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Abstract: Lithium fluoride, LiF, is a well-known dosimeter material. In thin films the direct use of optical absorption spectra to individuate the stable formation of different kinds of point defects is often precluded by the presence of interference fringes due to the refractive index difference between film and substrate. Photoluminescence measurements are more sensitive. Recently a very effective investigation method is developing: it is often called combined excitation–emission spectroscopy (CEES) in the literature. In this work we present the basic characteristics of this technique and the first results of the investigation of polycrystalline LiF films grown by thermal evaporation on fused silica substrates and gamma irradiated at several doses up to 106 Gy in air. [Copyright &y& Elsevier]

Colour centres (CCs) in lithium fluoride (LiF) are well known for application in tuneable lasers and dosimeters. The visible photoluminescence (PL) of radiation-induced, broad-band light-emitting aggregate CCs in LiF crystals and films has been proposed for high spatial resolution X-ray imaging; use of LiF-based detectors has been recently successfully extended to advanced diagnostics of low-energy proton beams. After exposure, transversal dose mapping was obtained on LiF films by acquiring the visible PL image of the irradiated spots in a fluorescence microscope under blue-light pumping. Irradiation of thermally evaporated LiF thin films with a proton beam of 3 MeV nominal energy, produced by a linear accelerator, in the fluence range of 10 11 –10 15 protons/cm 2 , induces the formation of stable CCs, mainly the primary F centre and the aggregate F 2 and F 3 + defects. A comparison with irradiations performed at 7 MeV shows that the spectrally integrated PL as a function of the absorbed dose is independent on the selected beam energy, at least as far as typical LiF film thicknesses are concerned. The PL behaviour vs. dose can be described by a linear growth which covers up to three order of magnitude, followed by saturation at high values (> ≈10 5 Gy). The spectral contributions of F 2 and F 3 + CCs to the detected PL, in the red and in the green respectively, under laser pumping were carefully analysed in order to investigate behaviour differences of these defects at high doses. [ABSTRACT FROM AUTHOR]

Proton beams of 7 MeV energy, produced by a linear accelerator, were used to irradiate LiF crystals and thin films thermally evaporated on glass substrates in the dose range from 10 3 to 4 × 10 6 Gy, inducing the formation of stable photoluminescent colour centres (mainly F 2 and F 3 + ), emitting in the visible spectral range. Using a conventional fluorescence microscope, the transversal proton beam intensity was mapped by acquiring the photoluminescence image of the irradiated spots. Image analysis allowed measuring the integrated photoluminescence intensity as a function of the irradiation dose: a linear optical response was obtained up to different maximum dose values, after which a quenching was observed, depending on the nature of the samples (crystals or films). The colour centres formation was investigated by optical absorption spectroscopy at room temperature and the Principal Component Analysis was applied to the absorption spectra of irradiated LiF crystals. In samples irradiated at highest doses, it allowed clearly identifying the formation of more complex aggregate defects, which appears strictly related to the observed photoluminescence quenching effect. [ABSTRACT FROM AUTHOR]

Luminescence properties of point defects in insulating materials are successfully used for solid state light sources and radiation detectors. Among them, colour centres in lithium fluoride, LiF, are well known for their application in tuneable lasers and dosimeters. Broad-band light-emitting F 2 and F 3 + electronic defects, stable at room temperature, are produced in LiF crystals and films by different kinds of radiation. Under blue optical pumping in their overlapping absorption bands, the efficient photoluminescence spans over the green–red visible spectral range. Novel LiF thin-film radiation imaging detectors based on the exploitation of the peculiar spectral characteristics of F 2 and F 3 + defects and of the optical properties and radiation sensitivity of the LiF material have been proposed and successfully tested for extreme ultraviolet radiation, soft and hard X-ray imaging, including micro-radiography of biological objects, even for in vivo samples. After exposure to X-rays, the latent images stored in the LiF thin layers by local formation of active defects are read with conventional and advanced optical fluorescence microscopes. Among the main advantages of the LiF thin-film imaging detectors, there are intrinsic very high spatial resolution, large field of view and wide dynamic range. Moreover, these solid state radiation detectors are easy to handle, as insensitive to ambient light, and no development process is needed. Recently their use has been extended to proton beam advanced diagnostics. In this paper, a short review of their properties, results and applications in X-ray biological imaging and proton dose-mapping is presented, underlying the great versatility and potentialities offered by LiF thin films, whose photoluminescence response can be improved through the choice of suitable substrates and growth conditions. [ABSTRACT FROM AUTHOR]

