 K which is so far the highest critical temperature reported for Co-doped Ba-122. We propose that the T c -enhancement is caused by As-vacancies.

For superconducting films, the optical intra-gap conductivity provides valuable information on the superconductivity mechanism, in particular on the gap symmetry, quasiparticles, and superconducting carrier dynamics. Experimentally, however, it is extracted with rather large uncertainty caused by the huge negative value of the dielectric constant. We have performed systematic numerical analysis of Fabry–Perot resonators, which consist of two identical superconducting iron pnictide thin films on dielectric substrates that are positioned face-to-face to each other and are separated by a spacer. We demonstrate that such a Fabry–Perot arrangement can significantly enhance the accuracy to the dynamical conductivity σ 1 of the films, as the efficiency of interaction of the probing radiation with the superconducting films is improved. Using a coherent source terahertz spectrometer (4–45 cm−1) with a Mach–Zehnder interferometer, we have measured the complex transmissivity of three Fabry–Perot resonators composed by identical pairs of Ba(Fe0.9Co0.1)2As2 films with the thicknesses: 25, 30, and 50 nm. We show that the experimental spectra can be well described by a corresponding five-layer model based on Fresnel’s equations and analyze the advantages and challenges of the Fabry–Perot resonant technique for iron pnictide films.

We report on the systematic characterization of Ba(Fe$_{0.92}$Co$_{0.08}$)$_2$As$_2$ epitaxial thin films on CaF$_2$ substrate in view of their possible use for superconducting electronic applications. By using different and complementary techniques we studied the morphological characteristics of the surface, the structural properties, the magnetic response, and the superconducting properties in terms of critical temperature, critical current, and energy gaps. Particular attention was paid to the homogeneity of the films and to the comparison of their superconducting properties with those of single crystals of the same compound., 19 pages, 7 figures. Preprint version

For the investigation of the superconducting properties of iron-based superconductors Josephson junctions as well as Andreev reflection studies are potential tools. Therefore, we prepared different kinds of junctions, based on transport in direction of c-axis and ab-plane, respectively. The first one was a planar hybrid superconductor-normal metal-superconductor (SNS’) thin film junction for transport studies along the c-axis. We used a BaFe1.8Co0.2As2 (Ba-122) thin film (thickness ≈ 80 nm) prepared by pulsed laser deposition (PLD) as base electrode and a lead indium alloy as counter electrode, while the normal metal (barrier) layer was formed by thin gold films. By tuning the thickness of the gold layer and the area of the tunneling window, we were able to switch the behavior of our junction. For a thin gold layer (≈ 5 nm) and greater areas, RCSJ-like Josephson behavior can be observed with a radiation dependent excess current and nearly linear temperature dependence of the critical current. Increasing the thickness of the gold layer to 10 nm leads to conductance spectra, which are dominated by Andreev reflection and which show no remaining sign of Josephson effects. Secondly, an edge-type junction for transport measurements in the ab-plane of the pnictide layer, was prepared. It also is realized with PbIn as counter electrode, but with no artificial thin film. The temperature dependent conductance spectra showed some interesting features, which cannot be described within usual theoretical models. We introduced a third geometry, phase-sensitive corner junctions, which could ultimately test the pairing symmetry of Ba-122, if it is s± type.

We have successfully grown epitaxial, superconducting films of Ba(Fe1-xCox)2As2 (Ba-122)with x ~ 0.1. The films grow without observable correlated defects parallel to the c-axis, as confirmed by TEM. This is also reflected in the absence of a caxis peak in Jc({\theta}). In contrast to cuprate high-Tc superconductors such as YBa2Cu3O7-d or even Bi2Sr2Ca2Cu3O10-d, the pnictides show a rather low anisotropic behavior in their Jc({\theta}) behavior as well as in their upper critical fields, Hc2. As a multiband superconductor, Ba-122 exhibits a temperature dependent electronic mass anisotropy., Comment: contribution at ASC2010, accepted for publication in IEEE Trans. Appl. Supercond

