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We theoretically and experimentally demonstrate a strong and tunable optical anisotropy in epitaxially-grown VO2 thin films. Using a combination of temperature-dependent X-ray diffraction, spectroscopic ellipsometry measurements and first-principle calculations, we reveal that these VO2 thin films present an ultra-large birefringence (Δn > 0.9). Furthermore, leveraging the insulator-to-metal transition of VO2, we demonstrate a dynamic reconfiguration of optical properties from birefringent to hyperbolic, which are two distinctive regimes of anisotropy. Such a naturally birefringent and dynamically switchable platform paves the way for multi-functional devices exploiting tunable anisotropy and hyperbolic dispersion.

Design of hardware based on biological principles of neuronal computation and plasticity in the brain is a leading approach to realizing energy-and sample-efficient AI and learning machines. An important factor in selection of the hardware building blocks is the identification of candidate materials with physical properties suitable to emulate the large dynamic ranges and varied timescales of neuronal signaling. Previous work has shown that the all-or-none spiking behavior of neurons can be mimicked by threshold switches utilizing material phase transitions. Here, we demonstrate that devices based on a prototypical metal-insulator-transition material, vanadium dioxide (VO2), can be dynamically controlled to access a continuum of intermediate resistance states. Furthermore, the timescale of their intrinsic relaxation can be configured to match a range of biologically relevant timescales from milliseconds to seconds. We exploit these device properties to emulate three aspects of neuronal analog computation: fast (~1 ms) spiking in a neuronal soma compartment, slow (~100 ms) spiking in a dendritic compartment, and ultraslow (~1 s) biochemical signaling involved in temporal credit assignment for a recently discovered biological mechanism of one-shot learning. Simulations show that an artificial neural network using properties of VO2 devices to control an agent navigating a spatial environment can learn an efficient path to a reward in up to fourfold fewer trials than standard methods. The phase relaxations described in our study may be engineered in a variety of materials and can be controlled by thermal, electrical, or optical stimuli, suggesting further opportunities to emulate biological learning in neuromorphic hardware. [ABSTRACT FROM AUTHOR]

We theoretically and experimentally demonstrate a strong and tunable optical anisotropy in epitaxially-grown VO2 thin films. Using a combination of temperature-dependent X-ray diffraction, spectroscopic ellipsometry measurements and first-principle calculations, we reveal that these VO2 thin films present an ultra-large birefringence (Δn > 0.9). Furthermore, leveraging the insulator-to-metal transition of VO2, we demonstrate a dynamic reconfiguration of optical properties from birefringent to hyperbolic, which are two distinctive regimes of anisotropy. Such a naturally birefringent and dynamically switchable platform paves the way for multi-functional devices exploiting tunable anisotropy and hyperbolic dispersion. [ABSTRACT FROM AUTHOR]

We demonstrate spatial modification of the optical properties of thin-film metal oxides, zinc oxide (ZnO) and vanadium dioxide (VO2) as representatives, using a commercial focused ion beam (FIB) system. Using a Ga+ FIB and thermal annealing, we demonstrated variable doping of a wide-bandgap semiconductor, ZnO, achieving carrier concentrations from 1018 cm−3 to 1020 cm−3. Using the same FIB without subsequent thermal annealing, we defect-engineered a correlated semiconductor, VO2, locally modifying its insulator-to-metal transition (IMT) temperature by up to ∼25 °C. Such area-selective modification of metal oxides by direct writing using a FIB provides a simple, mask-less route to the fabrication of optical structures, especially when multiple or continuous levels of doping or defect density are required. [ABSTRACT FROM AUTHOR]

We report on switching dynamics of individual and coupled vanadium dioxide (VO2) devices subject to voltage pulses as the temperature is systematically varied from room temperature spanning the insulator–metal transition (IMT) temperature. The switching voltage of single devices has a strong relationship with both temperature and voltage pulsewidth. Two-step switching in connected VO2 devices has been noted in current transient plots and was found to depend on temperature, pulsewidth, and pulse amplitude. Experimental switching behavior measured from VO2 artificial neurons was implemented into a spiking neural network (SNN). During training, modulating the switching voltage via temperature affords a novel method to implement homeostasis with the coupled devices. Simulation results show the efficacy of the stochastic neuronal characteristics and the proposed homeostasis mechanism on a standard digit recognition task. These studies contribute to ongoing efforts in neuromorphic computing exploiting collective phase transitions. [ABSTRACT FROM AUTHOR]

