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Vanadium oxide (VO2) thin films have drawn significant research and development interest in recent years because of their intriguing physical origin and wide range of functionalities useful for many potential applications, including infrared imaging, smart windows, and energy and information technologies. However, the growth of highly epitaxial films of VO2, with a sharp and distinct controllable transition, has remained a challenge. Here, we report the structural and electronic properties of high quality and reproducible epitaxial thin films of VO2, grown on c-axis oriented sapphire substrates using pulsed laser deposition at different deposition pressures and temperatures, followed by various annealing schedules. Our results demonstrate that the annealing of epitaxial VO2 films significantly enhances the Semiconductor to Metal Transition (SMT) to that of bulk VO2 transition. The effect of oxygen partial pressure during the growth of VO2 films creates a significant modulation of the SMT from around room temperature to as high as the theoretical value of 68 °C. We obtained a bulk order transition ≥104 while reducing the transition temperature close to 60 °C, which is comparatively less than the theoretical value of 68 °C, demonstrating a clear and drastic improvement in the SMT switching characteristics. The results reported here will open the door to fundamental studies of VO2, along with tuning of the transition temperatures for potential applications for multifunctional devices. [ABSTRACT FROM AUTHOR]

With a metal to insulator transition (MIT) temperature of ∼68 °C to 70 °C, which is close to room temperature (RT), vanadium oxide (VO2) has piqued interest in research communities for several applications, such as Mott-transistors and smart windows. This unique characteristic and multi-faceted application of VO2 makes it ideal for several fields, from consumer electronics to defense applications. However, despite this advantage over several other materials, VO2 has some serious shortcomings. In this paper, we attempt to address these issues, such as higher than RT transition temperature, metastability of the material, and its need for a separate heater layer to trigger the MIT, by using a stoichiometrically downgraded multi-layered structure that can both demonstrate the MIT property and serve as an embedded heater layer. This eliminates the need to use a system with a different material such as aluminum-doped zinc oxide. By using the multi-layered structure, we were able to achieve a transition temperature of ∼48 °C, which is ∼22 °C lower than the transition temperature of bulk VO2 films. We also noted a reduction of over 50% in transmission in the infra-red region by application of less than 15 V, as well as an enhancement of ∼10% in the visible region transmission beyond the MIT temperature, which demonstrates the potential of this structure to be used as an energy-efficient smart window device. [ABSTRACT FROM AUTHOR]

Combining two materials in a nanoscale level can create a composite with new functionalities and improvements in their physical and chemical properties. Here we present a high-throughput approach to produce a nanocomposite consisting of metal nanoparticles and semiconductor oxide nanostructures. Volmer-Weber growth, though unfavorable for thin films, promotes nucleation of dense and isolated metal nanoparticles on crystalline oxide nanostructures, resulting in new material properties. We demonstrate such a growth of Au nanoparticles on SnO2 nanostructures and a remarkable sensitivity of the nanocomposite for detecting traces of analytes in surface enhanced Raman spectroscopy. Au nanoparticles with tunable size enable us to modify surface wettability and convert hydrophilic oxide surfaces into super-hydrophobic with contact angles over 150°. We also find that charge injection through electron beam exposure shows the same effect as photo-induced charge separation, providing an extra Raman enhancement up to an order of magnitude. [ABSTRACT FROM AUTHOR]

The metal-to-insulator transition (MIT) closest to room temperature of 68–70 °C as shown by vanadium oxide (VO2), compared with other transition metal oxides, makes it a potential candidate for smart window coating. We have successfully fabricated a potential smart window device after the optimum design of a multilayered thin film structure made out of transparent conducting oxide (aluminum doped zinc oxide) and pure VO2 using pulsed laser deposition technique. This comprehensive study is based on two different configurations for multi-layered structure approach, with the intention to reduce the transition temperature, as well as to maintain the MIT properties that would strengthen the potential of the structure to be used for a smart window device. By creating a multi-layered structure, we were able to create a low powered device that can operate less than 15 V that leads to significant decline in the infrared transmission by a magnitude of over 40% and provided sufficient heat to trigger the MIT at a temperature around 60 °C, which is almost 10 °C lower than its bulk counterpart. This finding would positively impact the research on VO2 thin films, not only as smart windows but also for numerous other applications like bolometers, infrared detectors, Mott transistors and many more. [ABSTRACT FROM AUTHOR]