Proton beams of 3 and 7 MeV energies, produced by a linear accelerator, were used to irradiate lithium fluoride crystals and thermally evaporated LiF thin films in the fluence range of 10 11 –10 15 protons/cm 2 . The irradiation induces the formation of stable colour centres, mainly the primary F centre and the aggregate F 2 and F 3 + defects. By optical pumping in the blue spectral region, the F 2 and F 3 + centres emit broad photoluminescence bands in the visible spectral range. By conventional fluorescence microscopy, the integrated photoluminescence intensity was carefully measured in LiF crystals and thin films as a function of the irradiation fluence: a linear optical response was obtained in a large range of fluence, which is dependent on the used LiF samples and the selected beam energy. It was possible to record the transversal proton beam intensity profile by acquiring the photoluminescence image of the irradiated spots on LiF films by a standard optical microscope. Using LiF films grown on silicon substrates irradiated in a particular geometry, the same optical reading microscopy technique allowed one to measure the distribution of colour centres photoluminescence along the depth and direct imaging the Bragg peak position, which gives a rough estimation of the initial proton beam energy. [ABSTRACT FROM AUTHOR]

Abstract: Lithium fluoride is a well-known dosimeter material and it is currently under investigation also for high-resolution radiation imaging detectors based on colour centre photoluminescence. In order to extend their applications, proton beams of 3MeV energy, produced by a linear accelerator, were used to irradiate LiF crystals and thin films in the fluence range of 1010–1015 protons/cm2. The irradiation induces the formation of colour centres, mainly the primary F centre and the aggregate F2 and defects, which are stable at room temperature. By optical pumping in the blue spectral region, the F2 and centres emit broad photoluminescence bands in the visible spectral range. By conventional fluorescence microscopy, the integrated photoluminescence intensity was carefully measured in LiF crystals and thin films as a function of the irradiation fluence: a linear optical response was obtained in a large range of fluence, which is dependent on the used LiF samples. Colour centres concentrations were estimated in LiF crystals by optical absorption spectroscopy. It was possible to record the transversal proton beam intensity profile by acquiring the photoluminescence image of the irradiated spots on LiF films. [Copyright &y& Elsevier]

Abstract: Novel X-ray imaging detectors based on photoluminescence of colour centres in lithium fluoride (LiF) have been proposed and tested for extreme ultraviolet, soft and hard X-rays up to 10keV. For the first time we present the optical characterisation of LiF crystals and thin films irradiated at the TOPO–TOMO beamline of synchroton light source Anka (Karlsruhe, Germany) in the energy range 6–40keV for different exposure times. Absorption and photoluminescence spectra were analysed to study the optical response of the LiF-based detectors. High resolved X-ray imaging of commercial test patterns has been obtained on LiF crystals and films by optical readout with a confocal laser scanning fluorescence microscope. [Copyright &y& Elsevier]

Abstract: Among insulating materials containing point defects, lithium fluoride (LiF) is a radiation-sensitive alkali halide well known in dosimetry and as active medium in light-emitting devices and lasers. Electronic point defects can be produced in LiF crystals and films by different kinds of radiation. Some of these electronic defects, known as colour centres, are optically active, with broad absorption and emission bands in the visible spectral range. Novel thin-film imaging detectors for extreme ultraviolet and soft X-rays, based on photoluminescence from aggregated colour centres in LiF, have been proposed and are currently under development, successfully extending their operation also in the hard X-ray region, up to 10keV. Among the main peculiarities of LiF-based detectors, there are intrinsic high spatial resolution, in principle limited only by the point defect size, large field of view and wide dynamic range. These imaging detectors feature great versatility, as they can be grown in the form of thin films on different substrates by well-assessed physical deposition techniques. We present the promising results obtained using different X-ray laser–plasma sources in the field of nanotechnology, biology and in material science in view of future perspectives of research and development. [ABSTRACT FROM AUTHOR]

Abstract: We report about the light-emitting properties of colour centres in lithium fluoride thin films and crystals treated with low-penetrating extreme-ultraviolet radiation and soft X-rays. Experimental fluorescence-imaging results show that, under the same irradiation conditions, stronger photoluminescence, up to a factor eight, is released by colour centres in a film thermally grown on silicon substrate than in a crystal. By using a classical-electromagnetism model, we take into account the role of the silicon substrate in the enhancement of spontaneous emission over a broad spectral range to analyze such behaviour. [ABSTRACT FROM AUTHOR]