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Long‐lasting radioluminescence scintillators have recently attracted substantial attention from both research and industrial communities, primarily due to their distinctive capabilities of converting and storing X‐ray energy. However, determination of energy‐conversion kinetics in these nanocrystals remains unexplored. Here we present a strategy to probe and unveil energy‐funneling kinetics in NaLuF4:Mn2+/Gd3+ nanocrystal sublattices through Gd3+‐driven microenvironment engineering and Mn2+‐mediated radioluminescence profiling. Our photophysical studies reveal effective control of energy‐funneling kinetics and demonstrate the tunability of electron trap depth ranging from 0.66 to 0.96 eV, with the corresponding trap density varying between 2.38×105 and 1.34×107 cm−3. This enables controlled release of captured electrons over durations spanning from seconds to 30 days. It allows tailorable emission wavelength within the range of 520–580 nm and fine‐tuning of thermally‐stimulated temperature between 313–403 K. We further utilize these scintillators to fabricate high‐density, large‐area scintillation screens that exhibit a 6‐fold improvement in X‐ray sensitivity, 22 lp/mm high‐resolution X‐ray imaging, and a 30‐day‐long optical memory. This enables high‐contrast imaging of injured mice through fast thermally‐stimulated radioluminescence readout. These findings offer new insights into the correlation of radioluminescence dynamics with energy‐funneling kinetics, thereby contributing to the advancement of high‐energy nanophotonic applications. [ABSTRACT FROM AUTHOR]

There are few reports about purely organic phosphorescence scintillators, and the relationship between molecular structures and radioluminescence in organic scintillators is still unclear. Here, we presented isomerism strategy to study the effect of molecular structures on radioluminescence. The isomers can achieve phosphorescence efficiency of up to 22.8 % by ultraviolet irradiation. Under X‐ray irradiation, both m‐BA and p‐BA show excellent radioluminescence, while o‐BA has almost no radioluminescence. Through experimental and theoretical investigation, we found that radioluminescence was not only affected by non‐radiation in emissive process, but also highly depended on the material conductivity caused by the different molecular packing. This study not only allows us to clearly understand the relationship between the molecular structures and radioluminescence, but also provides a guidance to rationally design new organic scintillators. [ABSTRACT FROM AUTHOR]

AlN layer was grown as interlayer between undoped GaN and Mg doped Al0.14Ga0.86N/GaN superlattices (SLs) epilayer to modulate the strain distribution between Al0.14Ga0.86N barrier and GaN well layers in SLs sample. Strain relaxation was observed in the SLs sample with AlN interlayer by x-ray diffraction reciprocal space mapping method. The measured hole concentration of SLs sample with AlN interlayer at room temperature was over 1.6×1018 cm-3 but that was only 6.6×1016 cm-3 obtained in SLs sample without AlN interlayer. Variable temperature Hall-effect measurement showed that the acceptor activation energy decreased from 150 to 70 meV after inserting the AlN layer, which indicated that the strain modulation of SLs induced by AlN interlayer was beneficial to the Mg acceptor activation and hole concentration enhancement. [ABSTRACT FROM AUTHOR]

Abstract: About 1.2mm thick GaN bulk crystals were obtained by combining a pulsed NH3-flow modulation (PFM) method and a self-separation method of short-shutting NH3 flow when using hydride vapor phase epitaxy (HVPE). High crystal quality of bulk GaN was evaluated by X-ray rocking curves (XRC) and the full width at half maximum (FWHM) values were 110, 72 and 83arcsec for (002), (102) and (100) reflection planes, respectively. The PFM method is proved to be effective in reducing cracks and keeping the surface smooth. And the method of short-shutting NH3 flow can lead to GaN thick layer separate from sapphire substrate when cooling from the high growth temperature. Growth and separation mechanisms were investigated. Two states were found in PFM method. With PFM method modulating between high quality state and low stress state, 300μm thick GaN layers without cracks were obtained. Study of spontaneous separation mechanism revealed that the separation attributed to formation of voids inside the GaN layer. [Copyright &y& Elsevier]