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Here, we report successful single crystal growth of new possible magnetic topological insulator (MTI) FeBi2Te4 by a self-flux method via a vacuum encapsulation process. The detailed Rietveld analysis of powder XRD data shows the as-grown MTI crystal to be mainly dominated by the FeBi2Te4 phase along with minority phases of Bi2Te3 and FeTe. Scanning electron microscope (SEM) image shows the morphology of as-grown MTI single crystal to be of layered type laminar structure. Raman spectroscopy of the crystal exhibited three distinct phonon modes at 65, 110, and 132 cm−1 along with two split secondary modes at 90, and 144 cm−1. The secondary split modes are the result of FeTe intercalation in the Bi2Te3 unit cell. Magnetoresistance (MR%) measurement has been performed at different temperatures, i.e., 200 K, 20 K, and 2 K in applied magnetic fields up to ± 12 Tesla, which showed very low MR in comparison with pure Bi2Te3 crystal. Temperature dependence of DC magnetization measurements shows the FeBi2Te4 crystal to be mainly of ferromagnetic (FM) or ferrimagnetic nature above 295 K, albeit a secondary weak magnetic transition is seen at 54–46 K as well. Detailed isothermal magnetization (MH) results showed that the FM saturation moment at 295 K is 0.00213 emu/g, which is nearly invariant until 400 K. In summary, we had grown an MTI FeBi2Te4 single crystal, which may be a possible entrant for the quantum anomalous Hall (QAH) effect at room temperature or above. [ABSTRACT FROM AUTHOR]

We report successful growth of magnetic topological insulator (MTI) MnBi2Te4. The heating schedule basically deals with growth of the crystal from melt at 9000C and very slow cooling (10C/hr) to around 6000C with 24 hours hold time, followed by cooling to room temperature. Our detailed, PXRD Reitveld analysis showed that the resultant crystal is dominated mainly by MnBi2Te4 and minor phases of Bi2Te3 and MnTe. The transport measurements showed a step like behavior at around 150 K followed by cusp like structure in resistivity at around 25 K (TP) due reported anti-ferromagnetic ordering of Mn. Both the resistivity transitions are seen clearly in dρ/dT measurements at 150 K and 20 K, respectively. The 25 K transition of the compound is also seen in magnetic susceptibility. Low temperature (5 K) magneto-resistance (MR) in applied field of up to 6 Tesla exhibited –ve MR below 3 Tesla and + ve for higher fields. Also, seen are steps in MR below 1 Tesla. The studied MnBi2Te4 MTI crystal could be a possible candidate for quantum anomalous Hall (QAH) effect. [ABSTRACT FROM AUTHOR]

• A single crystal of SnSb 2 Te 4 is grown by using a simple self-flux method. • Crystalline growth and phase purity are evident from XRD, SEM, and EDAX measurements. • Two different Raman modes are observed in parent Sb 2 Te 3 due to changes in the middle atomic layer. • We are the first to report MR% behavior of SnSb 2 Te 4 +5T. • Presence of WAL effect in SnSb 2 Te 4. • DFT calculated bulk electroic band structure of SnSb 2 Te 4. Here, we report successful single crystal growth of SnSb 2 Te 4 using the self-flux method. Unidirectional crystal growth is confirmed through X-ray Diffraction (XRD) pattern taken on mechanically cleaved crystal flake while the rietveld refined Powder XRD (PXRD) pattern confirms the phase purity of the grown crystal. Transmission Electron Microscopy (TEM), Scanning Electron Microscopy (SEM) image and Energy Dispersive X-Ray analysis (EDAX) confirm crystalline morphology and exact stoichiometry of constituent elements. Vibrational Modes observed in Raman spectra also confirm the formation of the SnSb 2 Te 4 phase. DC resistivity (ρ-T) measurements confirm the metallic character of the grown crystal. Magneto-transport measurements up to±5T show a non-saturating low magneto-resistance percentage (MR%). V-type cusp and Hikami Larkin Nagaoka (HLN) fitting at lower field confirms the Weak Anti-localization (WAL) effect in SnSb 2 Te 4. Density Functional Theory (DFT) calculations were showing topological non-trivial electronic band structure. It is the first-ever report on MR study and WAL analysis of SnSb 2 Te 4 single crystal. [ABSTRACT FROM AUTHOR]