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[Display omitted] • CH 3 NH 3 Pb(I 1-x Br x) 3 perovskite thin films are successfully applied as copper-free back contact layers for CdTe solar cells. • The facile deposition process of back contact layers. • The uniformity of CdTe solar cell is improved after applying CH 3 NH 3 Pb(I 1-x Br x) 3 back contact layers. • CdTe solar cell with a CH 3 NH 3 Pb(I 1-x Br x) 3 back contact layer exhibits good stability. In this study, bromide-iodide lead perovskite (CH 3 NH 3 Pb(I 1−x Br x) 3) thin films were fabricated and applied as copper-free back contact layers for CdTe solar cells. The results reveal that the open-circuit voltage (V oc) and fill factor (FF) of the CdTe solar cells are greatly enhanced by the utilization of perovskite back contact layers. This is mainly due to the evidently reduced charge transportation barrier at the back contact, which is verified by temperature-dependent current–voltage (J-V-T) and apparent quantum efficiency (AQE) measurements. Specifically, after the application of perovskite back contact layer, the best-performing device shows 15.80% improvement in efficiency (from 10.82 to 12.53%), with V oc and FF increasing by 3.94% and 6.91%, respectively. Besides, the overall uniformity of the solar cells is also improved by the perovskite back contact, suggested by laser beam induced current (LBIC) results. Further simulation results confirm the experimental results and clarify the optimized cell performance by perovskite back contact layer in terms of both energy band alignment and charge carriers' recombination. In addition, in the simulation section, we have also investigated the effect of the bandgap, thickness and doping level of perovskite and the doping level of CdTe on the cell performances. The experiments and the numerical simulation reported in this work suggest perovskite a potential copper-free back contact layer for the fabrication of efficient CdTe solar cells. [ABSTRACT FROM AUTHOR]

Flexible thin-film solar cells are important for their advantages in many aspects, and aluminum antimonide (AlSb) can be used as an absorbent layer in thin-film solar cells. However, its deliquescence limits its practical use. In this work, AlSb films were prepared by radio frequency (RF) magnetron sputtering on stainless steel flexible substrates. A flexible conformal coating membrane using acrylic resin was deposited on the AlSb films and its deliquescence prevention effect was verified. It was found that after conformal coating treatment, the deliquescence of the AlSb film was effectively stopped. The bare AlSb films and the Ni/AlSb/acrylic resin/Ni multilayer films were exposed to ambient air at the same time under the same conditions for lengths of time ranging from 1 min to 60 days. After 60 days, the bare AlSb film experienced significant deliquescence, such that the film was completely destroyed. However, the Ni/AlSb/acrylic resin/Ni multilayer films did not exhibit deliquescence. [ABSTRACT FROM AUTHOR]

Sb 2 Se 3 is a promising absorber for thin film solar cells due to its nontoxicity, low cost, earth abundance and excellent photovoltaic properties. However, few reports focus on Sb 2 Se 3 thin films prepared by pulsed laser deposition (PLD). Here we successfully deposited Sb 2 Se 3 thin films at different substrate temperatures by PLD. Structural, morphological, compositional, optical and electrical properties of Sb 2 Se 3 thin films were characterized. Results show that Sb 2 Se 3 thin films exhibit orthorhombic phase with good crystallinity and higher substrate temperature can distinctly improve crystal quality. Optical band gap is about 1.30 eV, 1.20 eV, 1.18 eV and 1.16 eV for Sb 2 Se 3 thin films deposited at 370 °C, 390 °C, 410 °C and 430 °C, respectively. In addition, the atomic ratio of selenium to antimony is 3/2, entirely consistent with the stoichiometry ratio of Sb 2 Se 3. Image 1 • Sb 2 Se 3 thin films were prepared on glass at different substrate temperatures by KrF PLD. • The atomic ratio of selenium to antimony was 3/2, entirely consistent with the stoichiometry ratio of Sb 2 Se 3. • Optical band gap was estimated to be 1.30 eV, 1.20 eV, 1.18 eV and 1.16 eV for Sb 2 Se 3 thin films deposited at 370 °C, 390 °C, 410 °C and 430 °C respectively. • High substrate temperature improved crystal quality. [ABSTRACT FROM AUTHOR]