The effect of $\alpha$-particle irradiation on a NdFeAs(O,F) thin film has been investigated to determine how the introduction of defects affects basic superconducting properties, including the critical temperature $T_c$ and the upper critical field $H_{c2}$, and properties more of interest for applications, like the critical current density $J_c$ and the related pinning landscape. The irradiation-induced suppression of the film $T_c$ is significantly smaller than on a similarly damaged single crystal. Moreover $H_{c2}$ behaves differently, depending on the field orientation: for H//c the $H_{c2}$ slope monotonically increases with increasing disorder, whereas for H//ab it remains constant at low dose and it increases only when the sample is highly disordered. This suggests that a much higher damage level is necessary to drive the NdFeAs(O,F) thin film into the dirty limit. Despite the increase in the low temperature $H_{c2}$, the effects on the $J_c$(H//c) performances are moderate in the measured temperature and field ranges, with a shifting of the pinning force maximum from 4.5 T to 6 T after an irradiation of $2\times10^{15} cm^{-2}$. On the contrary, $J_c$(H//ab) is always suppressed. The analysis demonstrates that irradiation does introduce point defects acting as pinning centres proportionally to the irradiation fluence but also suppresses the effectiveness of c-axis correlated pinning present in the pristine sample. We estimate that significant performance improvements may be possible at high field or at temperatures below 10 K. The suppression of the $J_c$(H//ab) performance is not related to a decrease of the $J_c$ anisotropy as found in other superconductors. Instead it is due to the presence of point defects that decrease the efficiency of the ab-plane intrinsic pinning typical of materials with a layered structure., Comment: 12 pages, 9 figures

Consecutive proton irradiation of iron pnictides reduces the superconducting transition temperature to decrease monotonically. Our systematic optical THz investigations of Ba(Fe$_{0.9}$Co$_{0.1}$)$_2$As$_2$ thin films reveal, however, that the low-energy superconducting gap is first suppressed, but recovers for higher irradiation doses. At the same time the decrease of the superfluid density with disorder comes to a halt. These observations are in excellent agreement with theoretical calculations, which predict a disorder-induced transition of the order parameter from $s_{\pm}$ to $s_{++}$ symmetry. Thereby we solve the longstanding puzzle of the iron pnictides gap symmetry in favor of $s_{\pm}$-symmetry and demonstrate THz spectroscopy as a tool to determine the symmetry of the superconducting order parameter.

FeSe0.5Te0.5 thin films were grown by pulsed laser deposition on CaF2, LaAlO3 and MgO substrates and structurally and electro-magnetically characterized in order to study the influence of the substrate on their transport properties. The in-plane lattice mismatch between FeSe0.5Te0.5 bulk and the substrates shows no influence on the lattice parameters of the films, whereas the type of substrates affects the crystalline quality of the films and, therefore, the superconducting properties. The film on MgO showed an extra peak in the angular dependence of critical current density Jc({\theta}) at {\theta} = 180{\deg} (H || c), which arises from c-axis defects as confirmed by transmission electron microscopy. In contrast, no Jc({\theta}) peaks for H || c were observed in films on CaF2 and LaAlO3. Jc({\theta}) can be scaled successfully for both films without c-axis correlated defects by the anisotropic Ginzburg-Landau (AGL) approach with appropriate anisotropy ratio {\gamma}J. The scaling parameter {\gamma}J is decreasing with decreasing temperature, which is different from what we observed in FeSe0.5Te0.5 films on Fe-buffered MgO substrates., Comment: accepted for publication in SUST

A systematic characterization of Co-doped BaFe2As2(Ba-122) thin films has been carried out. Two samples were available, one grown on CaF2substrate and the other on MgO with an Fe buffer layer. The goal was to investigate films’ magnetic and superconducting properties, their reciprocal interplay, and the role played by the Fe buffer layer in modifying them. Morphological characterization and Energy Dispersive X-ray analyses on the Fe-buffered sample demonstrate the presence of diffused Fe close to the Co-doped Ba-122 outer surface as well as irregular holes in the overlying superconducting film. These results account for hysteresis loops obtained with magneto-optic Kerr effect measurements and observed at both room and low temperatures. The magnetic pattern was visualized by magneto-optical imaging with an indicator film. Moreover, we investigated the onset of superconductivity through a measure of the superconducting energy gap. The latter is strictly related to the decay time of the excitation produced by an ultrashort laser pulse and has been determined in a pump-probe transient reflectivity experiment. A comparison of results relative to Co-doped Ba-122 thin films with and without Fe buffer layer is finally reported.

