Search

SrIrO3 (SIO) thin films were epitaxially grown on (001)-oriented 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) single-crystal substrates. Upon applying electric fields to the piezoelectric PMN-PT along the thickness direction, the electronic transport properties of SIO films can be in situ tuned and modulated by non-180° ferroelectric domain rotation-induced strain, piezoelectric strain, and rhombohedral-to-tetragonal structural phase transition-induced strain in the PMN-PT layer, respectively. Moreover, the weak negative magnetoresistance (MR) of the 60-nm SIO films could be modified by applying an electric field to the PMN-PT layer. At T = 2 K, upon the application of E = 4 kV/cm to the PMN-PT, MR at H = 9 T is reduced by 14.2% as compared to that under zero electric field, indicating in-plane compressive strain-induced suppression of the influence of quantum corrections to the conductivity in the SIO film. These results demonstrate that the electric-field controllable lattice strain is a simple approach to get insight into the strain-property relationships of 5d iridate thin films. [ABSTRACT FROM AUTHOR]

Transparent conductive oxides have attracted extensive attentions as a promising candidate for next-generation display materials. As a substitute for indium tin oxide, BaSnO3-based materials have been widely investigated with the improvement of electrical resistivity and optical transparency. Here, the effects of diverse rare-earth ions (R = La, Nd, Sm, Er) doping on the structural, electrical, and optical properties of RxBa1−xSnO3 films are systematically studied. The rare-earth ion doping improves the crystallinity of epitaxial RxBa1−xSnO3 films. And a rule for electrical performance optimization is revealed that the resistivity and metal-semiconductor transition temperature increase with increased atomic number of rare-earth ions. Further optimized composition for LaxBa1−xSnO3 is realized at x = 5% with the minimum resistivity of 0.31 mΩ cm. Moreover, all RxBa1−xSnO3 films exhibit a high transparency of greater than 90% in the visible region. This work demonstrates that among these four rare-earth ion doping, La-doping is the most effective approach to optimize the comprehensive properties of BaSnO3-based transparent conductive films. [ABSTRACT FROM AUTHOR]

Bi thin films were grown on (111)-oriented 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (PMN–PT) single-crystal substrates by pulsed laser deposition. Resistance of Bi/PMN–PT could be modulated by asymmetrical bipolar electric field in a reversible and nonvolatile manner at 300 K. By tuning asymmetrical bipolar electric field, different nonvolatile strain states could be generated in PMN–PT and transferred to Bi thin film, which leads to different nonvolatile resistance states. Furthermore, different resistance states of the Bi films could be achieved under different magnetic field at 300 K. The ferroelastic strain- and magnetic-field-modulated resistive properties in Bi/PMN–PT suggest a promising approach for multistate resistive memories. [ABSTRACT FROM AUTHOR]

Superconducting thin films of FeSe 0.5 Te 0.5 are epitaxially grown on piezoelectric 0.71Pb(Mg 1/3 Nb 1/2 )O 3 -0.29PbTiO 3 (PMN-PT) single-crystal substrates. Upon the application of an electric field to the PMN-PT along the thickness direction the superconducting properties of the FeSe 0.5 Te 0.5 films, such as the normal-state resistance, superconducting phase transition temperature, upper critical field, critical current, and coherence length are in situ modified via the ferroelectric polarization rotation, converse piezoelectric effect, and structural phase transition of the PMN-PT. Our findings demonstrate that the combination of superconducting thin films with piezoelectrically active PMN-PT offers a promising approach for exploring the intrinsic lattice strain effects of iron-based superconducting systems. [ABSTRACT FROM AUTHOR]

• The BFGMO–BTO film is successfully prepared by pulsed laser deposition method. • The structure and magnetic properties highly depend on the oxygen pressure. • The electric field used to switch ferroelectric domains increases with the film thickness. • The work contributes to finding a route to achieve more excellent room-temperature multiferroic films. 0.55BiFe 0.95 Ga 0.03 Mn 0.02 O 3 –0.45BaTiO 3 (BFGMO–BTO) thin films have been epitaxially grown on (0 0 1)-oriented Nb-doped SrTiO 3 (NSTO) single-crystal substrates by the pulsed laser deposition. X-ray diffraction, selected area electron diffraction, magnetic hysteresis loop, and piezoresponse force microscopy results show that the structural and magnetic properties of the BFGMO–BTO epitaxial films can be progressively tuned by the oxygen pressure (P O 2 ) during film deposition. The films prepared at P O 2 = 5 Pa phase separated into BFGMO and BTO phases, however, with increasing P O 2 to 20 Pa the films evolve from two phases to single phase with the best crystalline quality, largest saturation magnetization, lowest coercive field and relatively easy-switchable ferroelectric domains. [ABSTRACT FROM AUTHOR]

SrIrO3 (SIO) thin films were epitaxially grown on (001)-oriented 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) single-crystal substrates. Upon applying electric fields to the piezoelectric PMN-PT along the thickness direction, the electronic transport properties of SIO films can be in situ tuned and modulated by non-180° ferroelectric domain rotation-induced strain, piezoelectric strain, and rhombohedral-to-tetragonal structural phase transition-induced strain in the PMN-PT layer, respectively. Moreover, the weak negative magnetoresistance (MR) of the 60-nm SIO films could be modified by applying an electric field to the PMN-PT layer. At T = 2 K, upon the application of E = 4 kV/cm to the PMN-PT, MR at H = 9 T is reduced by 14.2% as compared to that under zero electric field, indicating in-plane compressive strain-induced suppression of the influence of quantum corrections to the conductivity in the SIO film. These results demonstrate that the electric-field controllable lattice strain is a simple approach to get insight into the strain-property relationships of 5d iridate thin films. [ABSTRACT FROM AUTHOR]