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Your search keyword '"von Witzleben, Moritz"' showing total 2 results
Start Over Author "von Witzleben, Moritz" Topic valence fluctuations
2 results on '"von Witzleben, Moritz"'

1. Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory.

Author

Wiefels, Stefan, Von Witzleben, Moritz, Huttemann, Michael, Bottger, Ulrich, Waser, Rainer, and Menzel, Stephan

Subjects
*OXIDE electrodes, *ELECTRODES, *MEMORY, *TIME measurements, *VALENCE fluctuations, *METALLIC oxides, *ANNEALING of metals
Abstract

As one of the key aspects in the reliability of redox-based resistive switching memories (ReRAMs), maximizing their endurance is of high relevance for industrial applications. The major limitation regarding endurance is considered the excessive generation of oxygen vacancies during cycling, which eventually leads to irreversible RESET failures. Thus, the endurance could be increased by using combinations of switching oxide and ohmic electrode (OE) metal that provides a high barrier for the generation of oxygen vacancies [defect formation energy (DFE)]. In this work, we present a sophisticated programming algorithm that aims to maximize the endurance within reasonable measurement time. Using this algorithm, we compare ReRAM devices with four different OE metals and confirm the theoretically predicted trend. Thus, our work provides valuable information for device engineering toward higher endurance. [ABSTRACT FROM AUTHOR]

Published
2021
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2. Variability-Aware Modeling of Filamentary Oxide-Based Bipolar Resistive Switching Cells Using SPICE Level Compact Models.

Author

Bengel, Christopher, Siemon, Anne, Cuppers, Felix, Hoffmann-Eifert, Susanne, Hardtdegen, Alexander, von Witzleben, Moritz, Hellmich, Lena, Waser, Rainer, and Menzel, Stephan

Subjects
LOGIC circuits, COMPACTING, VALENCE fluctuations, EXPECTATION (Psychology)
Abstract

Bipolar resistive switching (BRS) cells based on the valence change mechanism show great potential to enable the design of future non-volatile memory, logic and neuromorphic circuits and architectures. To study these circuits and architectures, accurate compact models are needed, which showcase the most important physical characteristics and lead to their specific experimental behavior. If BRS cells are to be used for computation-in-memory or for neuromorphic computing, their dynamical behavior has to be modeled with special consideration of switching times in SET and RESET. For any realistic assessment, variability has to be considered additionally. This study shows that by extending an existing compact model, which by itself is able to reproduce many different experiments on device behavior critical for the anticipated device purposes, variability found in experimental measurements can be reproduced for important device characteristics such as I-V characteristics, endurance behavior and most significantly the SET and RESET kinetics. Furthermore, this enables the study of spatial and temporal variability and its impact on the circuit and system level. [ABSTRACT FROM AUTHOR]

Published
2020
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