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We discussed the morphological, structural, optical and electrical properties of unirradiated and swift heavy ions (SHI) irradiated ZnO films.X-ray diffraction revealed the hexagonal wurtzite structure corresponding to c-axis (002) of all films. The roughnesses and grain sizes of the irradiated ZnO film increases with increasing SHI fluencies. Both unirradiated and irradiated films show more than 90 % transmission in the UV-visible region. Finally, we show that SHI reduced the resistance of the ZnO films to a large extent. [ABSTRACT FROM AUTHOR]

We report the room temperature ferromagnetism in 2% Ag-doped ZnO films grown by RF magnetron sputtering. X-ray diffraction of undoped and 2% Ag-doped ZnO show the hexagonal wurtzite structure corresponding to c-axis (002) orientation. The presence of defects within Ag-doped ZnO films can be revealed by electron paramagnetic resonance. It has been observed that saturated magnetic moment increase as we increase the zinc vacancies during deposition. [ABSTRACT FROM AUTHOR]

We report the room temperature ferromagnetism in 2% Cu doped ZnO films grown by RF magnetron sputtering in different argon and oxygen partial pressure. X-ray photoelectron spectroscopy was used to ascertain the oxidation states of Cu in ZnO. The presence of defects within Cu-doped ZnO films can be revealed by electron paramagnetic resonance. It has been observed that saturated magnetic moment increase as we increase the zinc vacancies during deposition. [ABSTRACT FROM AUTHOR]

Temperature dependence current density-voltage characteristic of AZO/ZnO/ZnPc/Au inorganic/organic hybrid p-n junction diode have been used to investigate the non ideal behavior of AZO/ZnO/ZnPc/Au hybrid p-n junction diode. The diode shows high ideality factor of 3.0 at 300 K which increases with decreasing temperature and cannot be explained by the standard Shockley theory of the p-n junction diode. [ABSTRACT FROM AUTHOR]

We have fabricated zinc oxide and metal phthalocyanine based hybrid p-n junction diodes using aluminum doped zinc oxide film as transparent conducting electrode. The current rectifying behavior of these hybrid diodes is similar to those of inorganic p-n junction diodes. The current-voltage measurement gives a rectification ratio of the order of 104 and a current density of 0.6mA/cm2. The formation of depletion region at the inorganic-organic interface has been established by the capacitance-voltage measurements. [ABSTRACT FROM AUTHOR]

We report on the fabrication of FePc/ZnO hybrid p-n junction device using Aluminum doped zinc oxide (AZO) as the transparent conducting electrode. The structure of such devices consist of ZnO and an organic molecular semiconductors, in which ZnO and Organic thin films served as n and p-type component respectively. We have obtained a rectification factor greater than ∼102 and current density of 0.3mA/cm2 at 2V.The capacitance-voltage characterization of the device further validates the formation of a one sided abrupt p-n junction at the ZnO/FePc interface. [ABSTRACT FROM AUTHOR]