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Aerosol assisted chemical vapour deposition (AACVD) has been used to deposit thin films of ZnO from the single-source precursor [Zn(OC(Me)CHC(Me)N( i Pr)) 2 ] ( 1 ) affording highly transparent (>80%) and conductive films (sheet resistance ∼70 KΩ/sq). Extension of this AACVD method whereby related precursors of the type, [R 2 M(OC(Me)CHC(Me)N( i Pr))] (R = Et, M = Al ( 2 ); R = Me, M = Ga ( 3 )), isolated as oils, were added to the precursor solution allowed for the deposition of aluminium- and gallium-doped ZnO (AZO and GZO) films, respectively. Complexes 1 – 3 were characterised by elemental analysis, NMR and mass spectrometry. Films were deposited in under 30 min at 400 °C, from CH 2 Cl 2 /toluene solutions with a N 2 carrier gas. Herein we report the bulk resistivity, ρ , of AZO (0.252 Ω cm) and GZO (0.756 Ω cm) films deposited from this novel approach. All the films transparency exceeded 80% in the visible, X-ray diffraction (XRD) showed all films to crystallise in the wurtzite phase whilst X-ray photoemission spectroscopy (XPS) confirmed the presence of the Al and Ga dopants in the films, and highlighted the low C-contamination (<5%) this route offers. Investigation of a mechanism analogous to the Kirkendall effect confirmed that heating of GZO films at 1000 °C produced the spinel structure GaZn 2 O 4 . [ABSTRACT FROM AUTHOR]

The use of zinc triflate (trifluoromethanesulfonate), [Zn(OTf) 2 ] as a precursor in the aerosol assisted chemical vapour deposition of zinc oxide thin films is described. Aluminum doped zinc oxide (AZO) thin films are also shown to be deposited when aluminum acetylacetonate [Al(acac) 3 ] was introduced into the precursor solution, illustrating the versatility of this system. Film characterization techniques include glancing angle X-ray powder diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy and optical and electrical measurements. AZO films with an Al content of 7 at.% were found to have favourable transparent conducting oxide properties with simultaneous high transparency (> 80%) in the visible light region and a low electrical resistivity (1.96 × 10 − 3 Ω cm). [ABSTRACT FROM AUTHOR]

Single-source zinc β-iminoesterate precursors have been used for the first time in the aerosol-assisted chemical-vapour deposition (AACVD) of ZnO thin films. Depositions at 450 °C on silica-coated glass substrates produced strongly adherent films with excellent coverage of the substrate. The zinc β-iminoesterates [Zn(L1)2] ( 1) and [Zn(L2)2] ( 2) were synthesised by the reaction between ZnEt2 and 2 equiv. of a synthesised β-iminoester ligand CH3C[NHCH(CH3)2]CHC(O)OCH2CH3 (L1) and CH3C(NHCH3)CHC(O)OCH2CH3 (L2). The synthesised complexes were isolated and characterised by 1H and 13C NMR spectroscopy, mass spectrometry and thermal gravitational analysis (TGA). The structures of the compounds were determined by single-crystal X-ray diffraction. The ZnO films deposited from 1 and 2 were analyzed by glancing-angle X-ray powder diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and their optical properties determined by UV/Vis/NIR transmission spectroscopy. These results reveal that the organic ligand attached to the N moiety of the zinc complex has a significant effect on the level of carbon incorporated into the deposited thin film. Upon annealing, highly transparent hexagonal wurtzite ZnO thin films were produced. [ABSTRACT FROM AUTHOR]

A set of heteroleptic ethyl zinc β-amidoenoates (1, 2) and β-ketoiminates (3) of the form [LZnEt]2 with varying steric bulk have been synthesised via the reaction of diethylzinc with β-aminoenoate ligands HL1 and HL2 and β-ketoimine HL3. These complexes have been characterised via 1H and 13C NMR, mass spectrometry and single-crystal X-ray diffraction, which unambiguously determined all three structures as dimeric species in the solid state. We observe the unusual dimerisation of 1 and 2 through coordination of the central zinc atom to the methine carbon of the second monomer, which gives these complexes high reactivity. The thermal properties of complex 3 are explored via thermal gravimetric analysis (TGA), to investigate their potential as single-source precursors to zinc oxide, which shows that 3 has a significantly lower decomposition temperature as compared to its bis-ligated counterpart [Zn(L3)2], which gives 3 promise as a single-source precursor to zinc oxide. [ABSTRACT FROM AUTHOR]