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Theadhesion of electrodeposited metal film to polymeric circuitboard substrate is one of the key elements to successful miniaturizationof electronic devices. However, as the size of the circuit patterncontinuously decreases, a novel method is urgently required to increasethe adhesion of the metal film on the substrate, especially on thesmooth surface, which is critical to decrease the minimum featuresize of the metal pattern. In this research, we developed an adhesionpromoter layer by depositing metal chelating poly(4-vinylpyridine)(P4VP) film onto various organic and inorganic substrates via initiatedchemical vapor deposition process (iCVD) to enhance the adhesion betweenthe electroless deposited copper (Cu) layer and the substrate. Thehighest peel strength obtained between the electroless deposited Culayer and P4VP coated substrate was 1.22 kgf/cm. Many advantageouscharacteristics of the adhesion promoter layer, including extremethinness, the improved adhesion strength, conformal coverage, scalabilityof the deposition process, and short process time, will prompt theapplicability of this adhesion promoter layer to industrial scaleproduction. [ABSTRACT FROM AUTHOR]

Abstract: Triangular GaN–BN core–shell nanocables were synthesized by thermal chemical vapor deposition using GaN/B2O3/NH3 reaction. They consist of single-crystalline wurtzite GaN nanowires (avg. diameter=60nm), grown along the [010] direction, and 3nm-thick crystalline h-BN outerlayers. The h-BN outerlayers lead to superhydrophobicity, and probably reduce the surface defects of GaN nanowires. Field emission from as-grown GaN–BN nanocables shows large current densities and low turn-on voltages, which are comparable to those of bare GaN nanowires. [Copyright &y& Elsevier]

Abstract: High-purity N-doped double-walled carbon nanotubes (DWNTs) were synthesized by chemical vapor deposition, and investigated by synchrotron X-ray photoelectron spectroscopy (XPS). As the photon energy increases, the N content increases up to 3at.%, indicating that the inner wall contains the higher N content than the outer wall. The graphite-like and pyridine-like N structures exist as about 1:1 ratio. The self-consistent charge-density-functional-based tight-binding calculation shows that the N-doping of the inner wall yields the more stable DWNT than that of the outer wall, which supports the XPS result. [Copyright &y& Elsevier]