Optical limiters are nonlinear devices that feature decreasing transmittance with increasing incident optical intensity, and thus can protect sensitive components from high‐intensity illumination. The ideal optical limiter reflects rather than absorbs light in its active ("limiting") state, minimizing risk of damage to the limiter itself. Previous efforts to realize reflective (rather than absorbing) limiters were based on embedding nonlinear layers into relatively thick multilayer photonic structures, resulting in substantial fabrication complexity, reduced speed and, in some instances, limited working bandwidth. In this paper, these tradeoffs are overcome by using the insulator‐to‐metal transition (IMT) in vanadium dioxide (VO2) to achieve intensity‐dependent modulation of resonant transmission through aperture antennas. Due to the large change of optical properties across the IMT, low‐quality‐factor resonators are sufficient to achieve high on–off ratios in the transmittance of the limiter. As a result, our ultrathin reflective limiter (thickness ≈1/100 of the free‐space wavelength) is broadband in terms of operating wavelength (>2 µm at 10 µm) and angle of incidence (up to ≈50° away from the normal). Our analysis of the experimental results via opto‐thermal simulations provides insight into limiter performance and is a useful guidance for further engineering efforts. [ABSTRACT FROM AUTHOR]

The intriguing physics of vanadium dioxide (VO2) makes it not only a fascinating object of study for fundamental research on solid-state physics but also an attractive means to actively modify the properties of integrated devices. In particular, the exceptionally large complex refractive index variation produced by the insulator-to-metal transition of this material opens up interesting opportunities to dynamically tune optical systems. This Perspective reviews some of the exciting work done on VO2 for nanophotonics in the last decade and suggests promising directions to explore for this burgeoning field. [ABSTRACT FROM AUTHOR]

On-chip protection from electrostatic discharge (ESD) and electrical overstress (EOS) is a continuous challenge in the semiconductor industry, requiring significant design costs and die space. Insulator-metal transition (IMT) materials like vanadium dioxide (VO2) could be used as bidirectional, compact voltage snapback devices for ESD protection that are not required to be in the front-end silicon. However, the reliability and response of these materials to ESD is not yet well studied. Here, we perform transmission line pulse (TLP) tests on thin film (50– 150 nm) VO2 devices. These can repeatedly sustain high currents in their metallic state, but still return to insulating once an ESD event is over. Devices with widths from 5 to 50 $\mu \text{m}$ can carry a maximum current (${I} _{{\text {t}2}}$) from ~1 to over 10 A, equivalent to ~1 to 15 kV of ESD protection. Furthermore, the snapback voltage can be engineered by varying the device length. These results suggest that IMT materials could be promising for use in on-chip ESD/EOS protection. [ABSTRACT FROM AUTHOR]

A vertical multilayer VO2 MEMS microactuator device is reported in this work. A 150-nm-thick VO2 layer is sandwiched between the top Pt and bottom indium tin oxide (ITO) electrodes. An equivalent thermal circuit is developed with a thermal response time of 0.39 ms. With the insulator-to-metal phase transition of VO2 at ~68 °C accompanied by large electrical and lattice changes, a 35- $\mu \text{m}$ -long VO2 actuator experiences 2- $\mu \text{m}$ deflection across the phase transition driven by heating and 0.22- $\mu \text{m}$ deflection when electrothermally actuated. The COMSOL finite element analysis is performed to determine the spatial distribution of the current flow and temperature profile and to verify the experimental measurements of strain-induced bending in this multilayer vertical structure. The obtained experimental result shows a good fit with the simulation analysis, which can in future be used to develop a generic understanding of such vertical MEMS devices. [ABSTRACT FROM AUTHOR]

We present a device model for the electrically driven insulator-to-metal transition (E-IMT) that captures the essential physics in E-IMT and can be used for physical device simulations and mixed-mode simulations of circuits containing IMT elements. Aspects of the model include the temperature-dependent resistivity, Joule heating, heat transport, and the spatial and dynamic coupling of the above phenomenon. We show that the model captures the dc and transient characteristics as measured by experiments. The model points out the existence of two critical transition voltages (${V}_{c}$) under bidirectional sweep, the physical origin of this hysteresis, and correctly predicts the scaling of the critical voltage for transition ${V}_{c}$ with the device size. The models’ effectiveness as a basis for developing a mixed-mode circuit simulator is shown via comparison with experimental data for a steep-swing hybrid-field-effect transistor. [ABSTRACT FROM AUTHOR]

