1. Downscaling Metal—Oxide Thin-Film Transistors to Sub-50 nm in an Exquisite Film-Profile Engineering Approach.
- Author
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Lyu, Rong-Jhe, Shie, Bo-Shiuan, Lin, Horng-Chih, Li, Pei-Wen, and Huang, Tiao-Yuan
- Subjects
METALLIC oxides ,THIN film transistors ,NANOELECTROMECHANICAL systems ,ZINC oxide ,LAMINATED materials - Abstract
We report an exquisite, film-profile-engineering approach for producing nanometer-scale channel-length (L) ZnO thin-film transistors (TFTs). The scheme is based on a unique laminated structure in conjunction with a well-designed etching process for building a slender, suspending bridge that shadows the subsequent deposition of pivotal thin films of ZnO and gate oxide as well as simultaneously defines L of the TFTs. With the approach, we have ingeniously downscaled L of ZnO TFTs to as short as 10 nm. The experimental ZnO TFTs of L = 50 and 30 nm, respectively, exhibit excellent performance in terms of high on/off current ratio of 7.9 \times 10^\mathrm \mathbf 7 and 4.2 \times 10^\mathrm \mathbf 7 , superior subthreshold swing of 92 and 95 mV/decade, and small drain induced barrier lowering of 0.1 and 0.29 V/V. Remarkably the nanometer-scale ZnO TFTs possess excellent device uniformity. Furthermore, the precise control over the geometrical sizes for the channel length enables the fabrication of ultrashort ZnO TFTs of L as short as 10 nm with reasonable gate transfer characteristics. [ABSTRACT FROM AUTHOR]
- Published
- 2017
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