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Engineering the physics and chemistry of 2D materials is a key to unlock the potential of the advanced e‐nose technologies limited by the current semiconductor technologies. Herein, the adjustment of the graphene's morphology, physics, and gas sensing properties upon its carboxylation via the developed photochemical method is demonstrated. Formation of matrices of nanoscale holes yet with the retention of the lamellar structure of the graphene layer is signified upon the introduction of up to 9.5 at% of carboxyl groups. The impact of the applied carboxylation on the conduction mechanism and electronic structure is demonstrated. The appearance of a set of the localized states in the valence band is revealed, originating from the molecular orbitals of carboxyls as is signified by the proposed approach for the identification of electronic states in graphene chemical derivatives. Given holey structure, predominance of highly affine carboxyls, and lateral inhomogeneity, the enhanced detection and discrimination of various alcohols, acetone, and ammonia vapors at room temperature is demonstrated. The opposite chemiresistive response toward ammonia in the humid air is also experimentally revealed and justified by the performed density functional theory modeling on the effect of ammonia, water, and their mix on electronic structure, and resistivity of the carboxylated graphene. [ABSTRACT FROM AUTHOR]

Graphene derivatization to either engineer its physical and chemical properties or overcome the problem of the facile synthesis of nanographenes is a subject of significant attention in the nanomaterials research community. In this paper, we propose a facile and scalable method for the synthesis of thiolated graphene via a two-step liquid-phase treatment of graphene oxide (GO). Employing the core-level methods, the introduction of up to 5.1 at.% of thiols is indicated with the simultaneous rise of the C/O ratio to 16.8. The crumpling of the graphene layer upon thiolation without its perforation is pointed out by microscopic and Raman studies. The conductance of thiolated graphene is revealed to be driven by the Mott hopping mechanism with the sheet resistance values of 2.15 kΩ/sq and dependable on the environment. The preliminary results on the chemiresistive effect of these films upon exposure to ethanol vapors in the mix with dry and humid air are shown. Finally, the work function value and valence band structure of thiolated graphene are analyzed. Taken together, the developed method and findings of the morphology and physics of the thiolated graphene guide the further application of this derivative in energy storage, sensing devices, and smart materials. [ABSTRACT FROM AUTHOR]