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We report on the interfacial passivation mechanism in CdSe quantum dot-sensitized ZnO nanocrystalline thin film, where different sulfide semiconductors (such as ZnS and CdS) and sulfide ions are used to modify ZnO nanocrystalline thin film before deposition of CdSe quantum dots (QDs). It is noticed that the highest light-to-electric conversion efficiency of CdSe quantum dot-sensitized ZnO nanocrystalline thin film solar cell is attained up to 4.18 % after CdS interfacial modification. Meanwhile, a simple treatment of ZnO nanocrystalline thin film in NaS solution can also increase the conversion efficiency of CdSe quantum dot-sensitized solar cell up to 3.45 %. The electron transfer and recombination processes occurred in the interface of QD-sensitized nanocrystalline thin films with and without the different interfacial modifications are detected by measuring intensity modulated photovoltage spectroscopy and electrochemical impedance spectroscopy of solar cells. These results indicate that adsorption of S ions on the surface active sites of ZnO nanoparticles is the main reason for the conversion efficiency improvement due to the interfacial passivation of sulfide semiconductors. [ABSTRACT FROM AUTHOR]

Flexible polymer-based magnetoelectric (ME) materials have broad application prospects and are considered as a new research field. In this article, FeCoSiB thin films were deposited on poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) substrate by DC magnetron sputtering. The structure of PVDF-TrFE/FeCoSiB heterostructure thin films was similar to 2-2. Under a bias magnetic field of 70 Oe, the composites have a dramatically increased ME voltage coefficient as high as 111 V/cm⋅Oe at a frequency of about 85 kHz. The piezoelectric coefficient of PVDF-TrFE thin films is 34.87 pC/N. The surface morphology of PVDF-TrFE thin films were studied by FESEM, and the results of XRD and FTIR showed that the β-phase of PVDF-TrFE thin films was dominant. Meanwhile, the effects of different heating conditions on the crystallization and piezoelectric properties of PVDF-TrFE films were also studied. The flexible ME heterojunction composite has a significant ME voltage coefficient and excellent piezoelectric properties at room temperature, which allows it to be a candidate material for developing flexible magnetoelectric devices. [ABSTRACT FROM AUTHOR]

Methylamine lead iodide (CH 3 NH 3 PbI 3) perovskite thin film solar cell has attracted much attention due to its low cost and high photoelectric conversion efficiency. Preparation of high quality perovskite thin film is the key to obtain high conversion efficiency of solar cells. Here, the pinhole-free CH 3 NH 3 PbI 3 layer with high coverage and smooth surface is prepared by the one-step solution method in air with ethylacetate as anti-solvent on an electron transport hybrid layer of TiO 2 nanoparticles coated porous carbon. The effect of ethylacetate as anti-solvent on the quality of perovskite thin film is studied in detail by comparing with chlorobenzene and ethylether. The high saturation and humidity resistance of ethylacetate in air control the nucleation and growing kinetics of perovskite crystals during the spin coating process, which facilitates the formation of uniform pinhole-free perovskite thin films. The perovskite solar cell based on the prepared high quality thin film achieves the highest conversion efficiency of 17.41% in ambient air with a relative humidity of 35%, which is superior to the perovskite thin films prepared with chlorobenzene and ethylether (conversion efficiency of 10.80% and 10.20%). The higher light-to-electric conversion efficiency is due to high coverage of the pinhole-free perovskite thin film and good contact with the electron transport layer and the hole transport layer. The high quality CH 3 NH 3 PbI 3 layer is prepared by the one-step solution method in air with ethylacetate as anti-solvent on an electron transport hybrid layer of TiO 2 nanoparticles coated porous carbon. The perovskite solar cell based on the prepared high quality thin film achieves the highest conversion efficiency of 17.41% in ambient air, which is due to high coverage of the pinhole-free perovskite thin film and good contact with the electron transport layer. Image 1 • Ethylacetate was used as anti-solvent to deposit high quality perovskite layer in air. • The saturation and humidity resistance of ethylacetate change the crystal kinetics. • The smooth pinhole-free perovskite layer with high coverage was prepared in air. • Perovskite solar cell based on the prepared film achieves the conversion efficiency of 17.41%. [ABSTRACT FROM AUTHOR]

To extend the spectral response region of squaraine dye (SQ)-sensitized solar cell, eosin Y (EY) is encapsulated in the SQ-sensitized nanocrystalline thin film. EY is first adsorbed on nanocrystalline TiO thin film (n-TiO), then a thin layer of EY contained ZnO (EY-ZnO) is electrodeposited, and SQ dye is finally sensitized to form two dye-sensitized nanocrystalline thin film with a structure of n-TiO/EY/EY-ZnO/SQ. There is a perfect spectral overlap between the emission of EY and the absorption of SQ; EY as an energy donor simultaneously transfers both electron and hole to the energy acceptor SQ according to the Förster resonance energy transfer (FRET) process. EY shifts the spectral response edge of SQ-sensitized solar cell toward blue from 550 to 450 nm through the FRET process in this new structure. Two dye-sensitized nanocrystalline thin film demonstrates a significant enhancement in light harvesting and photocurrent generation due to the FRET process. The thickness of the EY-ZnO thin layer and spectral overlap between emission of donor dye and absorption of acceptor dye are two important factors that affect the FRET process between EY and SQ in the structure of n-TiO/EY/EY-ZnO/SQ. [ABSTRACT FROM AUTHOR]

