Search

To realize the braiding operations of the Majorana zero modes in the vortex cores of a topological superconductor (TSC), a novel approach is proposed in this letter to replace the common tip (or tip-like) method. Instead of being on top of the TSC thin film, arrays of electrically controllable pinning centers are built beneath the film, hence detection can proceed along with braiding. This does not only increase the braiding rate, but also enables the braiding to be performed in an electrically controllable way and to be integrated into a large scale. Our work paves the way toward large-scale topological quantum computation. [ABSTRACT FROM AUTHOR]

We report high transition temperature superconductivity in one unit-cell (UC) thick FeSe films grown on a Seetched SrTiO3(001) substrate by molecular beam epitaxy (MBE). A superconducting gap as large as 20 meV and the magnetic field induced vortex state revealed by in situ scanning tunneling microscopy (STM) suggest that the superconductivity of the 1 UC FeSe films could occur around 77 K. The control transport measurement shows that the onset superconductivity temperature is well above 50 K. Our work not only demonstrates a powerful way for finding new superconductors and for raising TC, but also provides a well-defined platform for systematic studies of the mechanism of unconventional superconductivity by using different superconducting materials and substrates. [ABSTRACT FROM AUTHOR]

Ultra-thin Pb films with magic thicknesses of 2 monolayer (ML), 4 ML and 6 ML were prepared of atomically flat on the substrate of Si(111)-α-√3 × √3 (or SIC phase) at 145 K. Their surface morphologies and stability were studied by low temperature scanning tunneling microscopy and temperature-dependent angle resolved photoemission spectroscopy. We found that the well ordered SIC interface can lower the diffusion barrier and enhance the interface charge transfer, leading to different critical thickness compared to Pb/Si(111)-7 × 7 grown under same conditions. Enhanced thermal expansion coefficients were also observed in ultra-thin Pb films at low temperature. [ABSTRACT FROM AUTHOR]

Bi2Se3 is a typical three-dimensional topological insulator but always exhibits metallic behavior due to heavy n-type doping. With in situ angle-resolved photoemission spectroscopy, we have systematically studied the doping effects of Sb and Pb on the electronic structure of Bi2Se3 films prepared by molecular beam epitaxy. The surface chemical potential of Bi2Se3 can be tuned by 110 and 145 meV by doping Sb and Pb atoms, respectively. By codoping Pb and Sb, the Fermi level can be shifted from above to below the Dirac point. The underlying mechanism in different doping effects of Sb and Pb is discussed. [ABSTRACT FROM AUTHOR]

We have calculated the energy barriers for an adatom climbing up onto a Pb mesa top either over a facet-facet edge or through a facet-step joint, using a modified embedded atom method. We found that the second process is not only thermodynamically more favorable than the first one but also much faster with a diminishing barrier. Our results provide a plausible explanation for the experimentally observed intriguing growth behavior of a Pb mesa. The underlying mechanisms can be generally applicable to other systems. [ABSTRACT FROM AUTHOR]

Varied temperature photoemission study is performed to investigate the quantum size effects on the thermal property of atomically flat Pb films grown on Si(111). The binding energies of the quantum well states for the films with thicknesses from 10 to 24 ML exhibit a linear increase with increasing temperature from 75 to 270 K. Under free electron approximation, thermal expansion coefficients of the thin films are determined, which manifest a large enhancement and oscillation behavior. The large enhancement is interpreted by a model based on the quantum confinement along the film normal direction. The oscillation is shown to be closely related to the structural instability and is a result of the formation of the quantized electronic states in thin films. [ABSTRACT FROM AUTHOR]

The thickness dependence of the local work function (LWF) and its relationship with the quantum well states (QWSs) are studied. The measured LWF shows an oscillatory behavior between adjacent layers with a period of 2 ML and, in addition, an envelope beating pattern with a period of 9 ML. Scanning tunneling spectroscopy investigations reveal that the oscillatory LWF correlates perfectly with the formation of the QWSs: the higher the occupied QWS is, the smaller the LWF is. Through the role of the LWF, this study establishes the importance of quantum size effects in thin films for surface reactions and catalysis. [ABSTRACT FROM AUTHOR]

[Display omitted] • Monolayer C 60 film is grown on a SrTiO 3 (0 0 1) surface for the first time. • Monolayer C 60 exhibit a short-range ordered molecular arrangement, while multi-layer C 60 show a quasi-(2 × 2) superstructure with a chiral pinwheel motif. • Monolayer C 60 on STO shows the largest HOMO-LUMO gap comparing to those on any other substrates. Ultrathin fullerene (C 60) films on various metal and semiconductor substrates have been intensively studied but not yet on a perovskite oxide substrate. Using scanning tunneling microscopy and spectroscopy, we investigated the molecular arrangement and electronic structure of C 60 ultrathin films grown on a SrTiO 3 (0 0 1) surface. Subject to strong coupling and weak screening from the substrate, the monolayer C 60 exhibit short-range ordered molecular arrangement with disordered molecular orientation and a substantially large highest occupied molecular orbital-lowest unoccupied molecular orbital (HOMO-LUMO) gap (∼4.1 eV). In contrast, C 60 in the 2nd and 3rd layers are self-assembled into hexagon lattices with a quasi-(2 × 2) superstructure resulted from the arrangement of molecular orientations showing a chiral pinwheel structure. The HOMO-LUMO gap of the multi-layer C 60 further expands to ∼ 4.6 eV, very close to that of gas-phase C 60 , indicating a negligible inter-layer screening effect. [ABSTRACT FROM AUTHOR]

We report high transition temperature superconductivity in one unit-cell (UC) thick FeSe films grown on a Seetched SrTiO3(001) substrate by molecular beam epitaxy (MBE). A superconducting gap as large as 20 meV and the magnetic field induced vortex state revealed by in situ scanning tunneling microscopy (STM) suggest that the superconductivity of the 1 UC FeSe films could occur around 77 K. The control transport measurement shows that the onset superconductivity temperature is well above 50 K. Our work not only demonstrates a powerful way for finding new superconductors and for raising TC, but also provides a well-defined platform for systematic studies of the mechanism of unconventional superconductivity by using different superconducting materials and substrates. [ABSTRACT FROM AUTHOR]