Large area highly crystalline MoS2 and WS2 thin films were successfully grown on different substrates using radio-frequency magnetron sputtering technique. Structural, morphological and thermoelectric transport properties of MoS2, and WS2 thin films have been investigated systematically to fabricate high-efficient thermal energy harvesting devices. X-ray diffraction data revealed that crystallites of MoS2 and WS2 films are highly oriented in 002 plane with uniform grain size distribution confirmed through atomic force microscopy study. Surface roughness increases with substrate temperature and it plays a big role in electron and phonon scattering. Interestingly, MoS2 films also display low thermal conductivity at room temperature and strongly favors achievement of higher thermoelectric figure of merit value of up to 1.98. Raman spectroscopy data shows two distinct MoS2 vibrational modes at 380 cm−1 for E12g and 410 cm−1 for A1g. Thermoelectric transport studies further demonstrated that MoS2 films show p-type thermoelectric characteristics, while WS2 is an n-type material. We demonstrated high efficient pn-junction thermoelectric generator device for waste heat recovery and cooling applications. [ABSTRACT FROM AUTHOR]

We report the electrothermal properties of AAA trilayer on polyethylene terephthalate substrate which allowed the development of low-cost high-performance transparent thin-film flexible heater (TTFFH) using RF magnetron sputtering. The structural, electrical, and optical properties of the AAA trilayer were investigated at different thickness of the Ag interlayer. The AAA trilayer-based TTFFH yielded saturation temperatures beyond 100 °C at 10 V at optimized Ag interlayer thickness of 5 nm. The time-dependent temperature profile along with its highly stable and reversible thermal behavior was studied. Most importantly, the AAA trilayer-based TTFFH provides a high-performance alternative to the conventional and expensive ITO electrodes at a much lower cost. [ABSTRACT FROM AUTHOR]

Comprehensive and systematic electrical studies were performed on fabrication of high quality SiO2 thin films MOS capacitor using the robust, novel, and simple atomic layer deposition (ALD) technique using highly reactive ozone and tris (dimethylamino) silane (TDMAS) precursors. Ideal capacitance-voltage curve exhibits a very small frequency dispersion and hysteresis behavior of the SiO2 MOS capacitor grown at 1s TDMAS pulse, suggesting excellent interfacial quality and purity of the film as probed using x-ray photoelectron studies. The flat-band voltage of the device shifted from negative toward positive voltage axis with increase of TDMAS pulses from 0.2 to 2 s. Based on an equivalent oxide thickness point of view, all SiO2 films have gate leakage current density of (5.18 × 10-8 A/cm²) as well as high dielectric break down fields of more than (~10 MV/cm), which is better and comparable to that of thermally grown SiO2 at temperatures above 800°C. These appealing electrical properties of ALD grown SiO2 thin films enable its potential applications such as high-quality gate insulators for thin film MOS transistors, as well as insulators for sensor and nanostructures on nonsilicon substrates. [ABSTRACT FROM AUTHOR]

Artificial and engineered nanostructures expand the degrees of freedom with which one can manipulate the intricate interplay of light and matter. Certain nanostructural arrangements in the excited state enable the efficient electromagnetic coupling of propagating light with localized fields. Here, we demonstrate that light transmitted through a nanostructured metal thin film without any apertures can be significantly enhanced. Distinct asymmetric Fano resonances are observed in the zero-order transmission spectra using an incoherent light source. The transmission efficiency surpasses that of a metal thin film with the same area and thickness at the resonance maxima. The transmission minima and the sharp resonance maxima bear a strong resemblance to the extraordinary optical transmission observed in sub-wavelength nanohole array structures The resonance wavelength closely matches the nanostructural periodicity. The sensitivity of the resonances to the surrounding medium and the transmission efficiency demonstrate the potential for use in energy harvesting, imaging, optical processing and sensing applications. [ABSTRACT FROM AUTHOR]