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In this paper, an inductorless wideband balun-low noise amplifier (LNA) using current source loads, common-mode feedback (CMFB), asymmetric capacitive cross-coupling (CCC) and auxiliary common-source amplifier are proposed to obtain low noise figure (NF) and high gain. The asymmetric CCC boosts the gain and reduces the NF. The CMFB fixes the output to a common mode voltage. RMS detectors are proposed to realize a low-cost built-in self-test (BIST) circuit for measuring the gain of the LNA during its entire lifespan. The proposed balun-LNA is implemented in 0.18 µm CMOS process technology and the performance is studied through post-layout simulations. PVT and Monte Carlo simulations are performed to check for the robustness and yield of the circuit. From these analyses, it is found that the integrated average gain of the LNA obtained with and without the RMS detectors is 19.1 dB and 20.1 dB respectively in the 3 dB-band of 0.18–2 GHz. NF of the LNA in this band is 2.87 dB. The average IIP3, IIP2, and 1 dB compression points of the LNA are (−4.89 dBm, +28.57 dBm, −20.42 dBm) respectively. The proposed LNA dissipates a power of 4.9 mW with a supply of 1.2 V and requires an area of 0.04 mm2. [ABSTRACT FROM AUTHOR]

Two Inductorless balun low noise amplifiers (LNAs- LNA1, LNA2) are proposed in this paper to reduce the noise figure (NF) and improve the linearity. They use asymmetric capacitive cross-coupling (A-CCC) and auxiliary CS amplifier to reduce the NF. Robust derivative superposition is used in LNA2 to improve the 3rd order input intercept point, and hence the linearity. The proposed A-CCC balun-LNAs are implemented in 0.18 µm CMOS technology, and their performances are evaluated through post-layout simulations, PVT variation analysis and Monte Carlo simulations. From these studies, the average NF, gain and the 3dB-bandwidths of LNA1 and LNA2 obtained are (2.49 dB, 20 dB, 0.1–2.48 GHz) and (2.61 dB, 19.8 dB, 0.1–2.0 GHz) respectively. For a 1.2 V supply and an area of 0.02mm2, the power consumption of LNA1 and LNA2 are 4.9 mW and 5.8 mW, respectively. The performances of the proposed LNAs are also compared with other wideband LNAs reported in the literature. [ABSTRACT FROM AUTHOR]

A CG-CS wideband balun-LNA using asymmetric capacitive cross-coupling (A-CCC) and an auxiliary current reuse amplifier (ACRA) is reported in the literature. It achieves low noise figure (NF) and high gain at the cost of linearity. To improve the linearity, inductive loads are proposed. However, this is at the cost of increase in chip area. To overcome this problem, a balun-LNA using modified complementary derivative superposition and asymmetric CCC-DS techniques for the ACRA and A-CCC block respectively is proposed in this paper. It dispenses with the inductive loads. The balun-LNAs with and without the proposed linearization are implemented in UMC 180 nm CMOS technology with a supply of 1.2 V and are studied through post-layout simulations. It is found that the proposed LNA has +7.96 dBm increase in average IIP3 compared to the LNA without the proposed linearization. It achieves an average IIP3 of +5.49 dBm with a peak gain of 24.2 dB and minimum NF of 2.18 dB over the bandwidth of 1–3 GHz. The proposed LNA requires an area of 0.3 mm2 and a power of 6.95 mW. [ABSTRACT FROM AUTHOR]

This paper proposes a low noise amplifier (LNA) which can be reconfigured to operate in two frequency bands at low power. The LNA employs self-cascode devices in current-reuse configuration to enable lower supply voltage operation without compromising the gain. A quasi-differential structure is used to achieve high linearity and good common-mode rejection. The proposed LNA is designed to operate in (3.1–4.7 GHz: Band1) and (5.0–7.2 GHz: Band2) in the 5G frequency spectrum. It is implemented in 65 nm UMC-LL CMOS process technology using 0.6V, and its performance is evaluated using post layout, PVT and Monte Carlo simulations. The proposed LNA requires an area of 0.03276 mm2. The power dissipation, maximum gain, minimum noise figure, average IIP3, IIP2 of the LNA operating in Band1 and Band2 are found to be (0.97 ​mW, 17.6 ​dB, 2.20 ​dB, +0.72dBm, +46.49dBm) and (0.485 ​mW, 12.1 ​dB, 3.31 ​dB, +0.12dBm, +42.60dBm) respectively. [ABSTRACT FROM AUTHOR]