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The study of the properties of ferroelectric materials against irradiation has a long history. However, anti−irradiation research on the ferroelectric domain has not been carried out. In this paper, the irradiation of switched domain structure is innovatively proposed. The switched domain of 700 nm lithium niobate (LiNbO3, LN) thin film remains stable after gamma irradiation from 1 krad to 10 Mrad, which was prepared by piezoresponse force microscopy (PFM). In addition, the changing law of domain wall resistivity is explored through different sample voltages, and it is verified that the irradiated domain wall conductivity is still larger than the domain. This domain wall current (DWC) property can be applied to storage, logic, sensing, and other devices. Based on these, a ferroelectric domain irradiation resistance model is established, which explains the reason at an atomic level. The results open a possibility for exploiting ferroelectric materials as the foundation in the application of space and nuclear fields. [ABSTRACT FROM AUTHOR]

Due to their excellent capabilities to generate and sense ultrasound signals in an efficient and well-controlled way at the microscale, piezoelectric micromechanical ultrasonic transducers (PMUTs) are being widely used in specific systems, such as medical imaging, biometric identification, and acoustic wireless communication systems. The ongoing demand for high-performance and adjustable PMUTs has inspired the idea of manipulating PMUTs by voltage. Here, PMUTs based on AlN thin films protected by a SiO2 layer of 200 nm were fabricated using a standard MEMS process with a resonant frequency of 505.94 kHz, a −6 dB bandwidth (BW) of 6.59 kHz, and an electromechanical coupling coefficient of 0.97%. A modification of 4.08 kHz for the resonant frequency and a bandwidth enlargement of 60.2% could be obtained when a DC bias voltage of −30 to 30 V was applied, corresponding to a maximum resonant frequency sensitivity of 83 Hz/V, which was attributed to the stress on the surface of the piezoelectric film induced by the external DC bias. These findings provide the possibility of receiving ultrasonic signals within a wider frequency range, which will play an important role in underwater three-dimensional imaging and nondestructive testing. [ABSTRACT FROM AUTHOR]

Domain engineering plays a pivotal role in the development of ferroelectric non-volatile memory devices. In this work, we mainly focus on the domain kinetic in ion-sliced single crystal LiNbO3 thin films under tip-induced electric fields using piezoresponse force microscope (PFM). Polarization reversal takes place when the electric fields are above threshold value (coercive voltage Vc) of films. Besides, the dependence of domain dynamic on pulse duration and amplitude were investigated in detail, and specific local domain reversal (5 μm) was completed by the optimized poling condition. All the results reveal that tip-induced polarization reversal could be an effective way to domain engineering, which gives much more promising prospects regarding to the high density non-volatile ferroelectric memory devices. [ABSTRACT FROM AUTHOR]

Lithium niobate on insulator (LNOI) is widely used in optical, acoustic, domain wall current (DWC)-based integrated circuits and other domain engineering devices, enabling higher material performance, higher domain integration density and more advanced applications. However, there are hidden dangers of thermal failure in these highly integrated domain engineering devices. Therefore, maintaining thermal stability of domain structures in ferroelectric single-crystal thin films is an important and challenging task. Here, thermally induced structure reconstruction of tailored metastable switched domains was research in a 500 nm thick congruent lithium niobate (CLN) thin film, and a method for enhancing the thermal stability of switched domains was proposed. Piezoresponse force microscopy (PFM) and a polyheater are used to accurately monitor the thermal evolution of switched domains in CLN thin film sample. The results indicate the switched domain structures determine the thermal stability, and the enhanced thermal stability of the switched domains increases from 55 to 85 °C–150 °C. In this contribution, the thermal failure in domain engineering devices can be avoided effectively. The investigation paves the way for the development of domain engineering devices based on lithium niobate (LN) thin films. [ABSTRACT FROM AUTHOR]

