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Your search keyword '"Ghibaudo, Gérard"' showing total 21 results

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21 results on '"Ghibaudo, Gérard"'

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1. Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K.

2. Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms.

3. Less mobility degradation induced by transverse electric-field in junctionless transistors.

4. Separation of surface accumulation and bulk neutral channel in junctionless transistors.

5. Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature.

6. Source/drain induced defects in advanced MOSFETs: what device electrical characterization tells.

7. Compact Capacitance Model of Undoped or Lightly Doped Ultra-Scaled Triple-Gate FinFETs.

8. A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs.

9. Characterization and Modeling of Transistor Variability in Advanced CMOS Technologies.

10. Modeling the Independent Double Gate Transistor in Accumulation Regime for 1TDRAM Application.

11. Electrical Analysis of Mechanical Stress Induced by STI in Short MOSFETs Using Externally Applied Stress.

12. A New Technique to Extract the Source/Drain Series Resistance of MOSFETs.

13. On the physical origins of mismatch in Si/SiGe:C heterojunction bipolar transistors for BiCMOS technologies

14. Behavior of subthreshold conduction in junctionless transistors.

15. Back biasing effects in tri-gate junctionless transistors.

16. Impact of Ge proportion on advanced SiGe bulk P-MOSFET matching performances.

17. Effects of channel width variation on electrical characteristics of tri-gate Junctionless transistors

18. Drain-current variability in 45nm bulk N-MOSFET with and without pocket-implants

19. Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature.

20. High threshold voltage matching performance on gate-all-around MOSFET

21. Channel width dependent subthreshold operation of tri-gate junctionless transistors.

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