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1. Improvement of RCA Transistor Using RTA Annealing After the Formation of Interfacial Oxide.

Author

Zhang Li Chun, Jin Hai Yan, Ye Hong Fei, Gao Yu Zhi, Ning Bao Jun, and Mo Bang Xian

Subjects
TRANSISTORS, SILICON, BIPOLAR transistors
Abstract

Focuses on a study which described a polysilicon emitter RCA transistor, an ultra-thin interfacial oxide layer between polysilicon and silicon emitter. Discussion on silicon bipolar transistors; Description of device fabrication; Analysis of results. more...

Published
2002
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