1. Magnetic resonance investigation of Zn1-xFexO properties influenced by annealing atmosphere.
- Author
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Raita, O., Popa, A., Toloman, D., Stan, M., and Giurgiu, L. M.
- Subjects
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MAGNETIC resonance , *ZINC oxide spectra , *ANNEALING of metals , *SPINTRONICS , *ELECTRON paramagnetic resonance , *SEMICONDUCTOR research - Abstract
ZnO is an attractive system for a wide variety of practical applications, being a chemically stable oxide semiconductor. It has been shown that Fe doping produces ferromagnetic semiconductor at room temperature. This material, therefore, has the potential for use in spintronic devices such as spin transistors, spin light emitting diodes, very high density nonvolatile semiconductor memory and optical emitters. It is believed that oxygen vacancies and substitutional incorporation are important to produce ferromagnetism in semiconductor oxide doped with transition metal ions. The present paper reports detailed electron paramagnetic resonance investigations (EPR) of the samples in order to investigate how annealing atmosphere (Air and Argon) influenced the magnetic behavior of the samples. X-band electron paramagnetic resonance (EPR) studies of Fe3+ ions in Zn1-xFexO powders with x = 1%, 3% is reported. These samples are interesting to investigate as Fe doping produce ferromagnetism in ZnO, making a promising ferromagnetic semiconductor at room temperature. [ABSTRACT FROM AUTHOR]
- Published
- 2013
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