Vacuum ultraviolet (VUV) light with a wavelength of 172 nm has the capacity to convert the oxygen contained metal organic precursor into metal oxide. Here, zinc acetate precursor thin film is directly converted into ZnO thin film by the irradiation of 172 nm VUV light rather than the high temperature sintering. The converting processes were demonstrated by the measurements of FTIR, XRD, SEM and XPS. And then the effect of irradiating time on the morphology, thickness and transparence of the prepared ZnO thin films was discussed. The ZnO thin film was further used as the compact layer in the photoelectrode of dye-sensitized solar cell (DSSC) to suppress the recombination processes of photogenerated electrons on the conducting glass electrode. For the different irradiation times, the photoelectric conversion efficiency of DSSC based on the compact layer prepared by the irradiation for 30 min is the highest reaching 10.27%, which is also higher than that of DSSCs without the compact layer and even with the compact layer prepared by the high temperature sintering. The uniform, dense, pinhole-free and amorphous ZnO thin film on the conducting glass substrate can be successfully prepared using the VUV irradiation technology for the compact layer of DSSCs. The ZnO compact layer prepared by the VUV light of 172 nm from zinc acetate precursor thin film shows better performance than the sintered layer for the photoelectrode of dye-sensitized solar cell. [Display omitted] • ZnO compact thin film is prepared by 172 nm VUV irradiation from zinc acetate. • ZnO thin film is used as a compact layer in photoelectrode of DSSCs. • The compact layer prepared by VUV irradiation is better than the sintered layer. [ABSTRACT FROM AUTHOR]

Quaternary Cu 2 ZnSnS 4 (CZTS) nanocrystalline thin films were in situ grown on FTO coated conductive glass by a low cost solvothermal method. The effect of the reaction time and the concentration of precursor solution on the purity and morphologies of the deposited thin films was studied. The morphology, crystal structure and composition of the deposited thin films were characterized by scanning electron microscope, high resolution transmission electron microscope, X-ray diffraction, Raman spectroscopy and energy-dispersive X-ray spectroscopy. The pure wurtzite CZTS nanoparticles can be formed as the reaction time is 20 h. The film prepared at the optimized precursor solution concentration has uniform thickness, smooth surface and tight binding between the nanoparticles. The performance of the deposited CZTS thin films used as the counter electrode for dye-sensitized solar cells (DSSCs) was evaluated by measuring photocurrent density-voltage curves of DSSCs, electrochemical impedance spectroscopies and Tafel polarization curves of the symmetric cells. Photoelectric conversion efficiency of DSSC based on the optimized CZTS counter electrode reached 6.19%. The excellent photoelectric performance is attributed to the better surface morphology and conductive skeleton of the prepared CZTS thin film. The in situ solvothermal preparation method of the CZTS thin films for counter electrode of DSSCs is green, low cost and simple. Cu 2 ZnSnS 4 thin film in situ deposited on FTO substrate by a low cost solvothermal method has good microstructure and catalytic activity to the iodide reduction to be used as a high efficient counter electrode of dye-sensitized solar cells. Image 1 • Cu 2 ZnSnS 4 thin film is in situ deposited on FTO substrate by a low cost solvothermal method. • Cu 2 ZnSnS 4 film is well adhered to the substrate to greatly reduce the inactivation interface. • As CE of dye-sensitized solar cells, Cu 2 ZnSnS 4 film has equivalent catalytic activity to Pt. [ABSTRACT FROM AUTHOR]

BaTiO 3 is used to fabricate the electron transport layer of perovskite solar cells due to its spontaneous polarization. Li+ ions were doped into BaTiO 3 by the hydrothermal synthesis to increase the spontaneous polarization. The particle size of the as-prepared BaTiO 3 nanoparticles becomes smaller and more uniform for doping of Li+ ions with a molar ratio of 1.0 during the synthesis processes. The absorption edge shifts towards the short wavelength with the increase in the doping amount. Further, TiO 2 nanocrystalline thin film was deposited on the Li-doped BaTiO 3 thin film, the double layer was used as an electron transport layer of perovskite solar cell to indirectly demonstrate the effect of doping on the spontaneous polarization of BaTiO 3. The perovskite solar cell based on BaTiO 3 with 1.0 doping molar ratio of Li+ ions shows the highest light-to-electric conversion efficiency of 14.3% accompanying with the highest short-circuit photocurrent density. The measurements of impedance spectra and intensity modulating photocurrent spectra indicate that the photocurrent enhancement of perovskite solar cells is attributed to the spontaneous polarization enhancement of Li-doped BaTiO 3 thin films. The enhanced internal electric field in the BaTiO 3 thin layer accelerates the photogenerated electron transport in the electron transport layer of perovskite solar cell. Image 1 • The Li+ doping affects spontaneous polarization on BaTiO 3. • The spontaneous polarization in Li-doped BaTiO 3 promotes the electron transport. • Li-doped BaTiO 3 in electron transport layer improves performance of perovskite solar cell. [ABSTRACT FROM AUTHOR]