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Constructing a mixed-dimensional (MD) graphene-based van der Waals heterostructure (vdWH) is a viable technique for opening the bandgap and introducing spin polarization in graphene. In this work, we discovered that the adjacent MnF4 can manipulate the carrier doping, bandgap opening, and spin polarization of graphene in the MD vdWH of graphene/MnF4 comprised of two-dimensional (2D) graphene and one-dimensional atomic wire (1D AW) MnF4. By adopting first-principles calculations, we found that graphene can achieve effective p-type doping with the carrier density up to ∼8.89 × 1013–1.03 × 1014 cm−2. With a twisted angle of θ = 10.89° and the compressed distance of dMn-Gra = 2.84 Å, the opened bandgap of graphene (Eg-Gra) achieves 35 and 57 meV for spin-up and spin-down channels due to the sublattice symmetry-breaking in graphene, and the spin splitting energy (ΔES) at the Dirac point reaches 78.7 meV as a result of the graphene–MnF4 interlayer interaction. Remarkably, Eg-Gra is increased to 64 and 79 meV for spin-up and spin-down channels, and ΔES with 202.7 meV is obtained at dMn-Gra = 2.84 Å when the width of 1D MnF4 is doubled. Meanwhile, the n-type Ohmic contact is also realized. Our work underscores the rich interplay in the graphene/MnF4 MD vdWH and provides a significant route with fundamental insights to engineer the spintronic band properties of graphene. [ABSTRACT FROM AUTHOR]

Constructing a mixed-dimensional (MD) graphene-based van der Waals heterostructure (vdWH) is a viable technique for opening the bandgap and introducing spin polarization in graphene. In this work, we discovered that the adjacent MnF4 can manipulate the carrier doping, bandgap opening, and spin polarization of graphene in the MD vdWH of graphene/MnF4 comprised of two-dimensional (2D) graphene and one-dimensional atomic wire (1D AW) MnF4. By adopting first-principles calculations, we found that graphene can achieve effective p-type doping with the carrier density up to ∼8.89 × 1013–1.03 × 1014 cm−2. With a twisted angle of θ = 10.89° and the compressed distance of dMn-Gra = 2.84 Å, the opened bandgap of graphene (Eg-Gra) achieves 35 and 57 meV for spin-up and spin-down channels due to the sublattice symmetry-breaking in graphene, and the spin splitting energy (ΔES) at the Dirac point reaches 78.7 meV as a result of the graphene–MnF4 interlayer interaction. Remarkably, Eg-Gra is increased to 64 and 79 meV for spin-up and spin-down channels, and ΔES with 202.7 meV is obtained at dMn-Gra = 2.84 Å when the width of 1D MnF4 is doubled. Meanwhile, the n-type Ohmic contact is also realized. Our work underscores the rich interplay in the graphene/MnF4 MD vdWH and provides a significant route with fundamental insights to engineer the spintronic band properties of graphene. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) materials have attracted more and more attention due to their excellent properties. In this work, we systematically explore the heat transport properties of Graphene-C3B (GRA-C3B) superlattices and van der Waals (vdW) heterostructures using molecular dynamics method. The effects of interface types and heat flow directions on the in-plane interfacial thermal resistance (ITRip) are analyzed. Obvious thermal rectification is detected in the more energy stable interface, GRA zigzag-C3B zigzag (ZZ) interface, which also has the minimum value of ITRip. The dependence of the superlattices thermal conductivity (k) of the ZZ interface on the period length (l p ) is investigated. The results show that when the l p is 3.5 nm, the k reaches a minimum value of 35.52 W m−1 K−1, indicating a transition stage from coherent phonon transport to incoherent phonon transport. Afterwards, the effects of system size, temperature, coupling strength and vacancy defect on the out-of-plane interfacial thermal resistance (ITRop) are evaluated. With the increase of temperature, coupling strength and vacancy defect, ITRop are found to reduce effectively due to the enhanced Umklapp phonon scattering and increased probability of energy transfer. Phonon density of states and phonon participation ratio is evaluated to reveal phonon behavior during heat transport. This work is expected to provide essential guidance for the thermal management of nanoelectronics based on 2D monolayer GRA and C3B. [ABSTRACT FROM AUTHOR]

We investigated the photoelectric properties of Graphene (Gra)/ZnO, Gra/Silicene (Si) and ZnO/Gra/Si heterostructures by using density functional calculations. The results show that ZnO, Gra and Si retain their respective electronic properties, which results from the van der Waals (vdW) interlayer interaction between the heterogeneous interfaces. We also can find that the band gap of ZnO: ZnO (1.67 eV) < Gra/ZnO (1.74 eV) < ZnO/Gra/Si (1.76 eV). ZnO/Gra/Si with sandwich structure has the best photoelectric performance. [ABSTRACT FROM AUTHOR]