Abstract In this study, we investigated the impact of electrodes on the structural, crystal orientation, and electrical characteristics of lead zirconate titanate [Pb(Zr 0.52 Ti 0.48)O 3 , PZT] thin films, that were deposited on Pt, Au, and LaNiO 3 (LNO) electrodes through sol-gel processes. The peak voltage, that is, the voltage corresponding to the maximum switching current point, was developed to depict the novel peak-drift electric characteristics in ferroelectric thin films. It increases in the positive ferroelectric peak voltage, and decreases in the negative peak voltage with an increase in the driving voltage amplitude. Based on space-charge-limited bulk conduction, we evaluated the peak-drift phenomenon, Schottky contact and their influences on the switching current. When polarization orientation is reversed, the Schottky contact disappears at one side of the PZT/electrode, and forms at the other side synchronously. Our results indicate that the formation of a Schottky contact affects the shape of the switching curves, and its disappearance influences the magnitude of the current characteristics. [ABSTRACT FROM AUTHOR]

Polarization fatigue in (Pb 0.97 La 0.02 )(Zr 0.95 Ti 0.05 )O 3 (PLZT) antiferroelectric thin films deposited onto silicon wafers is studied by investigating the effect of the peak/average/root-mean-square cycling voltage through varying the waveform of the electrical excitation. Interestingly, it is found that the fatigue behavior of the film is determined by the root-mean-square voltage of the external driving excitation rather than by the peak or average voltages. Our results can be well explained in the framework of the local phase decomposition model and indicate that the root-mean-square voltage should be considered as the effective driving voltage determining the polarization fatigue in PLZT antiferroelectric films. [ABSTRACT FROM AUTHOR]

• Negative electrocaloric effect (ECE) could be obtained in PLZ thin films within wide temperature range (213–493 K). • Giant negative ECE (Δ T ≈ −13.2 K) and entropy change (Δ S ≈ −11.5 J K−1 kg−1) could be obtained in PLZ thin films. • The combination between negative and positive ECE promotes cooling efficiency during electrical bias processing. Antiferroelectric thin films have exhibited outstanding negative electrocaloric effect (ECE), which are potential candidate regarding to the solid-state refrigeration technology. In this work, Pb 0.97 La 0.02 ZrO 3 (PLZ) antiferroelectric thin films were prepared on LaNiO 3 (LNO)/Pt electrode and LNO electrode by sol-gel method. Giant negative electrocaloric effect (Δ T ~ −13.2 K) can observed in wide temperature range (213–493 K) that deposited on composite electrode, which can be attributed to better electric conductivity of LNO/Pt composite electrode than LNO electrode. In addition to outstanding negative ECE, positive ECE also can be obtained near curie temperature, which is caused by phase transition from ferroelectric (FE) to paraelectric (PE) state. The optimized ECE property contributed to the phase transition and introduction of composite electrode, which pave the giant prospect considering high-efficiency solid-state refrigeration devices through combination of positive and negative ECE. [ABSTRACT FROM AUTHOR]

An integration technology for wafer-level LiNbO3 single-crystal thin film on Si has been achieved. The optimized spin-coating speed of PI (polyimide) adhesive is 3500 rad/min. According to Fourier infrared analysis of the chemical state of the film baked under different conditions, a high-quality PI film that can be used for wafer-level bonding is obtained. A high bonding strength of 11.38 MPa is obtained by a tensile machine. The bonding interface is uniform, completed and non-porous. After the PI adhesive bonding process, the LiNbO3 single-crystal was lapped by chemical mechanical polishing. The thickness of the 100 mm diameter LiNbO3 can be decreased from 500 to 10 μm without generating serious cracks. A defect-free and tight bonding interface was confirmed by scanning electron microscopy. X-ray diffraction results show that the prepared LiNbO3 single-crystal thin film has a highly crystalline quality. Heterogeneous integration of LiNbO3 single-crystal thin film on Si is of great significance to the fabrication of MEMS devices for in-situ measurement of space-sensing signals. [ABSTRACT FROM AUTHOR]

