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Additive printing techniques have been widely investigated for fabricating multilayered electronic devices. In this work, a layer‐by‐layer printing strategy is developed to fabricate multilayered electronics including 3D conductive circuits and thin‐film transistors (TFTs) with low‐temperature catalyzed, solution‐processed SiO2 (LCSS) as the dielectric. Ultrafine, ultrasmooth LCSS films can be facilely formed at 90 °C on a wide variety of organic and inorganic substrates, offering a versatile platform to construct complex heterojunction structures with layer‐by‐layer fashion at microscale. The high‐resolution 3D conductive circuits formed with gold nanoparticles inside the LCSS dielectric demonstrate a high‐speed response to the transient voltage in less than 1 µs. The TFTs with semiconducting single‐wall carbon nanotubes can be operated with the accumulation mode at a low voltage of 1 V and exhibit average field‐effect mobility of 70 cm2 V−1 s−1, on/off ratio of 107, small average hysteresis of 0.1 V, and high yield up to 100% as well as long‐term stability, high negative‐gate bias stability, and good mechanical stability. Therefore, the layer‐by‐layer printing strategy with the LCSS film is promising to assemble large‐scale, high‐resolution, and high‐performance flexible electronics and to provide a fundamental understanding for correlating dielectric properties with device performance. [ABSTRACT FROM AUTHOR]

The rapid sintering of printable metal nanoparticle inks is vital for the industrial mass production of electronic devices. In this paper, we report a rapid laser annealing method for printed Ag nanoparticle-based inks. We also fabricate Ag circuits and organic thin-film transistors (OTFTs) on flexible plastic substrates through spontaneous patterning under deep ultraviolet (DUV) exposure. Compared to the conventional thermal annealing, laser annealing significantly reduces the processing time from 3600 to 10 s while preventing damage caused by excessive heat. The OTFT with laser-annealed Ag source/drain electrodes achieved good performance with saturated mobility of 1.68 cm $^{{2}}\cdot \text{V}^{-{1}}\cdot \text{s}^{-{1}}$ , high-reliability factor of 86.75%, and large saturated drain current resulting from the small channel resistance. This rapid laser annealing method is feasible for printing flexible electronics using metal nanoparticle-based inks in industrial mass production. [ABSTRACT FROM AUTHOR]

We explore the device physics of thin film transistors (TFTs) with non-Ohmic contacts and develop a simple and fast method for evaluating the contact properties TFTs through output characteristics. Using one single output scan, the quantitative relationship between contact resistances and drain voltage were evaluated, revealing the property of interfacial injection at non-Ohmic contacts. This is demonstrated and validated in both TFT simulations and experiments employing inorganic and organic TFTs. The approach can be applied to general TFTs with arbitrary materials and configurations conveniently and enables faster and improved understanding of TFT operation and device physics. [ABSTRACT FROM AUTHOR]

Back Cover In article number 2100263, Liu, Zhao, Minari, and co‐workers report a layer‐by‐layer printing strategy for high‐performance flexible electronics, including 3D circuits and thin‐film transistors (TFTs). Low‐temperature catalyzed solution‐processed SiO2 (LCSS) was developed as the interlayer insulating medium which enables fabrication of printed TFTs with a field‐effect mobility of 70 cm2 V−1 s−1 at operation voltages below 1 V. [ABSTRACT FROM AUTHOR]

For newly developed semiconductors, obtaining high‐performance transistors and identifying carrier mobility have been hot and important issues. Here, large‐area fabrications and thorough analysis of InGaZnO transistors with enhanced current by simple encapsulations are reported. The enhancement in the drain current and on–off ratio is remarkable in the long‐channel devices (e.g., 40 times in 200 µm long transistors) but becomes much less pronounced in short‐channel devices (e.g., 2 times in 5 µm long transistors), which limits its application to the display industry. Combining gated four‐probe measurements, scanning Kelvin‐probe microscopy, secondary ion mass spectrometry, X‐ray photoelectron spectroscopy, and device simulations, it is revealed that the enhanced apparent mobility up to several tens of times is attributed to the stabilized hydrogens in the middle area forming a degenerated channel area while that near the source‐drain contacts are merely doped, which causes artifact in mobility extraction. The studies demonstrate the use of hydrogens to remarkably enhance performance of oxide transistors by inducing a new mode of device operation. Also, this study shows clearly that a thorough analysis is necessary to understand the origin of very high apparent mobilities in thin‐film transistors or field‐effect transistors with advanced semiconductors. With simple and optimized encapsulations, InGaZnO thin‐film‐transistors (TFT) achieve significantly enhanced apparent mobility (up to 40 times) as compared with pristine TFT. To understand that, the current–voltage characteristics, capacitance–voltage relations, gated four‐probe measurement for potentials, scanning Kelvin probe microscope for surface, 2D technology computer aided design device simulations, depth‐profiling of elements, photoelectron spectroscopy for ions, density functional theory calculations, and temperature‐dependent measurements are investigated. [ABSTRACT FROM AUTHOR]

In article number 1801189, Chuan Liu and co‐workers present hydrogen doped IGZO thin‐film transistors induced by simple SINX encapsulation which exhibits substantially enhanced current and stability. Combing photoelectron spectroscopy, potential mapping and simulation, the nonuniform carrier distribution is revealed as the cause for the ultra‐high current and apparent device mobility, which is 40 times higher than the carrier mobility. [ABSTRACT FROM AUTHOR]

Additive printing techniques have been widely investigated for fabricating multilayered electronic devices. In this work, a layer‐by‐layer printing strategy is developed to fabricate multilayered electronics including 3D conductive circuits and thin‐film transistors (TFTs) with low‐temperature catalyzed, solution‐processed SiO2 (LCSS) as the dielectric. Ultrafine, ultrasmooth LCSS films can be facilely formed at 90 °C on a wide variety of organic and inorganic substrates, offering a versatile platform to construct complex heterojunction structures with layer‐by‐layer fashion at microscale. The high‐resolution 3D conductive circuits formed with gold nanoparticles inside the LCSS dielectric demonstrate a high‐speed response to the transient voltage in less than 1 µs. The TFTs with semiconducting single‐wall carbon nanotubes can be operated with the accumulation mode at a low voltage of 1 V and exhibit average field‐effect mobility of 70 cm2 V−1 s−1, on/off ratio of 107, small average hysteresis of 0.1 V, and high yield up to 100% as well as long‐term stability, high negative‐gate bias stability, and good mechanical stability. Therefore, the layer‐by‐layer printing strategy with the LCSS film is promising to assemble large‐scale, high‐resolution, and high‐performance flexible electronics and to provide a fundamental understanding for correlating dielectric properties with device performance. [ABSTRACT FROM AUTHOR]