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Highlights: [•] Impact of Ge content on Vt, β, and Id mismatches in advanced PMOSFETs. [•] Global improvement ofelectrical parameters mismatchobserved in PMOSETs with SiGe channel. [•] The reduction of Coulomb scatteringwith the introduction of Ge improves β mismatch. [Copyright &y& Elsevier]

This paper aims at reviewing the results that we have obtained during the last ten years in the characterization and modeling of transistor mismatch in advanced complementary metal–oxide–semiconductor (CMOS) technologies. First, we review the theoretical background and modeling approaches that are generally employed for analyzing and interpreting the mismatch results. Next, we present the experimental procedures and methodologies that we used for characterizing the transistor matching. Then, we discuss typical matching results that were obtained on modern CMOS technologies and analyze the main variability (mismatch) sources. Finally, we conclude by summarizing our findings and giving some recommendations for future technologies. [ABSTRACT FROM PUBLISHER]

Comprehensive 3-D simulations have been carried out and compared with experimental data highlighting the dominant sources of statistical variability in 32-nm high-\kappa/\metal gate MOSFET technology. The statistical variability sources include random discrete dopants, line edge roughness, and metal gate granularity. Their relative importance is highlighted in the numerical simulations. Excellent agreement is achieved between the simulated and measured standard deviation of the threshold voltage. [ABSTRACT FROM PUBLISHER]