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In this work, we demonstrated that tunable topological domain structures, e.g., center-type domains and skyrmion-like polar bubbles, can be generated at room temperature in high-density epitaxial PbTiO3 nanodots fabricated via the template-assisted tailoring of thin films. These topological domain structures can be manipulated electrically by applying an appropriate bias on the conductive atomic force microscopy tip, allowing for writing, erasing, and rewriting of topological domains into the nanodot. Moreover, ring-shaped conductive channels are observed around the center-type domain states. These findings provide a playground for further exploring their emerging functionalities and application potentials for nanoelectronics. [ABSTRACT FROM AUTHOR]

The deterministic creation and modification of domain walls in ferroelectric films have attracted broad interest due to their unprecedented potential as the active element in non-volatile memory, logic computation and energy-harvesting technologies. However, the correlation between charged and antiphase states, and their hybridization into a single domain wall still remain elusive. Here we demonstrate the facile fabrication of antiphase boundaries in BiFeO3 thin films using a He-ion implantation process. Cross-sectional electron microscopy, spectroscopy and piezoresponse force measurement reveal the creation of a continuous in-plane charged antiphase boundaries around the implanted depth and a variety of atomic bonding configurations at the antiphase interface, showing the atomically sharp 180° polarization reversal across the boundary. Therefore, this work not only inspires a domain-wall fabrication strategy using He-ion implantation, which is compatible with the wafer-scale patterning, but also provides atomic-scale structural insights for its future utilization in domain-wall nanoelectronics. The correlation between charged and antiphase states in BiFeO3 remain elusive. Here, the authors report a fabrication of in-plane charged antiphase boundaries in BiFeO3 thin films, revealing the atomic bonding configurations and atomically sharp 180° polarization reversal of such boundaries. [ABSTRACT FROM AUTHOR]

Dielectric capacitors are widely used in pulsed power electronic devices due to their ultrahigh power densities and extremely fast charge/discharge speed. To achieve enhanced energy storage density, maximum polarization (Pmax) and breakdown strength (Eb) need to be improved simultaneously. However, these two key parameters are inversely correlated. In this study, order–disorder transition induced polar nanoregions have been achieved in PbZrO3 thin films by making use of the low-energy ion implantation, enabling us to overcome the trade-off between high polarizability and breakdown strength, which leads to the tripling of the energy storage density from 20.5 to 62.3 J/cm3 as well as the great enhancement of breakdown strength. This approach could be extended to other dielectric oxides to improve the energy storage performance, providing a new pathway for tailoring the oxide functionalities. [ABSTRACT FROM AUTHOR]

Deterministically controllable multi‐state polarizations in ferroelectric materials are promising for the application of next‐generation non‐volatile multi‐state memory devices. However, the achievement of multi‐state polarizations has been inhibited by the challenge of selective control of switching pathways. Herein, an approach to selectively control 71° ferroelastic and 180° ferroelectric switching paths by combining the out‐of‐plane electric field and in‐plane trailing field in multiferroic BiFeO3 thin films with periodically ordered 71° domain wall is reported. Four‐state polarization states can be deterministically achieved and reversibly controlled through precisely selecting different switching paths. These studies reveal the ability to obtain multiple polarization states for the realization of multi‐state memories and magnetoelectric coupling‐based devices. [ABSTRACT FROM AUTHOR]

By adoption of a high permittivity ZrO2 capping layer (ZOCL), enhanced ferroelectric properties were achieved in the Hf0.5Zr0.5O2 (HZO) thin films. For HZO thin film with 10 Ĺ ZOCL, the 2Pr value can reach as high as ∼43.1 μC cm−2 under a sweep electric field of 3 MV cm−1. In addition, a reduced coercive field of 1.5 MV cm−1 was observed, which is comparable to that of HZO with metallic CL. Furthermore, the homogeneity of ferroelectric orthorhombic phase in HZO films was observed to be clearly increased, as evidenced by nanoscale piezoelectric force microscopy measurements. These results demonstrate that ZOCL is very favorable for high performance ferroelectric HZO films and their future device applications. [ABSTRACT FROM AUTHOR]

