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In an effort to explore new electronic devices with multiple functionalities, there are numerous studies of depositing perovskite oxides on flexible substrates to replace rigid silicon‐based wafer in device applications. In this study, the growth of pseudocubic SrRuO3 single‐crystal thin film on a transparent and flexible muscovite is established. The experimental results confirm that the Curie temperature TC and the magnetic properties can be effectively tuned via the mechanical strain due to the facilitation of flexible substrate. It is found that the tensile strain increases while the compressive strain decreases the spontaneous magnetization for the thin film suffering the same ±0.24% strain. Based on the study of critical behavior, the critical exponents β = 0.543(19) and γ = 1.262(1) with the critical temperature TC = 159.04(5) K and TC = 159.10 K, respectively, are obtained by the modified Arrott plot. The set of critical exponents matches well with Widom scaling relation and the scaling equation, indicating these critical exponents are intrinsic for SrRuO3 thin films. Moreover, it is achieved that the SrRuO3 thin films exhibit a long‐range interaction coupled with 3D‐Heisenberg type. [ABSTRACT FROM AUTHOR]

The mechanical stress effect on the crystallization behaviour of Ge2Sb2Te5(GST) thin films is carefully investigated by electrical resistance measurements. It is found that the crystallization temperature of GST films increases as external compressive stress is applied, while the crystallization temperature decreases under tensile stress. We also find that the uneven distribution of extrinsic stress can widen the span of transition temperature. These results clearly demonstrate that mechanical stress plays an important role during the crystallization process of GST films and may further influence the reliability and storage speed of relevant devices. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

Abstract: Pulsed-laser-deposited polycrystalline BaTiO3/SrTiO3 multilayered films on Pt/Ti/SiO2/Si substrates have been fabricated with interfacial modification through lowering the oxygen pressure during the time interval in between two adjacent depositions. It is found that the formation of the heterolayered structure is essential to get the dielectric enhancement. Such heterolayered films have large dielectric constant of 1201 with a loss tangent below 0.1 at 10KHz. This is about two times that of the identically prepared Ba0.5Sr0.5TiO3/Ba0.5Sr0.5TiO3 homolayered and uniform Ba0.5Sr0.5TiO3 films. The enhancement of dielectric properties is attributed to the presence of the interfacial regions with controllable space charges due to the formation of oxygen vacancies at lower oxygen pressure. [Copyright &y& Elsevier]

For achieving more functionalities of perovskite manganese oxides film, an epitaxial La 0.8 Sr 0.2 MnO 3 (LSMO) film was deposited on a flexible substrate (mica) by pulsed laser deposition. The film shows a paramagnetic-ferromagnetic (PM-FM) phase transition at 134 K together with metal-insulator transition (MIT) at 149 K. The measurement of hysteresis loop indicates that the easy-magnetization axis lied in film plane. The transport behavior can be fitted well with the small polaron model, giving out the activation energy E hop = 176.9 meV. Different from the common anisotropic magnetoresistance (AMR) in manganite film, an isotropic magnetoresistance (IMR) effect was observed in LSMO film and the relatively small thickness of LSMO film (∼ 50 nm) is a major reason for it. After the cyclic flexural bending for 1.0 × 104 times, we found the magnetic properties of LSMO film were improved. Micromagnetic detection shows that the activation energy for polaron hopping (E a = 144.7 meV) remarkably decreases by the cyclic flexural bending process. We suggested that the inhomogeneous/incompact part located at the zone of neighbouring domains become uniform and tight after circulating bending, which facilitates the rotation of domains and the polarons hopping so that the magnetic and electronic performance are enhanced. • A flexible pervoskite manganite film has been fabricated by PLD. • The film shows an exchanged polaron interactions in transport behavior. • An isotropic magnetoresistance effect was observed in film. • The magnetization and electronic transport property have been promoted after the cycling bending. [ABSTRACT FROM AUTHOR]