Vanadium dioxide (VO2) is a correlated electron material which undergoes an insulator-metal transition proximal to room temperature. The large change of optical properties across this phase transition is promising for tunable optical and optoelectronic devices especially at infrared frequencies. We demonstrate the ability to locally tune the optical properties on the micron scale through a simple design consisting of two electrodes patterned on a VO2 thin film. By current injection between the electrodes, a localized conducting path (metallic phase) can be formed within the insulating background. The width of the conducting path can be controlled by varying the applied current. Fourier transform infrared imaging shows that this current-modulated reflectance changes significantly over a distance on the order of the wavelength in the mid-infrared spectral range. [ABSTRACT FROM AUTHOR]

We present a metal-free tunable anisotropic metamaterial where the iso-frequency surface is tuned from elliptical to hyperbolic dispersion by exploiting the metal-insulator phase transition in the correlated material vanadium dioxide (VO2). Using VO2-TiO2 heterostructures, we demonstrate the transition in the effective dielectric constant parallel to the layers to undergo a sign change from positive to negative as the VO2 undergoes the phase transition. The possibility to tune the iso-frequency surface in real time using external perturbations such as temperature, voltage, or optical pulses creates new avenues for controlling light-matter interaction. [ABSTRACT FROM AUTHOR]

We demonstrate an abrupt drop in insertion loss (up to 21 dB) at a critical RF (10 GHz) power in 2-port series co-planar waveguides incorporating vanadium dioxide thin films. We rigorously determine the critical delivered power for switching by calculating the waveguide reflection coefficients from a lumped element model. Through analysis of the critical RF power, we find definitively that the drop is caused by RF triggering of the vanadium dioxide metal-insulator phase transition in the absence of DC bias. The sharp insertion loss drop may have use in broadband receiver protectors, RF switching, and tunable coupling applications. [ABSTRACT FROM PUBLISHER]

Electrically driven metal–insulator transition (MIT) in vanadium dioxide (\VO2) is of interest in emerging memory devices, neural computation, and high-speed electronics. We report on the fabrication of out-of-plane \VO2 metal–insulator–metal structures and reproducible high-speed switching measurements in these two-terminal devices. We have observed a clear correlation between the electrically driven on/off current ratio and the thermally induced resistance change during MIT. It is also found that sharp MIT could be triggered by the external voltage pulses within 2 ns at room temperature and the achieved on/ off ratio is greater than two orders of magnitude with good endurance. [ABSTRACT FROM AUTHOR]

We report on electrically induced multi-resistance states in \VO2/\HfO2/\VO2 heterostructures on silicon at room temperature. Through geometric confinement, the critical threshold voltage for the transition in each \VO2 layer can be tuned, and this leads to sharp current jumps as each layer undergoes a conductance transition. Consistent results are obtained in both voltage and current sweep conditions. The ability to realize variable resistance states in correlated oxide heterostructures fabricated on silicon could be of relevance to emerging information processing and storage schemes utilizing functional oxides. [ABSTRACT FROM PUBLISHER]

We demonstrate the characteristics of voltage-pulse-induced out-of-plane switching driven by metal–insulator transition (MIT jump) with \VO2 thin-film devices fabricated on silicon. As the peak of a triangular pulse increases, the delay time from the insulating state to the metallic state linearly decreases and is independent of change in external resistance. The intrinsic rising time is less than 170 ns. An endurance test with continuous voltage pulse shows reliability without breakdown for more than 110 h. This work contributes to correlated oxide electronics utilizing phase transition layers. [ABSTRACT FROM PUBLISHER]

The insulator‐to‐metal transition (IMT) in vanadium dioxide (VO2) can enable a variety of optics applications, including switching and modulation, optical limiting, and tuning of optical resonators. Despite the widespread interest in VO2 for optics, the wavelength‐dependent optical properties across its IMT are scattered throughout the literature, are sometimes contradictory, and are not available at all in some wavelength regions. Here, the complex refractive index of VO2 thin films across the IMT is characterized for free‐space wavelengths from 300 nm to 30 µm, using broadband spectroscopic ellipsometry, reflection spectroscopy, and the application of effective‐medium theory. VO2 films of different thicknesses are studied, on two different substrates (silicon and sapphire), and grown using different synthesis methods (sputtering and sol–gel). While there are differences in the optical properties of VO2 synthesized under different conditions, these differences are surprisingly small in the ≈2–11 µm range where the insulating phase of VO2 also has relatively low optical loss. It is anticipated that the refractive‐index datasets from this article will be broadly useful for modeling and design of VO2‐based optical and optoelectronic components, especially in the mid‐wave and long‐wave infrared. [ABSTRACT FROM AUTHOR]

