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This paper proposes a new pixel circuit using low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) for use in mobile active matrix organic light-emitting diode (AMOLED) displays. The purpose of a pixel circuit is to supply stable and uniform currents to current-driving devices of OLEDs. The proposed pixel circuit uses overlapping compensation times to extend the period of precise sensing of $V_{\mathrm {TH}}$ variations of LTPS TFTs. Moreover, the proposed circuit prevents a current from flowing into an OLED when the OLED is not operated in the emission stage to avoid image flicker. An 1.3-in panel that uses the proposed pixel circuit is fabricated. Measurement results verify that the increased $T_{\mathrm {COMP}}$ of 33.3 $\mu \text{s}$ results in higher contrast ratio and lower required data voltages than those at $T_{\mathrm {COMP}}$ values of 4.3 and 2.2 $\mu \text{s}$. Red, green, and blue images displayed by the fabricated panel with a $T_{\mathrm {COMP}}$ of 33.3 $\mu \text{s}$ with a 255 gray level are all much more uniform than with $T_{\mathrm {COMPS}}$ of 4.3 and 2.2 $\mu \text{s}$. White images with a $T_{\mathrm {COMP}}$ of 33.3 $\mu \text{s}$ for 16 and 8 gray levels on the fabricated panel confirm that the serious line and spot defects in the images with $T_{\mathrm {COMP}}$ values of 4.3 and 2.2 $\mu \text{s}$ are effectively eliminated. Therefore, the proposed pixel circuit is suitable for use in mobile AMOLED displays. [ABSTRACT FROM AUTHOR]

This paper proposes amorphous indium–gallium–zinc oxide thin-film transistors (TFTs) four-transistor-two-capacitor (4T2C) pixel circuit in combination with a top-anode organic light-emitting diode (OLED) for the use in 8K4K active-matrix organic light-emitting diode displays (AM-OLEDs). The proposed pixel circuit compensates for driving TFTs threshold voltage (${V} _{\textsf {TH}}$) shifts and mobility variations, ${V} _{\textsf {DD}}$ current–resistance (${I}$ – ${R}$) drops, and ${V} _{\textsf {SS}}~{I}$ – ${R}$ -induced rises. Both the positive and negative ${V} _{\textsf {TH}}$ of the driving TFT can be sensed by the proposed circuit. In this paper, we analyze the impact of the driving TFT compensation time for low gray levels. The current error rates are calculated when TFT mobility variations are considered. The proposed pixel circuit allows an increase in the compensation time to reduce the impact of driving TFT ${V} _{\textsf {TH}}$ and mobility variations on the performance of 4T2C pixel circuit. Conventional two-transistor-one-capacitor, five-transistor-two-capacitor, and proposed 4T2C pixel circuits are simulated and compared in this paper. The proposed pixel 4T2C circuit reduces the current error rates to below 5.79% when the ${V} _{\textsf {TH}}$ shifts of ±2 V, mobility variations of ±10%, ${V} _{\textsf {DD}}~{I}$ – ${R}$ drops of 1 V, and ${V} _{\textsf {SS}}~{I}$ – ${R}$ rises of 1 V are all considered. We show that the proposed 4T2C pixel circuit is suitable for 8K4K AM-OLEDs. [ABSTRACT FROM AUTHOR]

This paper proposes a new hydrogenated amorphous silicon thin-film-transistor-based (a-Si:H TFT-based) gate driver circuit that uses the time-division driving method to ameliorate the display-to-touch crosstalk. The proposed work utilizes a recharging circuit to discharge the voltage on the gate node of the driving TFT when the touch sensing starts with the purpose of suppressing the long-term stress of the driving TFT, and charges the gate node of the driving TFT again before the end of the touch-sensing period to enhance the driving capability of the gate driver circuit. Furthermore, the proposed gate driver circuit achieves bidirectional transmission and an adjustable reporting rate of touch sensing. Measurements verify that the threshold voltage shift of the driving TFT is suppressed from 4.8 to 2.9 V after 120 h of stress at 85 °C and the output waveforms of the proposed gate driver circuits are generated correctly with forward transmission, backward transmission, and pausing in different stages. Moreover, the measured output waveforms are stable without distortion after 360 h reliability test at 85 °C. Consequently, the proposed gate driver circuit is suitable for use in 5.46-in full high-definition panels with in-cell touch technology. [ABSTRACT FROM AUTHOR]

This work proposes a new pixel structure based on amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) and a parallel addressing scheme for high-resolution active-matrix organic light-emitting diode (AMOLED) displays. The proposed circuit compensates for the nonuniformity of luminance that is caused by shifts in the threshold voltage (${{V}}_{{\rm{TH}}}$) and mobility of driving TFTs. Measurement results verify that the parallel addressing scheme successfully extends the compensation time and accurately detects the ${{V}}_{{\rm{TH}}}$ of the driving TFT. Moreover, the proposed circuit reduces the variations of OLED luminance from more than 83% to less than 13% when the ${{V}}_{{\rm{TH}}}$ and mobility of driving TFT shifts by 1 V and 30%, respectively, and the ${{V}}_{{\rm{TH}}}$ of OLED varies from 0 to 0.9 V. [ABSTRACT FROM PUBLISHER]

This letter presents a new pixel circuit reaching simultaneous compensation for a threshold voltage ( $V_{{\rm{TH}}}$) shift of normally-off and normally- on a-IGZO TFTs, as well as luminance drop of an OLED device for ultrahigh-definition active-matrix organic light-emitting diode displays. Simulation results demonstrate the successful detection of a 1 V shift of threshold voltage despite normally-off and normally-on characteristics by the novel source-follower structure. Furthermore, the interdependence between luminance and threshold voltage shift of the OLED device is measured. Based on the simulations using the measured interdependence, the luminance drop caused by OLED aging is suppressed below 5% at different data voltages. [ABSTRACT FROM PUBLISHER]

This work presents a simple pixel circuit that utilizes two low-temperature polycrystalline-silicon thin-film transistors (LTPS TFTs) and one capacitor for active-matrix organic light-emitting diode (AMOLED) displays with voltage-programmed method. According to simulation results under 120 Hz frame rate and Full-HD resolution, the relative current error rates with ±0.5 V threshold voltage variation of the driving TFT are less than 3.4% over entire range of data voltages. Therefore, the proposed pixel circuit effectively compensates for threshold voltage variation of the driving TFT, and it can be applied to small-sized and high-resolution displays. [ABSTRACT FROM AUTHOR]