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This paper presents a series of multi-stage hybrid memristor-CMOS ternary combinational logic stages that are optimized for reducing silicon area occupation. Prior demonstrations of memristive logic are typically constrained to single-stage logic due to the variety of challenges that affect device performance. Noise accumulation across subsequent stages can be amortized by integrating ternary logic gates, thus enabling higher density data transmission, where more complex computation can take place within a smaller number of stages when compared to single-bit computation. We present the design of a ternary half adder, a ternary full adder, a ternary multiplier, and a ternary magnitude comparator. These designs are simulated in SPICE using the broadly accessible Knowm memristor model, and we perform experimental validation of individual stages using an in-house fabricated Si-doped HfOx memristor which exhibits low cycle-to-cycle variation, and thus contributes to robust long-term performance. We ultimately show an improvement in data density in each logic block of between $5.2\times - 17.3\times $ , which also accounts for intermediate voltage buffering to alleviate the memristive loading problem. [ABSTRACT FROM AUTHOR]

Locally-active memristor (LAM) is one of the promising candidates of artificial neurons, indicating it has potential applications in neuromorphic computing. Quantitative theoretical analysis on LAMs can provide benefits for designing related oscillator circuits and systems. This study begins with the aim of assessing the importance of DC V-I characteristic in the performance of LAMs by using small-signal analysis method. The DC V-I curve of the LAM is specified by two parameters involving resistance (conductance) and differential resistance (differential conductance). In addition to these two static parameters, we extract a crucial dynamic parameter to describe the behavior of the LAM. Theoretical analysis demonstrates that the performance of generic current-controlled and voltage-controlled LAMs is closely associated with three crucial parameters, i.e., the above two static and one dynamic parameters. Hence, only based on these three parameters, can one derive the small-signal equivalent circuit of LAMs and determine the oscillation frequency range and condition for simple LAM-based oscillators. By applying the presented universal dynamics analysis results, we further propose a modified mathematical model with higher accuracy to mimic the quasi-static and oscillating behaviors of a real Nb2O5 device, and provide some fundamental guidance for the design of LAM-based high-frequency oscillators. [ABSTRACT FROM AUTHOR]