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The total ionizing dose response of hybrid FinFET with a modified gate stack (GS) is investigated and examined for the various ultra-thin body (UTB) layers and combination of gate oxide stacks. Incorporation of UTB layer to the conventional FinFET enhances the mechanical strength of the device. While being irradiated, conventional FinFET with UTB layer reduces the accumulation of trap charges to a certain level. Further, reduction of these charges can be achieved by using a high-k dielectric with UTB layer. This reduction in interface trap charges enhance the OFF-state performance while maintaines the positive threshold voltage of the device. The combination of UTB and GS in SOI-FinFET renders it more reliable and tolerant to ionizing dose. • Total ionizing dose response of hybrid FinFET with a modified gate stack (GS) is investigated. • Incorporation of UTB layer to the conventional FinFET enhances the mechanical strength of the device. • Under radiation FinFET with UTB layer reduces the accumulation of trap charges. • Reduction in interface trap charges enhances the OFF state performance. • The combination of UTB and GS in SOI-FinFET renders it more reliable and tolerant to ionizing dose. [ABSTRACT FROM AUTHOR]

The effect total ionizing dose on a linear gate workfunction modulated SOI P-FinFET is analyzed and compared with the bulk P-FinFET. This technique improves the device electrostatic integrity for pre and post radiation condition. A decade improvement in I OFF is obtained for both the bulk and proposed devices. Moreover, both the SOI devices offer 35% and 29% less subthreshold swing for pre-rad condition. After irradiation trap charges are accumulated in oxide and semiconductor/insulator interfaces, which makes threshold more negative. The linear gate workfunction modulation gives more V th for both devices. At high radiation of 2000 krad dose proposed SOI device shows 39% more threshold voltage as compared to LGWM bulk P-FinFET. The maximum V th shift is observed in single workfunction bulk P-FinFET. Based on the simulation results, the proposed SOI P-FinFET is proved to be better TID tolerant and reliable. [ABSTRACT FROM AUTHOR]

The total ionizing dose (TID) response of SOI-FinFET with linear gate workfunction modulation is presented and evaluated. The gate metal workfunction is linearly modulated from source to drain to maintain the electrostatic integrity of the device. At the higher radiation dose (2000 krad), the proposed device has shown reduced Off-current by 2-decade leads to improvement in current switching ratio. Moreover, the proposed device offers 9% and 3% improvement in subthreshold swing before and after the radiation, respectively. During irradiation the trap charges are found in the BOX layer and SiO 2 /Si interface. These charges contributed towards shifting of threshold voltage (V th). The linear workfunction modulation shows a 73% more V th as compared to single workfunction FinFET for radiation of 2000 krad dose. As per simulation results, the proposed device is reliable and capable to sustain in the radiation environment. • Total ionizing dose response of SOI-FinFET with linear gate workfunction modulation is studied. • The gate metal workfunction is linearly modulated from source to drain to maintain the electrostatic integrity of the device. • Fin geometry of the proposed model is optimized to get higher current switching ratio. • At the higher radiation dose (2000 krad), the proposed device shows reduced Off-current by 2 decades. • The linear workfunction modulation shows a 50% minimal shift in V th. [ABSTRACT FROM AUTHOR]