We describe the magnetic domain structures and magnetoelectric coupling in self-assembled BiFeO3–CoFe2O4 (BFO–CFO) nanocomposite thin films grown on (110)-LaAlO3 substrates, consisting of CFO slab-shaped crystals (nanofins) embedded in a BFO matrix. The nanofins exhibit magnetic single-domain states with in-plane magnetization along their length due to shape and magnetoelastic anisotropies. The piezoresponse of the BFO matrix is affected by applying an in-plane hard axis magnetic field, indicating magnetoelectric coupling within the multiferroic composite. Conversely, an applied electric field leads to the magnetic reversal of a fraction of the nanofins as the strain transferred from the BFO alters the magnetic anisotropy, enabling switching driven by magnetostatic interactions. [ABSTRACT FROM AUTHOR]

The topological Hall effect (THE) has been discovered in ultrathin SrRuO3 (SRO) films, where the interface between the SRO layer and another oxide layer breaks the inversion symmetry resulting in the appearance of THE. Thus, THE only occurs in ultrathin SRO films of several unit cells. In addition to employing a heterostructure, the inversion symmetry can be broken intrinsically in bulk SRO by introducing defects. In this study, THE is observed in 60‐nm‐thick SRO films, in which defects and lattice distortions are introduced by helium ion irradiation. The irradiated SRO films exhibit a pronounced THE in a wide temperature range from 5 to 80 K. These observations can be attributed to the emergence of Dzyaloshinskii–Moriya interaction as a result of artificial inversion symmetry breaking associated with the lattice defect engineering. The creation and control of the THE in oxide single layers can be realized by ex situ film processing. Therefore, this work provides new insights into the THE and illustrates a promising strategy to design novel spintronic devices. [ABSTRACT FROM AUTHOR]

The ferroelectricity of Hf0.5Zr0.5O2 (HZO) thin films has been usually reported to be induced by metallic capping layer. In this work, we successfully obtained ferroelectricity of HZO thin films induced by ultrathin insulating Al2O3 capping layers. The ferroelectric properties of HZO thin films induced by Al2O3 capping layers with different thickness have been investigated. It was found that the Al2O3(2 nm)/HZO (20 nm) stack shows excellent ferroelectric properties. The Au/Al2O3(2 nm)/HZO (20 nm)/TiN capacitor exhibits a very low leakage current of $\sim {4.2}\times {10}^{\text {-9}}$ A at 4 V and a maximum $2{P}_{r}\approx 32.3~\mu \text{C}$ /cm2 at sweeping voltages between ±8 V. In addition, the capacitor also shows excellent endurance properties up to 108 cycles. Our work demonstrated that dielectric films like Al2O3 can be adopted to be used as capping layer to generate excellent ferroelectric properties of HfO2-based thin films, which will contribute to their future applications in ferroelectric memory and negative capacitance transistors. [ABSTRACT FROM AUTHOR]

We report on the effects of the oxygen vacancy (VO) regarding the microstructure, conductivity, and charge transport mechanisms of epitaxial Ba0.6La0.4TiO3−δ (BLTO) films. The VO concentration can be largely regulated from 21.5% to 37.8% by varying the oxygen pressure (PO2) during film deposition. Resistivity-temperature and Hall effect measurements demonstrate that the BLTO films can be tuned remarkably from an insulator to a semiconductor, and even to a metallic conductor by regulating the VO concentration. The role of VO concentration in the charge transport mechanism is clarified. For films with low VO concentration, the charge transport is dominated by variable range hopping (VRH) at low temperatures, and it shows small polaron (SP) hopping at high temperatures. For films with high VO concentration, the carrier transport remains VRH at low temperatures, while it changes to SP hopping at moderate temperatures, and is dominated by thermal phonon scattering at high temperatures. Furthermore, the lower starting temperature of SP hopping for films with higher VO concentrations indicates that VO favors electron-phonon coupling. Different charge transport mechanisms are assumed to be due to different VO-induced defect energy levels in the BLTO films, which has been verified by their soft x-ray absorption spectroscopy results. [ABSTRACT FROM AUTHOR]

