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A new synthesis method for the design of broadband impedance matching network has been introduced to match the transistor input. The proposed matching network would be a realistic alternative to those that are frequently designed in low-pass structure. Easy-to-use design equations are given for this filter-based matching network. The required impedance of the stubs and the connecting lines can be directly calculated from the equations. This synthesis method simplifies the implementation of the network in the distributed form as compared with the LC low-pass matching network where equivalences are necessarily required in the rough conversion from lumped-to-distributed elements. The high-efficiency mode of operation is guaranteed by the constructed output low-pass matching network, since the LC low-pass network can provide the prescribed load terminations at fundamental frequencies and at harmonics. A commercially available 10-W GaN HEMT device (CGH40010) was used in this investigation. The proposed broadband power amplifier exhibits band-pass Chebyshev response in S-parameter measurements, and yields good gain flatness (±0.5 dB) and input return loss (>13 dB). Power-added efficiency of 58%–72% has been measured in large-signal measurements. After digital predistortion, the measured adjacent channel leakage power ratio is below −50 dBc at ±5- and ±10-MHz offset, when driven by 5- and 10-MHz WCDMA signals at 7-dB power back off. [ABSTRACT FROM AUTHOR]