Pb(Zr 0.3 Ti 0.7)O 3 - x mol% Mn (PZTM) (x = 0, 1, 2, and 3) thin films with high density and good crystallinity were obtained using a sol-gel method. Improved crystallization, domain, and ferroelectricity through controlling the lead/oxygen vacancies in Mn-doped lead zirconate titanate (PZT) thin films were investigated. Enhanced ferroelectricity and piezoelectricity were obtained in the 1 mol% Mn-doped PZT thin films. According to the Bragg equation, a small amount of Mn replaces the A-site (Pb2+) to achieve donor doping, which is conducive to the movement of domains and enhances the ferroelectric performance and piezoelectric coefficient. The pinning effect leads to reduced ferroelectric performance, which is caused by oxygen vacancies generated by Mn2+ replacing the B-site (Zr4+/Ti4+) during acceptor doping. The research results show that Mn doping is an effective method for improving the ferroelectric performance of PZT thin films. • The Mn contant dependence of the ferroelectricity and domain switching behavior is thoroughly investigated by PFM. • The Mn first replaces the A-site when the Mn content is small, and replaces the B-site as the Mn content increases. • Enhanced ferroelectricity and piezoelectricity are obtained in the 1mol% Mn-doped PZT thin films. [ABSTRACT FROM AUTHOR]

As a promising functional material, ferroelectric Pb(ZrxTi1−x)O3 (PZT) are widely used in many optical and electronic devices. Remarkably, as the film thickness decreases, the materials' properties deviate gradually from those of solid materials. In this work, multilayered PZT thin films with different thicknesses are fabricated by Sol-Gel technique. The thickness effect on its microstructure, ferroelectric, and optical properties has been studied. It is found that the surface quality and the crystalline structure vary with the film thickness. Moreover, the increasing film thickness results in a significant increase in remnant polarization, due to the interfacial layer effect. Meanwhile, the dielectric loss and tunability are strongly dependent on thickness. In terms of optical properties, the refractive index of PZT films increase with the increasing thickness, and the photorefractive effect are also influenced by the thickness, which could all be related to the film density and photovoltaic effect. Besides, the band gap decreases as the film thickness increases. This work is significant for the application of PZT thin film in optical and optoelectronic devices. [ABSTRACT FROM AUTHOR]

In this study, a critical parameter termed as “effective electric strength” is developed to depict polarization fatigue in antiferroelectric thin films. Specifically, the effect of pulse width, frequency, and magnitude of driving voltage (or field) on polarization fatigue of antiferroelectric (Pb,La)(Zr,Ti)O 3 (PLZT) thin films was investigated in detail. By transforming all the waveforms with different pulse-widths/voltages/frequencies into their effective electric strength, a strong correlation between the effective strength and the degree of polarization fatigue in the PLZT films is revealed. For instance, it was found that appreciable fatigue usually occurs when the effective strength is larger than or equal to the voltage of phase transition from antiferroelectric phase to ferroelectric phase. In addition, it is shown that the films are more prone to fatigue for a lower frequency of the same effective strength. Our findings could be well explained in the framework of the local phase decomposition arising from switching induced charge injection. [ABSTRACT FROM AUTHOR]

Bismuth ferrite (BiFeO 3 , BFO) epitaxial thin films with the thickness of 100 nm have been grown on SrRuO 3 (SRO) coated SrTiO 3 (STO) (111) substrates, forming the structure of Pt/BFO (111)/SRO (111)/STO (111) stacking layers fabricated by pulsed laser deposition (PLD). From electrical measurements of current–voltage curves and polarization–voltage hysteresis loops, it is found that oxygen vacancies depending on different in situ annealing oxygen pressures can influence the electrical characteristics of BFO thin film significantly. High in situ annealing oxygen pressure can reduce the leakage current, brings a steeper current–voltage curve, which arises from the polarization reverse. Meanwhile, the sample under high annealing oxygen pressure has a better rectification, with the On/Off diode currents ratio of around 40:1, which is obviously larger than those under low annealing oxygen pressures. By different conduction mechanism fittings, it is observed that Schottky emission mainly dominates the conduction mechanism at On state, while space-charge limited current emission becomes dominating the leakage at Off state. [ABSTRACT FROM AUTHOR]