Modulation is a cornerstone of optical communication, and as such, governs the overall speed of data transmission. Currently, the two main strategies for modulating light are direct modulation of the excited emitter population (for example, using semiconductor lasers) and external optical modulation (for example, using Mach-Zehnder interferometers or ring resonators). However, recent advances in nanophotonics offer an alternative approach to control spontaneous emission through modifications to the local density of optical states. Here, by leveraging the phase-change of a vanadium dioxide nanolayer, we demonstrate broadband all-optical direct modulation of 1.5 μm emission from trivalent erbium ions more than three orders of magnitude faster than their excited state lifetime. This proof-of-concept demonstration shows how integration with phase-change materials can transform widespread phosphorescent materials into high-speed optical sources that can be integrated in monolithic nanoscale devices for both free-space and on-chip communication. [ABSTRACT FROM AUTHOR]

Understanding the pathways and time scales underlying electrically driven insulator-metal transitions is crucial for uncovering the fundamental limits of device operation. Using stroboscopic electron diffraction, we perform synchronized time-resolved measurements of atomic motions and electronic transport in operating vanadium dioxide (VO2) switches. We discover an electrically triggered, isostructural state that forms transiently on microsecond time scales, which is shown by phase-field simulations to be stabilized by local heterogeneities and interfacial interactions between the equilibrium phases. This metastable phase is similar to that formed under photoexcitation within picoseconds, suggesting a universal transformation pathway. Our results establish electrical excitation as a route for uncovering nonequilibrium and metastable phases in correlated materials, opening avenues for engineering dynamical behavior in nanoelectronics. [ABSTRACT FROM AUTHOR]

Active, widely tunable optical materials have enabled rapid advances in photonics and optoelectronics, especially in the emerging field of meta-devices. Here, we demonstrate that spatially selective defect engineering on the nanometer scale can transform phase-transition materials into optical metasurfaces. Using ion irradiation through nanometer-scale masks, we selectively defect-engineered the insulator-metal transition of vanadium dioxide, a prototypical correlated phase-transition material whose optical properties change dramatically depending on its state. Using this robust technique, we demonstrated several optical metasurfaces, including tunable absorbers with artificially induced phase coexistence and tunable polarizers based on thermally triggered dichroism. Spatially selective nanoscale defect engineering represents a new paradigm for active photonic structures and devices. [ABSTRACT FROM AUTHOR]

We demonstrate an innovative multifunctional artificial material that combines exotic metamaterial properties and the environmentally responsive nature of phase-change media. The tunable metamaterial is designed with the aid of two interwoven coordinate-transformation equations and implemented with a network of thin-film resistors and vanadium dioxide (VO2). The strong temperature dependence of VO2 electrical conductivity results in a significant modification of the resistor network behavior, and we provide experimental evidence for a reconfigurable metamaterial electric circuit that not only mimics a continuous medium, but is also capable of responding to thermal stimulation through dynamic variation of its spatial anisotropy. Upon external temperature change, the overall effective functionality of the material switches between a "truncated cloak" and a "concentrator" for electric currents. Possible applications may include adaptive matching resistor networks, multifunctional electronic devices, and equivalent artificial materials in the magnetic domain. Additionally, the proposed technology could also be relevant for thermal management of integrated circuits. [ABSTRACT FROM AUTHOR]

Electrolyte gating of complex oxides enables investigation of electronic phase boundaries and collective response to strong electric fields. The origin of large conductance modulations and associated emergent properties in such field effect structures is a matter of intense study due to competing contributions from electrostatic (charge accumulation) and electrochemical (crystal chemistry changes) effects. Vanadium dioxide (VO2) is a prototypical correlated insulator that shows an insulator-to-metal transition at ~67 °C and recent studies have noted a vast range of electronic effects in electric double-layer transistors (EDLT). In this study, we demonstrate that the response of electrolyte gated VO2 devices can be deterministically controlled by inserting a monolayer of graphene at the oxide-electrolyte interface. Several electrolytes as well as dopants (such as lithium ions and protons) were employed in EDL transistors to show that graphene serves as an inert barrier that successfully protects the oxide surface from chemical reactions. This monolayer interface has a striking effect on resistance modulation in the vanadium dioxide transistor channel up to several orders of magnitude and enables retention of the insulating phase. The studies allow new insights into the response of correlated insulators in EDLTs and inform design of correlated oxide-2D heterostructures for electronics and sensors. [ABSTRACT FROM AUTHOR]