Sb 2 Se 3 , an emerging promising binary compound semiconductor, was prepared at different substrate temperatures by pulsed laser deposition for thin film solar cells for the first time. In this work, CdS and Sb 2 Se 3 films were subsequently deposited by pulsed laser deposition to simplify the process. Film properties and device performance, closely related to the substrate temperature, were characterized by thermal gravimetric analysis, X-ray diffraction, UV–Vis–NIR spectrophotometer, scanning electron microscope, light and dark current density-voltage, external quantum efficiency and capacitance-voltage, respectively. Results indicate that Sb 2 Se 3 solar cells film deposited at 500 °C is better, with a better efficiency of 3.58%. Furthermore, SnO 2 high resistive layer was introduced into Sb 2 Se 3 solar cell to improve the junction quality, leading to a champion device efficiency of 4.41%. Image 1 • CdS/Sb 2 Se 3 bilayer was deposited by pulsed laser deposition for the first time. • Effects of substrate temperature on film properties and device performance were studied. • Sb 2 Se 3 film deposited at 500 °C is more suitable for Sb 2 Se 3 solar cells. • Champion efficiency of 4.41% was achieved due to the insertion of SnO 2 layer. [ABSTRACT FROM AUTHOR]

Sb 2 Se 3 , a very promising absorber layer for thin film solar cells, has attracted more and more attention because of its special structural and optical properties. In this work, pulsed laser deposition (PLD), a simple and effective technique, was used to deposit CdS/Sb 2 Se 3 solar cells for the first time. Results show that the grain size is 200–250 nm, the bandgap is calculated to be 1.21 eV and Sb 2 Se 3 thin film with thickness of 400 nm is more suitable for solar cells. To reduce reflection loss, lattice mismatch and shunt pathways, SnO 2 high resistive layer was introduced into Sb 2 Se 3 solar cells. Due to the introduction of SnO 2 , overall performance, especially J sc , was improved and champion device was achieved with efficiency of 4.77%. Image 1 • Sb 2 Se 3 solar cells were deposited by pulsed laser deposition for the first time. • PLD-Sb 2 Se 3 thin film has a bandgap of 1.21 eV and grain size is 200–250 nm. • PLD-Sb 2 Se 3 with thickness of 400 nm is more suitable for solar cells. • The introduction of SnO 2 improves device performance, especially J sc. [ABSTRACT FROM AUTHOR]

A low electric resistive and stable ohmic back contact are crucial to the commercial application of CdTe solar cells. In this study the Sb 2 Te 3 thin film is employed as a buffer layer in the back contact of CdTe solar cells. The Sb 2 Te 3 thin films are deposited at different substrate temperature by pulsed laser deposition and then characterized to investigate the thin film properties, firstly. Hall measurements shows the Sb 2 Te 3 thin film presents strong p-type semiconductor features with high Hall mobility and carrier concentration. CdTe solar cells with Sb 2 Te 3 buffer layer in different layer thickness and deposition temperature are fabricated to obtain the optimal experiment conditions for device performance. The dark J-V curve of CdTe solar cell with Sb 2 Te 3 buffer layer exhibits a typical diode curve without roll-over phenomenon. An insertion of Sb 2 Te 3 buffer layer eliminates the Schottky barrier resulting in remarkable enhancement of open circuit voltage, short-circuit current and fill factor. Besides, the external quantum efficiency gets improvement in almost all of the absorber wavelength compared to the cells with Au-only contact. [ABSTRACT FROM AUTHOR]

Sb 2 S 3 has a unique one-dimensional structure-composed (Sb 4 S 6) n ribbons leads to strong anisotropic carrier transport characteristic: carrier transport along the (Sb 4 S 6) n ribbon is more efficient than other ribbons. Therefore, it's crucial to control the direction of grain growth along the (hk1) orientation. In this work, the close space sublimation method was utilized to fabricate Sb 2 S 3 thin films with a systematic al regulation of substrate temperature. The results demonstrate that optimized Sb 2 S 3 thin film presented preferred orientation at the direction of (hk1). The champion device based on Au and Ni electrodes achieved a power conversion efficiency (PCE) of 3.06% and 1.69%, respectively. Schematic diagram of the close space sublimation system. [Display omitted] • The (hk1)-oriented Sb 2 S 3 thin films were prepared by close space sublimation method. • Study of the effect of different substrate temperatures on the structure and morphology of Sb 2 S 3 thin films. • Solar cells with structure of FTO/TiO 2 /CdS/Sb 2 S 3 /Ni were fabricated. • Ni was firstly used as the electrode for Sb 2 S 3 solar cells. [ABSTRACT FROM AUTHOR]

