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Solution-based bottom-gate zinc oxide thin film transistors (TFTs) were fabricated, remaining functional and demonstrating stability under extreme gamma irradiation conditions. Unpassivated TFTs were fabricated on samples with different number of ZnO layers grown via sol-gel spin coating technique. The devices were characterized before and after exposure to a cumulative dose of 220 MRad (air) of gamma irradiation. Atomic force microscopy (AFM), x-ray diffraction (XRD), and photoluminescence (PL) were employed to characterize the TFT active layers. Thickness measurements and optical images suggest the removal of the channel surface, conceivably due to cumulative effect of displacement damage near the ZnO surface. Device electrical characteristics were extracted from current–voltage measurements. The impact of displacement damage on the degradation/enhancement of device characteristics as a consequence of surface/bulk effects is discussed. [ABSTRACT FROM AUTHOR]

The effect of chelating agents of ZnO precursor solutions on crystallization behavior was investigated. Two different additives, monoethanolamine (MEA) and diethanolamine (DEA), and crystalline Pt (111)/Si and amorphous SiN x /Si substrates, were used for this study. ZnO film grown on SiN x /Si from a DEA-chelated precursor solution shows a poorly oriented microstructure with weak crystallization peaks, while ZnO film grown on Pt(111)/Si shows a c-axis preferred orientation. In the case of ZnO films prepared with a MEA-chelated precursor solution, all films show a strong preferred orientation irrespective of substrate type. This result clearly demonstrates the role of the chelating agent on the crystallographic orientation and crystallization behavior of sol-gel processed ZnO films. [ABSTRACT FROM AUTHOR]

Abstract: ZnO thin films and nanorods were grown via a wet chemical route on various wearable fabrics such as cotton, nylon, and polyester. The seed layer of ZnO was deposited by a dip-pad-cure method, and thermolysis assisted chemical solution method was used to grow well-aligned ZnO nanorods. The growth behaviors were investigated by comparing ZnO nanorods with/without a seed layer and on different fabrics. The seed layer significantly influenced the growth of ZnO nanorods while the types of fabrics did not. Nanostructured ZnO on fabrics showed reduced diffused reflectance near 380nm by absorbing UV light. Increased electrical conductivity was also observed due to the ZnO nanorods. [Copyright &y& Elsevier]