For the development of superconducting electronic devices made from iron-arsenide superconductors, thin films have to be patterned into sub-micrometer sized structures while retaining high superconducting transition temperature ( T C ) and critical current ( I C ) values. To investigate current transport properties, we structure Ba(Fe,Co) 2 As 2 thin films with and without Fe buffer layers into μm- and sub-μm-bridges and measure the temperature- and field-dependent I C . The process of penetration and de-pinning of self-generated and externally excited magnetic vortices in such bridges is discussed.

We report on the growth of epitaxial Fe1+δ Se0.5Te0.5 thin films on 0°, 5°, 10°, 15° and 20° vicinal cut CaF2 single crystals by pulsed laser deposition. In situ electron and ex situ x-ray diffraction studies reveal a tilted growth of the Fe1+δ Se0.5Te0.5 films, whereby under optimized deposition conditions the c-axis alignment coincides with the substrate [001] tilted axis up to a vicinal angle of 10°. Atomic force microscopy shows a flat island growth for all films. From resistivity measurements in longitudinal and transversal directions, the ab- and c-axis components of resistivity are derived and the mass anisotropy parameter is determined. Analysis of the critical current density indicates that no effective c-axis correlated defects are generated by vicinal growth, and pinning by normal point core defects dominates. However, for Hab the effective pinning centers change from surface defects to point core defects near the superconducting transition due to the vicinal cut. Furthermore, we show in angular-dependent critical current density data a shift of the ab-planes maxima position with the magnetic field strength.

Highly textured NdFeAs(O,F) thin films have been grown on ion beam assisted deposition (IBAD)-MgO/Y2O3/Hastelloy substrates by molecular beam epitaxy. The oxypnictide coated conductors showed a superconducting transition temperature (Tc) of 43 K with a self-field critical current density (Jc) of 7.0 x 104 A/cm2 at 5 K, more than 20 times higher than powder-in-tube processed SmFeAs(O,F) wires. Albeit higher Tc as well as better crystalline quality than Co-doped BaFe2As2 coated conductors, in-field Jc of NdFeAs(O,F) was lower than that of Co-doped BaFe2As2. These results suggest that grain boundaries in oxypnictides reduce Jc significantly compared to that in Co-doped BaFe2As2 and, hence biaxial texture is necessary for high Jc., 4 pages, 4 figures

A detailed characterization of the voltage-noise properties has been performed in FeTe0.5Se0.5 epitaxial thin films and Co-doped BaFe2As2 bilayers, deposited by pulsed laser deposition. In all the samples analyzed, the experimental voltage-spectral density has a 1/f noise component. Different behaviors are observed for the bias current and temperature dependencies of this 1/f noise, and are related to specific structural and electric transport properties of the two materials.

Angle-resolved transport measurements revealed that planar defects dominate flux pinning in the investigated Co-doped BaFe2As2 thin film. For any given field and temperature, the critical current depends only on the angle between the crystallographic c-axis and the applied magnetic field but not on the angle between the current and the field. The critical current is therefore limited only by the in-plane component of the Lorentz force but independent of the out-of-plane component, which is entirely balanced by the pinning force exerted by the planar defects. This one-dimensional pinning behavior shows similarities and differences to intrinsic pinning in layered superconductors., Comment: 8 pages, 6 figures

The anisotropy of the critical current density Jc depends in general on both the properties of the flux lines (such as line tension, coherence length and penetration depth) and the properties of the defects (such as density, shape, orientation etc.). Whereas the Jc anisotropy in microstructurally clean films can be scaled to an effective magnetic field containing the Ginzburg-Landau anisotropy term, it is in general not possible (or only in a limited field range) for samples containing extended defects. Here, the Jc anisotropy of a Co-doped BaFe2As2 sample with 45{\deg} [001] tilt grain boundaries (GBs), i.e. grain boundaries created by 45{\deg} in-plane rotated grains, as well as extended Fe particles is investigated. This microstructure leads to c-axis correlated pinning, both due to the GBs and the Fe particles and manifests in a c-axis peak in the Jc anisotropy at low magnetic fields and a deviation from the anisotropic Ginzburg-Landau scaling at higher fields. Strong pinning at ellipsoidal extended defects, i.e. the Fe particles, is discussed, and the full Jc anisotropy is fitted successfully with the vortex path model. The results are compared to a sample without GBs and Fe particles. 45{\deg} GBs seem to be good pinning centers rather than detrimental to current flow., Comment: 8 pages, 7 figures, CEC-ICMC 2013 proceeding, accepted for publication in Advances in Cryogenic Engineering (Materials)

