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The propagation of Analog Single Event Transients (ASETs) to multiple outputs of Bipolar Junction Transistor (BJTs) Integrated Circuits (ICs) is reported for the first time. The results demonstrate that ASETs can appear at several outputs of a BJT amplifier or comparator as a result of a single ion or single laser pulse strike at a single physical location on the chip of a large-scale integrated BJT analog circuit. This is independent of interconnect cross-talk or charge-sharing effects. Laser experiments, together with SPICE simulations and analysis of the ASET’s propagation in the s-domain are used to explain how multiple-output transients (MOTs) are generated and propagate in the device. This study demonstrates that both the charge collection associated with an ASET and the ASET’s shape, commonly used to characterize the propagation of SETs in devices and systems, are unable to explain quantitatively how MOTs propagate through an integrated analog circuit. The analysis methodology adopted here involves combining the Fourier transform of the propagating signal and the current-source transfer function in the s-domain. This approach reveals the mechanisms involved in the transient signal propagation from its point of generation to one or more outputs without the signal following a continuous interconnect path. [ABSTRACT FROM PUBLISHER]

The impact of the positive feedback loop on analog single event transient (ASET) shapes was investigated for a comparator-with-hysteresis circuit. Simulation based on previous developed ASET simulation tool is used to model the impact of the power supply voltage, the input voltage level and the injected energy. Simulation results show that these kinds of circuits are sensitive to flip-flop effects. This phenomenon occurs if the input voltage is in the hysteresis band range. In this case, simulations show that the ASET can latch the output into a non-desired state by changing the state of the circuit on his transfer characteristic curves. Laser experiments were conducted and show that the simulation outputs are in agreement with the experimental collected data. [ABSTRACT FROM AUTHOR]

A high level model is developed using circuit analysis to predict the synergy effect observed on a three stages operational amplifier. This model makes possible to explain and to predict the analog single event transients propagation in circuitry. The effect of total ionizing dose is taken into account by varying the model parameters using the monitoring of the usual supply current induced degradation of the operational amplifier. [ABSTRACT FROM AUTHOR]