1. Highly Scaled InGaZnO Ferroelectric Field-Effect Transistors and Ternary Content-Addressable Memory.
- Author
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Sun, Chen, Han, Kaizhen, Samanta, Subhranu, Kong, Qiwen, Zhang, Jishen, Xu, Haiwen, Wang, Xinke, Kumar, Annie, Wang, Chengkuan, Zheng, Zijie, Yin, Xunzhao, Ni, Kai, and Gong, Xiao
- Subjects
ASSOCIATIVE storage ,FIELD-effect transistors ,FERROELECTRIC polymers ,PHOTONIC band gap structures ,RANDOM access memory ,RELIABILITY in engineering - Abstract
We demonstrate nonvolatile and area-efficient ternary content-addressable memories (TCAMs) featuring amorphous indium–gallium–zinc–oxide (a-IGZO) ferroelectric field-effect transistors (FeFETs) with excellent electrical characteristics. An extremely large sensing margin of the TCAM array is achieved due to the large current ON/OFF ratio ($I_{ \mathrm{\scriptscriptstyle ON}}/I_{ \mathrm{\scriptscriptstyle OFF}})$ of the a-IGZO FeFETs. Our HfxZr $_{\text {1-x}}\text{O}$ 2 (HZO)-based a-IGZO FeFETs have a metal–ferroelectric–metal–insulator–semiconductor (MFMIS) structure. By engineering the area ratio of the ferroelectric layer (${A}_{Fe}$) and the metal–oxide–semiconductor layer (${A}_{MOS}$), a large memory window (MW) of 2.9 V is realized. Reliability test results, including retention, endurance, and positive bias temperature instability, show long-term retention of more than ten years and high endurance of 108 cycles. In addition, by scaling the channel length down to 40 nm, ON current of $77 ~\mu \text{A}/ \mu \text{m}$ (${V}_{\mathrm{GS}} - {V}_{\mathrm{TH}}$ = 5 V and ${V}_{\mathrm{DS}}$ = 2 V) and ${I}_{ \mathrm{\scriptscriptstyle ON}} / {I}_{ \mathrm{\scriptscriptstyle OFF}}$ of more than eight orders can be obtained for the ultrascaled a-IGZO FeFETs while maintaining an MW of 2.8 V. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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