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Oxide-metal-oxide (OMO) multilayer film has attracted increasing interest due to its high performance, including the high optical transparency and low electric resistivity, and has been considered a promising substitute for the conventional indium tin oxide (ITO) film. In this work, we studied the role of growth parameters for the performance of sputtered ITO/Ag/ITO multilayer film. ITO/Ag/ITO film with superior properties of transmittance of 89.1% and sheet resistance of 8 Ω/□ was prepared. The effects of deviation of film thickness on the optical and properties were investigated systematically. Ultrathin ITO1−x film with thickness of less than 5 nm covers the active Ag surface to avoid Ag oxidation effectively, resulting in both high transmittance and conductivity. The X-ray photoelectron spectroscopy depth profile analysis indicates the role of ultrathin ITO1−x film on Ag surface oxidation. This work provides a guideline to fabricate high-quality OMO-based films and devices. [ABSTRACT FROM AUTHOR]

ZnO:Al films were prepared by magnetron sputtering at room temperature. During the growth process, H radicals produced by radio frequency power sources were in situ introduced into ZnO:Al films. By injecting H radicals, the content of Al in ZnO:Al films increased from 3.4 at. % to 6.1 at. %, which could be ascribed to the reaction between H radicals and ZnO as well as the resputtering of the Zn element. Surface morphologies of ZnO:Al films were tuned from smooth shape to sunflower seed-like. Furthermore, ZnO:Al films without injecting H radicals showed highly c-axis preferential orientation and then nearly became amorphous with the addition of H radicals, which corresponds to the results of Raman spectra. The grain boundary potentials decreased due to the removal of oxygen at grain boundaries and an amount of Vo was produced, which was proved by Raman and x-ray photoelectron spectroscopy results. The optimal resistivity of as-grown ZnO:Al films co-doped with H radicals was 1.5 × 10−3 Ω cm at an H2 ratio of 2.3%. The variation of the carrier concentration for annealed ZnO:Al films at different H2 ratios supported the existence of H interstitials and Vo. The optical bandgap varied from 3.44 eV to 3.71 eV with increasing H radicals. [ABSTRACT FROM AUTHOR]

Zinc-doped indium oxide (IZO) film, as an important transparent conductive oxide, has attracted increasing attention in various scientific and engineering areas. In the present work, discharge-voltage and reactive-oxygen controlled IZO films were grown by magnetron sputtering and studied systematically. The microstructure, element distribution and chemical bonding of IZO films were investigated by X-Ray diffraction (XRD), transmission electron microscope (TEM), Energy Dispersive X-Ray Spectroscopy (EDX) and X-ray photoelectron spectroscopy (XPS). The optical and electrical properties of IZO films were studied by controlled oxygen and discharge voltage. The typical microstructure of IZO films with optimal optical and electric properties has been characterized. High discharge voltage and matched oxygen vacancies could promote the low resistivity of IZO films, which could be determined by the electronic concentration and mobility. • IZO films were grown at room temperature by two strategies of oxygen and discharge voltage. •Oxygen supply promotes the decreases of oxygen vacancies and Zn content. •More oxygen promotes IZO film with higher transparency and larger bandgap. •Both high discharge voltage and matched oxygen content bring IZO film the superior carrier concentration and mobility. [ABSTRACT FROM AUTHOR]