The recently discovered oxypnictide superconductor SmFeAs(O,F) is the most attractive material among the Fe-based superconductors due to its highest transition temperature of 56 K and potential for high-field performance. In order to exploit this new material for superconducting applications, the knowledge and understanding of its electro-magnetic properties are needed. Recent success in fabricating epitaxial SmFeAs(O,F) thin films opens a great opportunity to explore their transport properties. Here we report on a high critical current density of over 105 A/cm2 at 45 T and 4.2 K for both main field orientations, feature favourable for high-field magnet applications. Additionally, by investigating the pinning properties, we observed a dimensional crossover between the superconducting coherence length and the FeAs interlayer distance at 30–40 K, indicative of a possible intrinsic Josephson junction in SmFeAs(O,F) at low temperatures that can be employed in electronics applications such as a terahertz radiation source and a superconducting Qubit.

Surface properties of Co-doped BaFe2As2 epitaxial superconducting thin films were inspected by X-ray photoelectron spectroscopy, scanning spreading resistance microscopy (SSRM), and point contact spectroscopy (PCS). It has been shown that surface of Fe-based superconductors degrades rapidly if being exposed to air, what results in suppression of gap-like structure on PCS spectra. Moreover, SSRM measurements revealed inhomogeneous surface conductivity, what is consistent with strong dependence of PCS spectra on contact position. Presented results suggest that fresh surface and small probing area should be assured for surface sensitive measurements like PCS to obtain intrinsic properties of Fe-based superconductors., Comment: 4 pages, 4 figures

Superconducting and normal state transport properties in iron pnictides are sensitive to disorder and impurity scattering. By investigation of Ba(Fe1-xCox)2As2 thin films with varying Co concentration, we demonstrate that in the dirty limit the superconducting dome in the electronic phase diagram of Ba(Fe1-xCox)2As2 shifts towards lower doping concentrations, which differs significantly from observations in single crystals. We show that especially in the underdoped regime superconducting transition temperatures higher than 27 K are possible., Comment: 7 pages, 7 figures

To investigate the transport properties of iron based superconductors, we prepared planar hybrid superconductor-normal metal-superconductor (SNS') thin film junctions with BaFe1.8Co0.2As2 as base electrode. As counter electrode we used a lead indium alloy, while the normal metal layer was formed by thin gold films. Temperature dependent measurements of the electrical conductivity were strongly influenced by the properties of the electrodes. We developed a junction structure that allows us to characterize the electrodes, too, including the behavior of their normal state resistance in order to correct their influences on the conduction spectra. The corrected conductivity of the junction was described within an extended BTK-model and shows a behavior dominated by Andreev reflexion., 9 pages, 6 figures

The angular-dependent critical current density, ${J}_{\text{c}}(\ensuremath{\Theta})$, and the upper critical field, ${H}_{\text{c}2}(\ensuremath{\Theta})$, of epitaxial $\text{Ba}{({\text{Fe}}_{1\ensuremath{-}x}{\text{Co}}_{x})}_{2}{\text{As}}_{2}$ thin films have been investigated. No ${J}_{\text{c}}(\ensuremath{\Theta})$ peaks for $H\ensuremath{\parallel}c$ were observed regardless of temperatures and magnetic fields. In contrast, ${J}_{\text{c}}(\ensuremath{\Theta})$ showed a broad maximum at $\ensuremath{\Theta}=90\ifmmode^\circ\else\textdegree\fi{}$, which arises from intrinsic pinning. All data except at $\ensuremath{\Theta}=90\ifmmode^\circ\else\textdegree\fi{}$ can be scaled by the Blatter plot. ${H}_{\text{c}2}(\ensuremath{\Theta})$ near ${T}_{\text{c}}$ follows the anisotropic Ginzburg-Landau expression. The mass anisotropy increased from 1.5 to 2 with increasing temperature, which is an evidence for multiband superconductivity.