AlSb is a new type of optoelectronic material with wide potential application prospects, but the applications of AlSb thin films for solar cells were few reported before, owing to the intrinsic drawbacks of deliquescence for AlSb. In this work, four types of AlSb/Sb stacks were fabricated by using pulsed laser deposition: (1) AlSb/Sb (5 nm), (2) AlSb/Sb (10 nm), (3) AlSb/Sb (15 nm) and (4) the in situ annealed AlSb film covered with Sb film which thickness is 15 nm. The experimental results indicate that the thicker the Sb layer deposited on the surface of the AlSb film is, the lower the degree of deliquescence will be. XRD measurements showed that the AlSb/Sb stacks were not deliquesced completely after exposed to air for 48 h. The EDS spectrum suggested that the percentage of oxygen atoms in the annealed AlSb film covered with Sb (15 nm) was smaller than the unannealed. The SEM morphology analysis revealed the deliquescence of AlSb film: the local film deliquesced to form sand inclusions first, after then the gradual increased of the sand inclusions lead to all deliquescence of the crystalline AlSb. [ABSTRACT FROM AUTHOR]

Oxygen incorporation into ZnSe thin films in Ar/O 2 or O 2 ambient during radio-frequency sputtering was studied in this paper. With the increase of oxygen partial pressure ratio, the poor crystalline quality occurred in the films accompanying with a SeO 2 secondary phase. The values of optical band gap for the films increased after light oxygen doping, ranging from 2.65 to 2.88 eV, which indicates the formation of ZnSeO ternary compounds. The near-band edge emission was observed in all samples, i.e., electronic transitions from the valence band to the conduction band. Nevertheless, heavy incorporation of O in ZnSe thin films led to the formation of the thin films with wide energy band gap (∼5.61 eV) and high optical transmittance (∼90%). X-ray photoelectron spectroscopy spectra indicate that oxygen atoms ionized by plasma enhanced the formation of SeO 2 bonds with Se of ZnSe under the non-equilibrium conditions and many oxygen ions incorporated in the random sites, resulting in the formation of amorphous states. [ABSTRACT FROM AUTHOR]

Phase control is important to obtain high-performance CdTe solar cells when copper telluride is used as a back-contact for CdTe solar cells. In this paper single-phase CuTe was mainly controlled by the Cu/Te ratio via a co-evaporation method in combination with rapid thermal processing treatments. The alloy thin films as-deposited were mainly amorphous. After thermal treatments, the films experienced the phase transformation from mixed phases of CuTe and Cu 1.4 Te to single phase CuTe and then to coexisting phases. Single phase CuTe thin films were p-type semiconductor compounds and had a high carrier concentration, ∼10 21 cm −3 . With the copper telluride buffer layer, device performance than those without the buffer layer has been obtained. Moreover, single-phase orthorhombic CuTe contact buffer layer obviously improved diode characteristics and enhanced the device performance. [ABSTRACT FROM AUTHOR]

AlSb films which are a promising absorber layer for thin film solar cells were grown on glass substrate at different substrate temperature ranging from room temperature to 400 °C on glass substrates using aluminum-antimony alloying target by pulsed laser deposition (PLD) technique. Structural, optical and electrical properties of AlSb thin films were studied by X-ray diffraction (XRD), ultraviolet–visible spectrophotometer and a home-made four-probe-contact high temperature system respectively. XRD pattern shows that AlSb film is amorphous at room temperature, but when substrate temperature is higher than 100 °C, AlSb films present cubic phase structure with the preferential orientation of (111) plane. And intensity of diffraction peaks of AlSb film prepared at substrate temperature of 200 °C are stronger than that of other substrate temperature. The electrical measurement results show that conductivity activation energy of AlSb film is 0.25 eV and 0.28 eV. The indirect optical band gap is about 1.63 eV, which is very close to its theoretical value of 1.62 eV. The results of energy dispersive spectrometer (EDS) indicated the ratio of Al to Sb of AlSb films is about 1:1. [ABSTRACT FROM AUTHOR]

