Search

Transparent thin‐film piezoelectric transducers are attractive for haptic displays. However, for their widespread use in consumer electronics, innovative and cost‐effective processing methods need to be developed. In this contribution the effectiveness of the deposition of lead zirconate titanate thin films by inkjet printing for the fabrication of haptic devices is demonstrated. The 1,3‐propanediol solvent is used to prepare effective inkjet‐printing inks from chemical solution deposition solutions. The printed thin‐film structures on fused silica glass substrates are 900 nm thick and strongly {100} oriented perovskite phase is detected in X‐ray diffraction patterns. To fabricate devices, interdigitated capacitors and SU‐8 insulation layers are deposited on top of the printed lead zirconate titanate. Dimensions of the final device are 15.7 × 3.4 mm2. A standing antisymmetric Lamb wave is observed at 63.3 kHz, with out‐of‐plane displacement reaching 2 µm at an applied voltage of 100 V. This value exceeds the limit at which the texture rendering function can be induced in the device. Good functional performance of the device is linked with good electromechanical properties of the printed piezoelectric, with permittivity ε ′ and piezoelectric coefficient e33,f values of 1000 and 7.7 C m−2, respectively, which are comparable to films prepared by standard spin‐coating process. [ABSTRACT FROM AUTHOR]

One-dimensional nanostructured SnO2 has attracted intense research interest due to its advantageous properties, including a large surface-to-volume ratio, high optical transparency and typical n-type properties. However, how to fabricate high-performance and multifunctional electronic devices based on 1D nanostructured SnO2 via low-cost and efficient preparation techniques is still a huge challenge. In this work, a low-cost, one-step electrospun technology was employed to synthesize the SnO2 nanofiber (NF) and nanotube (NT) arrays. The electrical and photoelectrical parameters of SnO2 NTs-based devices were effectively controlled through simple changes to the amount of Sn in the precursor solution. The optimal 0.2 SnO2 NTs-based field effect transistors (FETs) with 0.2 g SnCl2*4H2O per 5 ml in the precursor solution exhibit a high saturation current (∼9 × 10−5 A) and a large on/off ratio exceeding 2.4 × 106. Additionally, 0.2 SnO2 NTs-based FET also exhibit a narrowband deep-UV photodetectivity (240–320 nm), including an ultra-high photocurrent of 307 μA, a high photosensitivity of 2003, responsibility of 214 A W−1 and detectivity of 2.19 × 1013 Jones. Furthermore, the SnO2 NTs-based transparent photodetectors were as well be integrated with fluorine-doped tin oxide glass and demonstrated a high optical transparency and photosensitivity (∼199). All these results elucidate the significant advantages of these electrospun SnO2 NTs for next-generation multifunctional electronics and transparent photonics. [ABSTRACT FROM AUTHOR]