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2D tin chalcogenides are promising materials for thin-film solar cells due to their excellent characteristics. SnS1−xSex alloy films have garnered attention from researchers over the last few decades due to their tunable physical features. Here, we report the successful preparation of SnS1−xSex powder using a temperature-assisted mechanochemical process and their subsequent deposition on glass substrates via thermal evaporation. X-ray diffraction (XRD) and Raman spectroscopy were used to extensively analyse SnS1−xSex thin films, elucidating their structural characteristics. The presence of a ternary alloy has been verified by both energy dispersive X-ray spectroscopy (EDAX) and X-ray photoelectron spectroscopy (XPS). The absorption spectrum shows that TSSe thin films have great potential for absorbing a wide range of visible light. Hall measurement revealed that n-type TSSe thin films have shown great promise with the highest hall mobility of up to 16.7 cm2 V−1 s−1. Our study demonstrates that TSSe has excellent potential as a 2D material for cutting-edge photovoltaic applications. [ABSTRACT FROM AUTHOR]

Alloy engineering are efficient methods to improve the physical properties of two‐dimensional (2D) material‐based photovoltaic application. Tin chalcogenide belonging to layered structured semiconducting family has been a significant compound due to its outstanding characteristics. Tin selenide (SnSe) is known as promising layered compound to develop 2D materials for optoelectronic devices. The current study focused onto the effect of tin sulfoselenide (SnSSe) alloy engineering on the structural, morphological, optical, and electrical characteristics. X‐ray Diffraction (XRD) confirmed that SnSSe and SnSe are exist in the orthorhombic crystal structure phase without other secondary phases, with the preferred high‐intensity peak along (111) oriented plane. Raman spectra was reported to give information about the vibrational characteristics of the compounds. The presence of Sulfur ion in SnSSe was further confirmed by Energy Dispersive X‐ray Spectroscopy (EDAX) and X‐ray Photoelectron Spectroscopy (XPS) analysis. Bandgap energy (Eg) has been analysed by Tauc's plot and the derivative of transmittance spectra. According to both sets of analyses, the bandgap of the SnSSe thin film is considerably smaller than that of the SnSe thin film. Hall measurements indicated that SnSSe exhibits the higher hole mobility. The present work's results offer useful insight into the prospective device applications of two‐dimensional alloy materials. [ABSTRACT FROM AUTHOR]

In present work, SnSe 1-x Te x thin films with varying Te concentrations were deposited on glass substrate through thermal evaporation technique. SnSe 1-x Te x thin films were characterized using X-ray diffraction (XRD), atomic force microcopy (AFM), X-ray photoelectron spectroscopy (XPS), UV–Vis NIR spectroscopy and room-temperature hall measurements technique. XRD patterns revealed that all the samples had a polycrystalline orthorhombic structure. Additionally, a low level of Te impurity improved the crystalline quality of the SnSe thin films. AFM images showed a noticeable alteration in the surface structure of the SnSe thin films caused by Te doping. UV–Vis NIR spectroscopy was employed to assess the optical characteristics of SnSe 1-x Te x thin films, revealing a variation in the optical band gap energy (E g) between 1.75 and 1.89 eV, attributed to Te doping. The Hall effect measurement revealed n-type conductivity, and the carrier concentration decreased as the Te dopant concentration increased, corresponding to a decrease in antisite SnSe defects. The experimental findings suggest that adding a moderate amount of Te is a beneficial method for enhancing the optical and electrical properties of SnSe films. Furthermore, the Schottky device parameters of the Ag/SnSe 1-x Te x /Al:ZnO structure were established by analyzing the temperature-dependent Current-Voltage (I–V-T) characteristics through the thermionic emission current transport mechanism. • Undoped and Te-doped n-SnSe thin film were deposited by thermal evaporation technique. • XPS confirmed the formation of Single phase SnSe after doping at 2 % Te atom. • Optical absorption spectrum is influenced by Te-dopant concentration. • Mobility tremendously enhanced upto 213 cm2 V−1s−1 revealed by hall measurement. • The Schottky device parameters of the Ag/SnSe 1-x Te x /Al:ZnO structure has also been investigated. [ABSTRACT FROM AUTHOR]

In the present investigation, ZnO thin films were deposited on an ITO coated glass substrate using the Pulsed Laser Deposition technique at different annealing temperatures, from 150 to 300 °C. Investigation showed the post-annealing process affected the topological structure and optical properties of ZnO thin films, which were investigated by Atomic Force Microscopy (AFM), and UV–Vis spectroscopies respectively. Temperature-dependent Raman spectroscopy and X-ray Diffraction (XRD) were used to confirm the presence of ZnO material. Surface roughness was analyzed by the AFM technique which indicates that it is slightly affected by annealing temperature. Optical transmittance data showed high transmittance about ∼ 70% within the visible region. The direct energy bandgap, complex refractive index, the complex dielectric constant was calculated through transmittance and absorption data. The optical band gap was 3.143 eV, firstly dropped to 3.112 eV and then increased to 3.171 eV with increasing the annealing temperatures. The surface roughness of ZnO thin films was associated with variations in optical band gap, indicating that the post-growth annealing method has a substantial impact. [ABSTRACT FROM AUTHOR]

Tin monosulfide (SnS) is promising candidate as a photovoltaic material due to its large tuneable physical properties, which can be achieved by altering the synthesis conditions. Synthesis of pure phase SnS with high crystallinity is really a challenging issue for researchers. The present work mainly focuses on synthesis SnS nanoparticles using a direct reaction approach and manipulate their properties by altering S content. The formation of orthorhombic α-SnS nanoparticles with preferential orientations along the (400) direction has been confirmed by X-ray Diffraction (XRD). Energy Dispersive X-ray analysis (EDX) is used to investigate the elemental composition of all synthesised SnS nanoparticles. SnS nanoparticles of different compositions are deposited on glass substrate using thermal evaporation. The crystal structures of deposited SnS thin films are analysed by XRD. Fourier Transform Infrared (FTIR) spectra indicate the Sn–S bond stretching around 580 - 950 cm−1 including a broad peak around 950 - 1450 cm−1. The Raman spectrum of all SnS thin films shows peaks at 136 ± 2, 190 ± 2, and 231 ± 2 cm−1 assigned as A g mode of SnS. The presence of excess sulphur impacts on the surface morphology of the SnS thin film and is noticeable in FESEM images. UV–Vis–NIR absorbance spectrum revealed that the visible-light absorption of the SnS thin film was significantly high (α ∼105 cm−1). The calculated direct bandgaps of SnS thin films are found to increase (1.63–2.43 eV) with increasing sulphur ratio. • Attempt a new approach to the synthesis of SnS nanoparticles via a direct reaction method. • Strong influence of Sulphur (S) content is noticeable in structural, morphological and vibrational properties in thin film. • The direct optical bandgap of SnS thin films is found to blue shift with increasing S content. • All the term are neccessary to represent the property of thin film. [ABSTRACT FROM AUTHOR]