Aluminum antimony (AlSb) is a potential absorber for solar cells. In present work, we fabricated AlSb thin films by using pulsed laser deposition method, and investigated the influence of substrate temperature on the structural, electrical and optical properties of AlSb thin films. The results suggested that the AlSb thin films were crystal when the substrate temperature was higher than 300 °C. The average grain size of AlSb films increased and the electrical resistivity decreased with the increase of substrate temperature. At the optimized temperature of 400 °C, the optical band gap of AlSb thin film was 1.82eV. The simulated device performance of ZnS/AlSb ultra-thin solar cells showed that the power conversion efficiency was 18.01% and the quantum efficiency values were higher than 55% in the visible range. [ABSTRACT FROM AUTHOR]

Abstract: Cd1−x Zn x Te (CZT) has a band gap tailored continuously from 1.45 to 2.26 eV and is therefore a potential candidate for the top cell in tandem solar cell applications. In this paper, Cd0.6Zn0.4Te: Cu thin films were fabricated by RF magnetron sputtering from three targets (ZnTe, CdTe and Cu). X-ray diffraction patterns show that the as-deposited films were the cubic phase with a preferred (111) orientation. The strain formed in the Cu-doped Cd0.6Zn0.4Te thin films increased with increasing Cu concentration. All the films had a band gap of around 1.72 eV, but an apparent decrease of transmittance occurred in heavily doped ones.5.70 at% doped Cd0.6Zn0.4Te: Cu films presented only less than 10% transmittance. The conductivity of Cd0.6Zn0.4Te: Cu films at room temperature increased with Cu concentration in the range of 10−4∼100 S cm−1. The temperature dependence of dark conductivity for Cu-doped samples did not follow the Arrhenius behavior and a deviation appeared on the warming curve. The activation energy of the dark conductivity for doped and undoped CZT films was calculated between 0.15 and 0.80 eV. Finally, CdS/CZT junctions were prepared. These devices were found to indicate the photovoltaic effects. And the device performance was analyzed. [Copyright &y& Elsevier]

Abstract: Vanadium diselenide thin films were prepared by electron beam evaporation. The properties of vanadium diselenide thin films were investigated using X-ray diffraction, scanning electron microscope, transmission spectra, electrical and Hall measurements. To further investigate the application of vanadium diselenide thin films, device performance in CdTe solar cells with a vanadium diselenide layer was also studied. The results indicate that vanadium diselenide thin films had a stable hexagonal structure after annealing. The thin films were p-type semiconductor materials with the high work function and high carrier concentration. Vanadium diselenide thin films could form a good ohmic contact to CdTe solar cells. Thus, cell performance was greatly improved when introduced a vanadium diselenide buffer layer. [Copyright &y& Elsevier]

Correction to: Applied Physics A (2021) 127:560 https://doi.org/10.1007/s00339-021-04704-5 In this article, the following affiliation for Dr. Mohsen Ghali was missing: Physics Department, Faculty of Science, Kafrelsheikh University, 33516 Kafrelsheikh, Egypt. Publisher's Note Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations. [Extracted from the article]

CuSbSe 2 has been a potential absorber layer for thin film solar cells by reason of its attractive photovoltaic properties and environmentally friendly constituent elements. In this work, high-quality CuSbSe 2 thin film was prepared by pulsed laser deposition (PLD) and further in-situ annealing. Structural, morphological, compositional and optical properties of the unannealed and annealed films were characterized and compared separately. The results proved the existence of CuSbSe 2 , Sb 2 Se 3 and Cu 3 SbSe 3 in the unannealed film. With the rising of deposition temperature, the content of Sb 2 Se 3 increased significantly. Moreover, in-situ annealing at 350 °C can effectively reduce the Sb 2 Se 3 and Cu 3 SbSe 3 in the film. The atomic ratio of Cu:Sb:Se in the annealed film is estimated to be 25.45:26.29:48.27, basically consistent with the stoichiometry ratio of CuSbSe 2. Both annealed and unannealed CuSbSe 2 films revealed a high absorption coefficient greater than 104 cm−1. The optical band gap of the annealed film was about 1.15eV, which meets the requirements for the absorber layer of solar cells. •High-quality CuSbSe 2 thin film was successfully prepared by pulsed laser deposition •The effect of deposition temperature on CuSbSe 2 thin film prepared by pulsed laser deposition was explored •In-situ annealing was applied to reduce impurities and promote the formation of CuSbSe 2 •It would be helpful for the applications of CuSbSe 2 in solar cells in the future. [ABSTRACT FROM AUTHOR]