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In this paper, a semiself-protection scheme is proposed and developed for gigahertz output electrostatic-discharge (ESD) protection. The output transistor acts as a trigger device to trigger the ESD protection device, and then, it is turned off when the ESD protection device turns on. Thus, the capacitance of a gigahertz high-frequency output pad can be minimized because this scheme is without any additional trigger device or any passive component. [ABSTRACT FROM AUTHOR]

A simple scheme is proposed to increase the hold voltage and not change the original trigger voltage of a silicon‐controlled rectifier (SCR) to enhance its latch‐up immunity without changing the device dimensions. It is found that using the lightly doped P‐diffusion instead of the highly doped P+ diffusion as the P emitter of the anode can increase the hold voltage of an SCR. [ABSTRACT FROM AUTHOR]