The polarization imprint along with the photovoltaic (PV) effect has been studied in Pt/Pb(Zr0.3Ti0.7)O3/SrRuO3 ferroelectric capacitors. It is shown that the positive DC poling induces the imprint with a downward direction whereas the negative DC poling suppresses the imprint (i.e., rejuvenation). In the polarization up state, the imprinted capacitor exhibits degraded PV properties compared with the rejuvenated one. This may be because the imprint reduces the number of upward domains, thus lowering the driving force for the PV effect. In the polarization down state, however, the rejuvenated capacitor enters the imprinted state spontaneously. This rejuvenation-to-imprint transition can be further aggravated by applying positive voltages and ultraviolet illumination. It is proposed that the domain pinning/depinning, which are associated with the oxygen vacancies and trapped electrons modulated by polarization, voltage, and illumination, may be responsible for the polarization imprint and rejuvenation. Our study therefore sheds light on the correlation between the polarization imprint and the PV effect in the ferroelectrics and also provides some viable suggestions to address the imprint-induced degradation of PV performance. [ABSTRACT FROM AUTHOR]

The recent discovery of efficient charge separation in tetragonal–rhombohedral (T‐R) polymorphic phase boundaries (PPBs) in strained BiFeO3 (BFO) films is of great interest, and also raised a question of whether the PPBs could enhance the performance of BFO‐based planar photodetectors. To address it, we prepare BFO films with thickness ranging from 8 to 90 nm on the LaAlO3 substrates, in which the BFO evolves from a pure T phase (without PPBs) to a T‐R mixed phase (with PPBs) due to the strain relaxation. Then, we comparatively investigate the photoconductive properties of these BFO films with the planar device geometry. It is found that the photoconductance first increases and then decreases with increasing film thickness. Particularly, the 50‐nm film containing the pure T phase without any detectable PPBs exhibits the highest photoconductance. This unexpected observation can be understood by analyzing the effects of increasing film thickness and associated phase evolution on the photoconduction‐related parameters. [ABSTRACT FROM AUTHOR]

Epitaxial ErMnO 3 thin films were grown on Pt-coated Al 2 O 3 substrate by pulsed laser deposition. Their structure, multiferroicity, and ferroelectric domain properties have been comprehensively characterized and studied. The XRD measurement indicated an excellent epitaxy of out-of-plane ErMnO 3 (0001)//Pt(111)//Al 2 O 3 (0001) and in-plane ErMnO 3 [1000]//Pt[11 2 ‾ ]//Al 2 O 3 [11 2 ‾ 0] structures. The as-deposited ErMnO 3 films exhibited spontaneous ferroelectric domains with reversible polarization. A significant remnant polarization of 1.3 μC/cm2 and an active peak at 662 cm−1 in Raman spectra were found, further showing a high quality of the ErMnO 3 thin films. Moreover, the magnetic measurements indicated that the thin film has an excellent anisotropic magnetic property with a Neel temperature at ≈53 K. • The films were grown with highly hexagonal epitaxy with out-of-plane ErMnO 3 (0001)//Pt(111)//Al 2 O 3 (0001) and in-plane ErMnO 3 [1000]//Pt[11 2 ]//Al 2 O 3 [11 2 0]. • The as-deposited ErMnO 3 films clearly exhibited spontaneous ferroelectric domains, which can be polarized reversibly with excellent retention performance. • A remanent polarization value of 1.3 μC/cm2 and a significant Raman-active peak at 662 cm−1 were observed. • The films exhibited a anisotropic magnetic properties with a Neel temperature of 53 K. [ABSTRACT FROM AUTHOR]